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11. 发明授权

US08367523B2 Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件的制造方法
公开(公告)号：US08367523B2
公开(公告)日：2013-02-05
申请号：US12726452
申请日：2010-03-18
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
IPC分类号： H01L21/46 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.
摘要翻译：本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对形成第二互连层的支撑基板的表面，并且在照射接合芯片和临时基板之间的界面照射之后，将多个粘合芯片从临时基板共同转印到支撑基板，并将芯片和临时基板彼此分离。

12. 发明授权

US08350285B2 Semiconductor light-emitting device and method for manufacturing same 有权
公开(公告)号：US08350285B2
公开(公告)日：2013-01-08
申请号：US12710829
申请日：2010-02-23
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Susumu Obata
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Susumu Obata
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L25/048 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/52 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

13. 发明授权

US08288843B2 Semiconductor light-emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08288843B2
公开(公告)日：2012-10-16
申请号：US12728846
申请日：2010-03-22
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L23/544
CPC分类号： H01L33/507 , H01L24/10 , H01L24/94 , H01L24/95 , H01L24/96 , H01L24/97 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2224/16 , H01L2924/12041 , H01L2924/12042 , H01L2933/0041 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.
摘要翻译：一种半导体发光器件，包括：具有第一主表面的第一半导体层，与第一主表面相对的第二主表面和侧表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第二半导体层的与第一半导体层相反一侧的表面上的电极; 绝缘层，其具有形成在所述第一半导体层的所述第二主表面侧上的第一表面和与所述第一表面相反的第二表面; 外部端子，其是设置在绝缘层的第二表面侧上的导体; 以及设置在所述第一半导体层的所述第一主表面上和所述绝缘层的所述第一表面的一部分上的磷光体层，所述部分与所述第一半导体层的侧表面相邻。

14. 发明授权

US08252193B2 Plasma processing apparatus of substrate and plasma processing method thereof 有权
标题翻译：基板等离子体处理装置及其等离子体处理方法
公开(公告)号：US08252193B2
公开(公告)日：2012-08-28
申请号：US12052522
申请日：2008-03-20
申请人： Akio Ui , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
发明人： Akio Ui , Takashi Ichikawa , Naoki Tamaoki , Hisataka Hayashi , Akihiro Kojima
IPC分类号： G01R31/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32137 , H01J37/32165
摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.
摘要翻译：基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

15. 发明授权

US08174027B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08174027B2
公开(公告)日：2012-05-08
申请号：US12575778
申请日：2009-10-08
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L23/04
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译：一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。

16. 发明申请

US20120097972A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120097972A1
公开(公告)日：2012-04-26
申请号：US13310384
申请日：2011-12-02
申请人： Yoshiaki SUGIZAKI , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
发明人： Yoshiaki SUGIZAKI , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
IPC分类号： H01L33/50 , H01L33/30
CPC分类号： H01L33/62 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L25/0753 , H01L33/0079 , H01L33/34 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/06132 , H01L2224/06152 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.
摘要翻译：一种制造发光器件的方法包括：形成包括发光层的多层体，使得其第一表面与透光性基板的第一表面侧相邻。在与p层电极和n侧电极之间形成有第一和第二开口的与多层体的第一表面相对的第二表面侧上的电介质膜形成。电介质膜上的种子金属和第一和第二开口的暴露表面形成将种子金属分离成p侧金属和n侧籽晶的p侧金属互连层和n侧金属互连层金属，通过去除一部分种子金属。在除去种子金属的空间中形成树脂。

17. 发明申请

US20110291149A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20110291149A1
公开(公告)日：2011-12-01
申请号：US12885721
申请日：2010-09-20
申请人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
发明人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
IPC分类号： H01L33/48
CPC分类号： H01L33/647 , H01L27/153 , H01L33/62 , H01L2224/16 , H01L2933/0066
摘要： According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.
摘要翻译：根据一个实施例，发光器件包括发光芯片，由金属材料制成的外部端子和电路板。发光芯片通过外部端子安装在电路板上。发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

18. 发明申请

US20110220910A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110220910A1
公开(公告)日：2011-09-15
申请号：US12793943
申请日：2010-06-04
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/30 , H01L33/36 , H01L33/44 , H01L21/78 , H01L33/48
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，阻挡金属层，第一金属柱，第二金属柱，和树脂。半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。第一电极设置在半导体层的第二主表面上。第二电极设置在半导体层的第二主表面上并且包括银层。绝缘膜设置在半导体层的第二主表面侧。阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。

19. 发明申请

US20110114978A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110114978A1
公开(公告)日：2011-05-19
申请号：US12728846
申请日：2010-03-22
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/40 , H01L31/0256
CPC分类号： H01L33/507 , H01L24/10 , H01L24/94 , H01L24/95 , H01L24/96 , H01L24/97 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2224/16 , H01L2924/12041 , H01L2924/12042 , H01L2933/0041 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.
摘要翻译：一种半导体发光器件，包括：具有第一主表面的第一半导体层，与第一主表面相对的第二主表面和侧表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第二半导体层的与第一半导体层相反一侧的表面上的电极; 绝缘层，其具有形成在所述第一半导体层的所述第二主表面侧上的第一表面和与所述第一表面相反的第二表面; 外部端子，其是设置在绝缘层的第二表面侧上的导体; 以及设置在所述第一半导体层的所述第一主表面上和所述绝缘层的所述第一表面的一部分上的磷光体层，所述部分与所述第一半导体层的侧表面相邻。

20. 发明授权

US07887717B2 Liquid-crystalline medium and liquid-crystal display having high twist 有权
标题翻译：具有高扭曲的液晶介质和液晶显示器
公开(公告)号：US07887717B2
公开(公告)日：2011-02-15
申请号：US12397439
申请日：2009-03-04
申请人： Akihiro Kojima , Makoto Murakami , Fumio Shimano , Jeong-Hee Sung
发明人： Akihiro Kojima , Makoto Murakami , Fumio Shimano , Jeong-Hee Sung
IPC分类号： C09K19/00 , C09K19/06 , C09K19/52 , G02F1/03 , G02F1/1333
CPC分类号： C09K19/586 , C09K19/18 , C09K19/2007 , C09K19/3003 , C09K19/3068 , C09K19/42 , C09K19/588 , C09K2019/0407 , Y10T428/10
摘要： The present invention relates to a liquid-crystalline medium having high twist, to the use thereof for electro-optical purposes, and to displays containing this medium.
摘要翻译：本发明涉及一种具有高扭曲，其电光目的用途的液晶介质，以及含有该介质的显示器。

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