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11. 发明授权

US4846296A Hydraulic fluid pressure control system for use with power assist steering 失效
标题翻译：液压油压力控制系统，用于动力辅助转向
公开(公告)号：US4846296A
公开(公告)日：1989-07-11
申请号：US151122
申请日：1988-02-01
申请人： Koh Uchida , Takashi Kurihara , Makoto Miyoshi
发明人： Koh Uchida , Takashi Kurihara , Makoto Miyoshi
IPC分类号： B62D5/06 , B62D6/00 , B62D7/14
CPC分类号： B62D6/00 , B62D5/06 , B62D7/14
摘要： A power steering control valve can activate not only a power assist steering system but also a rear wheel steering system. The control valve includes valve elements relatively displaceable in response to a steering input torque to define therebetween parallel first and second fluid flow paths between an oil pump and a fluid reservoir to produce a first pressure difference in a front power cylinder in response to the steering torque. The valve elements define therebetween variable flow orifice means for producing a second pressure difference in a rear wheel power cylinder in response to the steering torque. The control valve also includes an externally controlled variable flow orifice valve. This orifice valve is arranged with respect to the variable flow orifice means such that it increases fluid flow passing therethrough in response to a second predetermined variable, such as a vehicle speed, to decrease the second pressure difference in the rear wheel power cylinder.
摘要翻译：动力转向控制阀不仅可以启动动力辅助转向系统，而且可以启动后轮转向系统。控制阀包括响应于转向输入扭矩相对可移动的阀元件，以在油泵和流体储存器之间在其间界定平行的第一和第二流体流动路径，以响应于转向扭矩产生前动力缸中的第一压力差。阀元件在其间限定可变流量孔装置，用于响应于转向转矩而在后轮动力缸中产生第二压力差。控制阀还包括外部控制的可变流量孔口阀。该孔口阀相对于可变流量孔装置布置，使得其响应于诸如车辆速度的第二预定变量增加流过其中的流体流量，以减小后轮动力缸中的第二压力差。

12. 发明授权

US09382641B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：US09382641B2
公开(公告)日：2016-07-05
申请号：US12767041
申请日：2010-04-26
申请人： Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
发明人： Mikiya Ichimura , Makoto Miyoshi , Mitsuhiro Tanaka
IPC分类号： H01L29/20 , C30B25/02 , C30B19/00 , C30B23/02 , C30B29/40 , H01L21/02 , H01L29/778
CPC分类号： C30B25/02 , C30B19/00 , C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.
摘要翻译：在本发明中提供了具有优选的二维电子气特性和接触特性的外延基板。在GaN衬底上形成沟道层。在AlN的沟道层上形成间隔层。在间隔层上形成阻挡层，其中III族氮化物具有InXAlyGazN（其中x + y + z = 1）的组成，并且至少包括In，Al和Ga，使得阻挡层的组成在用根据三元相图上的组成定义的四条线以InN，AlN和GaN为顶点包围。

13. 发明授权

US09090993B2 Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate 有权
标题翻译：包含超晶格组的外延衬底和用于制造外延衬底的方法
公开(公告)号：US09090993B2
公开(公告)日：2015-07-28
申请号：US13570665
申请日：2012-08-09
申请人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L21/02 , C30B29/40 , C30B25/18 , H01L29/15 , C30B29/68 , H01L33/00 , H01L33/04 , H01L33/12 , H01L29/778 , H01L29/872
CPC分类号： C30B29/403 , C30B25/18 , C30B25/183 , C30B29/68 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/7786 , H01L29/872 , H01L33/007 , H01L33/04 , H01L33/12
摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.
摘要翻译：提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。超晶格层组中含有压应变。在超晶格层组中，超晶格层离基底越远，压应变越大。

14. 发明授权

US08853828B2 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
公开(公告)号：US08853828B2
公开(公告)日：2014-10-07
申请号：US13353759
申请日：2012-01-19
申请人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
发明人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
IPC分类号： H01L29/20 , H01L21/02 , C30B29/40 , C30B25/18 , H01L29/872 , H01L29/778
CPC分类号： H01L21/0254 , C30B25/18 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0262 , H01L29/2003 , H01L29/7786 , H01L29/872
摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0
摘要翻译：在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

15. 发明授权

US08598626B2 Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure 有权
标题翻译：用于半导体器件的外延衬底，肖特基结结构和用于肖特基结结构的漏电流抑制方法
公开(公告)号：US08598626B2
公开(公告)日：2013-12-03
申请号：US12853685
申请日：2010-08-10
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462
摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.
摘要翻译：本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体满足0 @α@ 1范围的 - 序列参数α。

16. 发明授权

US08404045B2 Method for manufacturing group III nitride single crystals 有权
标题翻译： III族氮化物单晶的制造方法
公开(公告)号：US08404045B2
公开(公告)日：2013-03-26
申请号：US12655826
申请日：2010-01-08
申请人： Yoshitaka Kuraoka , Shigeaki Sumiya , Makoto Miyoshi , Minoru Imaeda
发明人： Yoshitaka Kuraoka , Shigeaki Sumiya , Makoto Miyoshi , Minoru Imaeda
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C30B23/02 , C30B25/02 , C30B25/20 , C30B29/406
摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.
摘要翻译：通过气相沉积在衬底1上形成III族氮化物的底层膜2。将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。通过助熔法在晶种膜4上生长III族氮化物单晶5。

