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11. 发明申请

US20090115314A1 BORON NITRIDE NANOTUBE PASTE COMPOSITION, ELECTRON EMISSION SOURCE INCLUDING THE SAME, ELECTRON EMISSION DEVICE INCLUDING THE ELECTRON EMISSION SOURCE, AND BACKLIGHT UNIT AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE 失效
标题翻译： BORON NITRIDE NANOTUBE PASTE COMPOSITION，包括其的电子发射源，包括电子发射源的电子发射装置，以及包括电子发射装置的背光单元和电子发射显示装置
公开(公告)号：US20090115314A1
公开(公告)日：2009-05-07
申请号：US12193524
申请日：2008-08-18
申请人： Young-Chul Choi , Jong-Hwan Park , Kwang-Seok Jeong , Beom-Kwon Kim
发明人： Young-Chul Choi , Jong-Hwan Park , Kwang-Seok Jeong , Beom-Kwon Kim
IPC分类号： H01J1/62 , H01B1/12 , H01B1/22 , H01B1/02
CPC分类号： C03C8/16 , B82Y10/00 , C03C17/008 , H01J1/304 , H01J9/025 , H01J9/148 , H01J29/04 , H01J2201/30434 , H01J2201/30488
摘要： Boron nitride nanotube paste compositions, electron emission sources including the same, electron emission devices including the same and backlight units and electron emission display devices including the same are provided. A boron nitride nanotube paste composition includes about 100 parts by weight boron nitride nanotubes, from about 500 to about 2000 parts by weight glass frit, from about 1000 to about 2000 parts by weight filler, from about 2000 to about 4000 parts by weight organic solvent, and from about 4000 to about 6000 parts by weight polymer binder. Electron emission devices including the boron nitride nanotube electron emission sources have longer lifespan and improved uniformity among pixels.
摘要翻译：提供了氮化硼纳米管糊剂组合物，包括它们的电子发射源，包括它们的电子发射装置和包括它们的背光单元和电子发射显示装置。氮化硼纳米管糊剂组合物包括约100重量份的氮化硼纳米管，约500至约2000重量份的玻璃料，约1000至约2000重量份的填料，约2000至约4000重量份的有机溶剂，和约4000至约6000份重量的聚合物粘合剂。包括氮化硼纳米管电子发射源的电子发射器件具有更长的使用寿命和改善像素间的均匀性。

12. 发明授权

US07764010B2 Electron emission device, electron emission display apparatus having the same, and method of manufacturing the same 失效
标题翻译：电子发射装置，具有该电子发射装置的电子发射显示装置及其制造方法
公开(公告)号：US07764010B2
公开(公告)日：2010-07-27
申请号：US11524963
申请日：2006-09-22
申请人： Young-Chul Choi , Jong-Hwan Park , Deok-Hyeon Choe
发明人： Young-Chul Choi , Jong-Hwan Park , Deok-Hyeon Choe
IPC分类号： H01J1/304
CPC分类号： H01J29/04 , H01J31/127
摘要： An electron emission device that can uniformly emit electrons and has low manufacturing costs, a display apparatus having improved pixel uniformity by using the electron emission device, and a method of manufacturing the electron emission device, wherein the electron emission device includes a first substrate, a cathode and an electron emission source disposed on the first substrate, a gate electrode electrically insulated from the cathode, an insulating layer interposed between the cathode and the gate electrode to insulate the cathode from the gate electrode, and a resistance layer that contacts the cathode and includes semiconductive carbon nanotubes (CNTs).
摘要翻译：能够均匀地发射电子且制造成本低的电子发射装置，通过使用电子发射装置具有改善的像素均匀性的显示装置及其制造方法，其中电子发射装置包括第一基板，阴极和设置在第一基板上的电子发射源，与阴极电绝缘的栅电极，插入在阴极和栅电极之间以将阴极与栅电极绝缘的绝缘层和接触阴极的电阻层和包括半导体碳纳米管（CNT）。

