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11. 发明申请

US20090194837A1 SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT, AND OPTICAL COMMUNICATION SYSTEM 有权
标题翻译：半导体光接收元件和制造半导体光接收元件的方法和光通信系统
公开(公告)号：US20090194837A1
公开(公告)日：2009-08-06
申请号：US12362066
申请日：2009-01-29
申请人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
发明人： Yoshinori Yamauchi , Takahiro Arakida , Rintaro Koda , Norihiko Yamaguchi , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/1055 , G02B6/42 , G02B6/4206 , G02B6/4246
摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.
摘要翻译：本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

12. 发明授权

US08290009B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08290009B2
公开(公告)日：2012-10-16
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/00
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

13. 发明申请

US20110064109A1 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US20110064109A1
公开(公告)日：2011-03-17
申请号：US12805876
申请日：2010-08-23
申请人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
发明人： Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
IPC分类号： H01S5/323 , H01S5/00 , H01S5/183
CPC分类号： H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S2301/173
摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
摘要翻译：提供了能够防止电流变窄层分离的激光二极管。激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层目前缩窄层。通过氧化含有Al的第一氧化层形成电流变窄层。通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。缓冲层的厚度为10nm以上。

14. 发明授权

US07873092B2 Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US07873092B2
公开(公告)日：2011-01-18
申请号：US11980459
申请日：2007-10-31
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01L31/101 , H01S5/0683 , H01S5/18311 , H01S2301/02
摘要： The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.
摘要翻译：本发明提供一种实现改进的光检测精度的激光二极管。激光二极管包括其中依次包括第一导电类型，有源层和第二导电类型的第二半导体层的第一半导体层的堆叠结构; 光电检测层; 以及设置在从有源层输出的光的驻波的波腹或节点的对应位置上的多个光吸收层。

15. 发明授权

US07871841B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07871841B2
公开(公告)日：2011-01-18
申请号：US12285267
申请日：2008-10-01
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01L21/00 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/18358 , H01S5/2086
摘要： A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.
摘要翻译：一种制造半导体发光器件的方法包括以下步骤：在半导体衬底上形成包括待氧化层的垂直腔结构，然后形成具有从上部至少穿透氧化层的深度的圆形槽从而形成其侧面被槽包围的柱状台面，从台面的侧面氧化待氧化层，形成电流限制层，形成掩模层至少覆盖台面的上表面的中心区域，并将台面的上表面和侧面的至少边缘暴露于外部，然后至少蚀刻台面的上表面和侧面的边缘使用掩模层作为掩模。

16. 发明授权

US07601987B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07601987B2
公开(公告)日：2009-10-13
申请号：US12078382
申请日：2008-03-31
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L27/15 , H01L33/02 , H01S5/0078 , H01S5/0264 , H01S5/18311
摘要： The present invention provides a semiconductor light emitting device realizing a lower detection level of spontaneous emission light by a semiconductor photodetector and an improvement in light detection precision by selectively reflecting spontaneous emission light. The semiconductor light emitting device includes a semiconductor light emitting element for generating light including stimulated emission light having a wavelength λo and spontaneous emission light having a wavelength band including the wavelength λo, a multilayer filter having a stack structure in which a low-refractive-index layer having a thickness of λ1/(4×na) (λ1 na and nb denote refractive index) are alternately stacked, and a semiconductor photodetector having a light absorption layer that absorbs part of the light passed through the multilayer filter.
摘要翻译：本发明提供一种半导体发光器件，其通过半导体光电检测器实现较低的自发发射光的检测水平，并且通过选择性地反射自发发射光来提高光检测精度。半导体发光器件包括用于产生包括具有波长兰波的受激发射光和包括波长兰波的波长带的自发发射光的光的半导体发光元件，具有堆叠结构的多层滤光器，其中低折射率厚度为λ1/（4xna）（λ1 na和nb表示折射率）的高折射率层交替堆叠以及具有吸收透过多层滤波器的部分光的光吸收层的半导体光电检测器。

17. 发明授权

US08450752B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08450752B2
公开(公告)日：2013-05-28
申请号：US12929515
申请日：2011-01-31
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01L31/12
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18375
摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

18. 发明授权

US08085827B2 Vertical cavity surface emitting laser and method of manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US08085827B2
公开(公告)日：2011-12-27
申请号：US12379824
申请日：2009-03-03
申请人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
发明人： Tomoyuki Oki , Rintaro Koda , Naoki Jogan , Yuji Masui , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/18358 , H01S5/2086
摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
摘要翻译：提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。台面的底部扩展到较低DBR层的顶面。基部是露出多层的端面的非平坦面。由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态裸露。包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

19. 发明申请

US20110176570A1 Semiconductor light emitting device 有权
公开(公告)号：US20110176570A1
公开(公告)日：2011-07-21
申请号：US13064337
申请日：2011-03-21
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/20
CPC分类号： H01S5/1833 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18322 , H01S5/18325 , H01S5/18383 , H01S5/2086 , H01S5/3095 , H01S5/4087
摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

20. 发明申请

US20110122910A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110122910A1
公开(公告)日：2011-05-26
申请号：US12929515
申请日：2011-01-31
申请人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
发明人： Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
IPC分类号： H01S5/026 , H01S5/323
CPC分类号： H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18375
摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.
摘要翻译：本发明提供一种半导体装置，其能够实现在使元件彼此粘合时减少诸如裂纹的缺陷的发生。半导体器件包括彼此粘附的第一元件和第二元件。第一元件和第二元件中的至少一个元件在面向第一元件和第二元件中的另一元件的一侧具有压力松弛层，并且压力松弛层包括具有突起/凹部的半导体部件，该突起/凹部包括朝向另一元件突出的突起以及填充在突起/凹部中的凹部中的树脂部件。

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