17. 发明授权

US07982241B2 Epitaxial substrate, semiconductor device substrate, and HEMT device 有权
标题翻译：外延衬底，半导体器件衬底和HEMT器件
公开(公告)号：US07982241B2
公开(公告)日：2011-07-19
申请号：US12535859
申请日：2009-08-05
申请人： Yoshitaka Kuraoka , Makoto Miyoshi , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Yoshitaka Kuraoka , Makoto Miyoshi , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L29/24 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L29/7787
摘要： A buffer layer formed of Inx1Aly1Gaz1N formed on a base, with an upper part of the buffer layer containing columnar polycrystalline including a grain boundary existing in a direction substantially perpendicular to a surface of the base. The number of grain boundaries in the lower part of the buffer layer is greater than that in the upper part, and a full width at half maximum of an X-ray rocking curve of the upper part is 300-3000 seconds, RMS of the surface of the buffer layer is 0.2 nm-6 nm, and the ratio of the grain boundary width of the crystal grain of the upper part in a direction parallel to the base surface to the formation thickness of the buffer layer is 0.5-1.5.
摘要翻译：由Inx1Aly1Gaz1N形成的缓冲层，其形成在基底上，缓冲层的上部包含柱状多晶，其中包含沿基本上垂直于基底表面的方向存在的晶界。缓冲层下部的晶粒数大于上部的晶界数，上部的X射线摇摆曲线的半峰全宽为300〜3000秒，表面的RMS为的缓冲层的面积的比例为0.2nm〜6nm，上部晶粒的与晶面平行的方向的晶界宽度与缓冲层的形成厚度的比率为0.5〜1.5。

18. 发明申请

US20110024795A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于生产用于半导体器件的外延衬底的工艺
公开(公告)号：US20110024795A1
公开(公告)日：2011-02-03
申请号：US12884560
申请日：2010-09-17
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/2003 , C23C16/303 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/201 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： Provided is an epitaxial substrate capable of manufacturing a HEMT device that has excellent two-dimensional electron gas characteristics and is capable of performing normally-off operation. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by four straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride and to have a thickness of 5 nm or less.
摘要翻译：提供了能够制造具有优异的二维电子气特性并且能够执行常关操作的HEMT器件的外延衬底。沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，在四个围绕的范围内根据第一III族氮化物的组成（AlN摩尔分数）确定并且具有5nm或更小的厚度的直线。

19. 发明申请

US20100051961A1 EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE 有权
标题翻译：外延衬底，半导体器件衬底和HEMT器件
公开(公告)号：US20100051961A1
公开(公告)日：2010-03-04
申请号：US12535859
申请日：2009-08-05
申请人： Yoshitaka Kuraoka , Makoto Miyoshi , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Yoshitaka Kuraoka , Makoto Miyoshi , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L29/778 , H01L29/24
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L29/7787
摘要： A buffer layer formed of Inx1Aly1Gaz1N formed on a base, with an upper part of the buffer layer containing columnar polycrystalline including a grain boundary existing in a direction substantially perpendicular to a surface of the base. The number of grain boundaries in the lower part of the buffer layer is greater than that in the upper part, and a full width at half maximum of an X-ray rocking curve of the upper part is 300-3000 seconds, RMS of the surface of the buffer layer is 0.2 nm-6 nm, and the ratio of the grain boundary width of the crystal grain of the upper part in a direction parallel to the base surface to the formation thickness of the buffer layer is 0.5-1.5.
摘要翻译：由Inx1Aly1Gaz1N形成的缓冲层，其形成在基底上，缓冲层的上部包含柱状多晶，其中包含沿基本上垂直于基底表面的方向存在的晶界。缓冲层下部的晶粒数大于上部的晶界数，上部的X射线摇摆曲线的半峰全宽为300〜3000秒，表面的RMS为的缓冲层的面积的比例为0.2nm〜6nm，上部晶粒的与晶面平行的方向的晶界宽度与缓冲层的形成厚度的比率为0.5〜1.5。

20. 发明申请

US20050191013A1 Data link module 有权
标题翻译：数据链接模块
公开(公告)号：US20050191013A1
公开(公告)日：2005-09-01
申请号：US11017845
申请日：2004-12-22
申请人： Kazuya Sasaki , Masato Hino , Shinya Suzuki , Makoto Miyoshi
发明人： Kazuya Sasaki , Masato Hino , Shinya Suzuki , Makoto Miyoshi
IPC分类号： G02B6/36 , G02B6/42 , H01R13/66 , H05K5/03
CPC分类号： G02B6/4292 , G02B6/4246 , H01R13/665 , H01R2201/04
摘要： A case containing an optical interface section including a connector-fitting unit in its front portion, a printed board in its central portion, and an electrical interface section in its rear portion is accommodated in a housing. When a data link module is inserted in a cage, a housing tongue and a through hole both formed in a bottom plate of the housing are overlapped with a cage tongue and a lock pin both provided in and on a bottom plate of the cage, into and from which the data link module is inserted and removed, such that the lock pin is engaged in and locked by the lock hole. When removing the data link module from the cage, by angularly turning a bail pivotally supported by the connector-fitting unit, the cage tongue is pushed down following to the housing tongue with the camming operation of a plate cam, thus causing the lock hole to be disengaged from the lock pin.
摘要翻译：包括其前部中的连接器装配单元，其中央部分中的印刷板以及其后部中的电接口部的光学接口部的壳体容纳在壳体中。当将数据链接模块插入保持架中时，两个形成在壳体的底板中的壳体舌片和通孔与保持架的舌状物和设置在保持架的底板上的锁定销重叠，并且从中插入和移除数据链接模块，使得锁定销被锁定孔锁定并锁定。当从保持架中取出数据链接模块时，通过角度地转动由连接器装配单元枢轴支撑的吊环，通过板形凸轮的凸轮操作，使笼舌沿着壳体舌头向下推动，从而使锁定孔从锁定销脱离。

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