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11. 发明授权

US06770561B2 Method for depositing metal film through chemical vapor deposition process 失效
标题翻译：通过化学气相沉积工艺沉积金属膜的方法
公开(公告)号：US06770561B2
公开(公告)日：2004-08-03
申请号：US10321729
申请日：2002-12-18
申请人： Younsoo Kim
发明人： Younsoo Kim
IPC分类号： H01L2144
CPC分类号： C23C16/18 , H01L28/65
摘要： The present invention provides a method for depositing a metal film capable of suppressing oxygen from remaining within the metal film and preventing clustering of the metal film due to a low temperature deposition by employing a chemical vapor deposition process and a method for depositing a Ru film using the CVD process. The present invention provides a method for depositing a metal film by using a chemical vapor deposition process, including the steps of: loading a substrate to a reactor where a metal film will be deposited; heating the substrate to densify the metal film as simultaneous to a deposition of the metal film; and depositing the metal film on the substrate by adding a precursor of the metal film and a reaction gas having a reducing ability to the heated substrate.
摘要翻译：本发明提供了一种沉积金属膜的方法，该金属膜能够通过采用化学气相沉积法和金属膜沉积方法来保留金属膜内的金属膜，并防止由于低温沉积引起的金属膜聚集 CVD工艺。本发明提供一种通过使用化学气相沉积工艺沉积金属膜的方法，包括以下步骤：将基底装载到沉积金属膜的反应器中; 加热基板以与金属膜的沉积同时致密化金属膜; 以及通过向加热的基底添加金属膜的前体和具有还原能力的反应气体，将金属膜沉积在基底上。

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