会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    • 薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置
    • US08053779B2
    • 2011-11-08
    • US11783097
    • 2007-04-05
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • H01L29/12
    • H01L27/1255
    • Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.
    • 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。
    • 13. 发明申请
    • Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    • 薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置
    • US20070238227A1
    • 2007-10-11
    • US11783097
    • 2007-04-05
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • Woo-Sik JunKyung-Jin YooChoong-Youl ImJong-Hyun ChoiDo-Hyun Kwon
    • H01L21/84H01L21/00
    • H01L27/1255
    • Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.
    • 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。