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11. 发明申请

US20120118222A1 METHOD OF MANUFACTURING GaN-BASED FILM 审中-公开
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120118222A1
公开(公告)日：2012-05-17
申请号：US13283820
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，所述复合基板包括支撑基板，其主表面的热膨胀系数大于1.0倍且小于其主表面的1.2倍 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

12. 发明授权

US08658527B2 Method of manufacturing GaN-based film 有权
公开(公告)号：US08658527B2
公开(公告)日：2014-02-25
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/28 , H01L21/3205
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.

13. 发明授权

US08697564B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697564B2
公开(公告)日：2014-04-15
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

14. 发明授权

US07995267B2 Wavelength converter manufacturing method and wavelength converter 有权
标题翻译：波长转换器制造方法和波长转换器
公开(公告)号：US07995267B2
公开(公告)日：2011-08-09
申请号：US12510267
申请日：2009-07-28
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： G02F1/35
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).
摘要翻译：提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。制造波长转换器（10a）的方法具有以下步骤。起初，晶体生长。然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构），域反转结构满足入射光束（101）的准相位匹配条件。

15. 发明申请

US20110104438A1 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开
标题翻译： Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学元件的方法
公开(公告)号：US20110104438A1
公开(公告)日：2011-05-05
申请号：US13001749
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： C30B29/38 , C30B23/02 , C30B23/06 , B32B3/00 , B32B5/00 , C09K3/00
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B13/143 , Y10T428/24355 , Y10T428/2973
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造Al x Ga（1-x）N（0

16. 发明授权

US08363326B2 AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens 失效
标题翻译： Al x Ga（1-x）N单晶，Al x Ga（1-x）N单晶的制造方法，光学透镜
公开(公告)号：US08363326B2
公开(公告)日：2013-01-29
申请号：US13001723
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造本发明的Al x Ga（1-x）N（0

17. 发明申请

US20110171462A1 Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal 失效
标题翻译：氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体
公开(公告)号：US20110171462A1
公开(公告)日：2011-07-14
申请号：US13060276
申请日：2010-01-20
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C01B21/072 , C23C16/448 , C23C16/34 , C30B23/00 , B32B5/00
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用。氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。坩埚（101）内部设置有源材料（17）。加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112））沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

18. 发明授权

US08613802B2 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal 失效
标题翻译：氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体
公开(公告)号：US08613802B2
公开(公告)日：2013-12-24
申请号：US13060276
申请日：2010-01-20
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用。氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。坩埚（101）内部设置有源材料（17）。加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112））沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

19. 发明授权

US08367577B2 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride 有权
标题翻译：氮化铝薄膜及其生产氮化铝薄膜的工艺
公开(公告)号：US08367577B2
公开(公告)日：2013-02-05
申请号：US12602104
申请日：2009-02-18
申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C04B35/581
CPC分类号： C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
摘要： Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要翻译：扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。在基材（1）上，AlN薄膜（2）可利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体，％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。

20. 发明申请

US20100209622A1 Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride 有权
标题翻译：氮化铝薄膜和生产氮化铝薄膜的方法
公开(公告)号：US20100209622A1
公开(公告)日：2010-08-19
申请号：US12602104
申请日：2009-02-18
申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C23C16/34 , H05H1/24 , C09D1/00
CPC分类号： C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
摘要： Flat, thin AlN membranes and methods of their manufacture are made available.An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber an sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要翻译：扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。在基材（1）上，AlN薄膜（2）可以利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体，％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。

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