13. 发明申请

US20100164343A1 ELECTRON EMISSION DEVICE, ELECTRON EMISSION DISPLAY APPARATUS HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：电子发射装置，具有该电子发射装置的电子发射显示装置及其制造方法
公开(公告)号：US20100164343A1
公开(公告)日：2010-07-01
申请号：US11524963
申请日：2006-09-22
申请人： Young-Chul Choi , Jong-Hwan Park , Deok-Hyeon Choe
发明人： Young-Chul Choi , Jong-Hwan Park , Deok-Hyeon Choe
IPC分类号： H01J1/62 , H01J1/02 , H01J9/02
CPC分类号： H01J29/04 , H01J31/127
摘要： An electron emission device that can uniformly emit electrons and has low manufacturing costs, a display apparatus having improved pixel uniformity by using the electron emission device, and a method of manufacturing the electron emission device, wherein the electron emission device includes a first substrate, a cathode and an electron emission source disposed on the first substrate, a gate electrode electrically insulated from the cathode, an insulating layer interposed between the cathode and the gate electrode to insulate the cathode from the gate electrode, and a resistance layer that contacts the cathode and includes semiconductive carbon nanotubes (CNTs).
摘要翻译：能够均匀地发射电子且制造成本低的电子发射装置，通过使用电子发射装置具有改善的像素均匀性的显示装置及其制造方法，其中电子发射装置包括第一基板，阴极和设置在第一基板上的电子发射源，与阴极电绝缘的栅电极，插入在阴极和栅电极之间以将阴极与栅电极绝缘的绝缘层和接触阴极的电阻层和包括半导体碳纳米管（CNT）。

14. 发明申请

US20080069290A1 Integrated monitoring method for nuclear device and system using the same 审中-公开
标题翻译：核设备和系统的综合监控方法采用相同的方式
公开(公告)号：US20080069290A1
公开(公告)日：2008-03-20
申请号：US11889705
申请日：2007-08-15
申请人： Jin-Ho Park , Doo-Byung Yoon , Young-Chul Choi , In-Soo Koo , Chang-Ho Son
发明人： Jin-Ho Park , Doo-Byung Yoon , Young-Chul Choi , In-Soo Koo , Chang-Ho Son
IPC分类号： G21C17/00
CPC分类号： G21C17/00 , G21D3/008 , G21D3/04 , Y02E30/40
摘要： An integrated monitoring method and a system using the same which can monitor structural integrity or an operating state of a nuclear device are provided. One integrated analysis unit receives a plurality of signals in order to integrate, mutually exchange, and analyze from a plurality of heterogeneous sensors installed in the nuclear device. The integrated analysis unit may notify an operator with an alarm since an alarm unit may be adhered to the integrated analysis unit. Accordingly, the present invention may provide accurate, useful, and various information due to integration of the sensor signal while not increasing a number of installed sensors, manufacture a simulator by generating a database of the sensor signals, or use a past signal as data for an optimum design by researching and analyzing the past signal.
摘要翻译：提供了可以监视核设备的结构完整性或操作状态的集成监视方法和使用该监视方法的系统。一个集成分析单元接收多个信号，以便从安装在核设备中的多个异构传感器集成，相互交换和分析。集成分析单元可以通知具有警报的操作者，因为警报单元可能被粘附到集成分析单元。因此，本发明可以提供精确，有用的和各种信息，这是由于传感器信号的集成而不增加多个安装的传感器，通过生成传感器信号的数据库来制造模拟器，或者使用过去的信号作为数据通过研究和分析过去信号的最佳设计。

15. 发明申请

US20080003733A1 Method of forming a carbon nanotube structure and method of manufacturing field emission device using the method of forming a carbon nanotube structure 失效
标题翻译：形成碳纳米管结构的方法和使用形成碳纳米管结构的方法制造场致发射器件的方法
公开(公告)号：US20080003733A1
公开(公告)日：2008-01-03
申请号：US11656370
申请日：2007-01-23
申请人： Ha-Jin Kim , In-Taek Han , Young-Chul Choi , Kwang-Seok Jeong
发明人： Ha-Jin Kim , In-Taek Han , Young-Chul Choi , Kwang-Seok Jeong
IPC分类号： H01L21/8234
CPC分类号： H01J9/025 , Y10S977/742 , Y10S977/842 , Y10S977/938 , Y10S977/939
摘要： A method of forming a Carbon NanoTube (CNT) structure and a method of manufacturing a Field Emission Device (FED) using the method of forming a CNT structure includes: forming an electrode on a substrate, forming a buffer layer on the electrode, forming a catalyst layer in a particle shape on the buffer layer, etching the buffer layer exposed through the catalyst layer, and growing CNTs from the catalyst layer formed on the etched buffer layer.
摘要翻译：使用形成CNT结构的方法形成碳纳米管（CNT）结构的方法和制造场致发射器件（FED）的方法包括：在基板上形成电极，在电极上形成缓冲层，形成在缓冲层上形成颗粒形状的催化剂层，蚀刻通过催化剂层暴露的缓冲层，以及从形成在蚀刻缓冲层上的催化剂层生长CNT。

16. 发明授权

US06882098B2 Cold cathode electron source 失效
标题翻译：冷阴极电子源
公开(公告)号：US06882098B2
公开(公告)日：2005-04-19
申请号：US10223625
申请日：2002-08-20
申请人： Young-Chul Choi , Ji-Hoon Ahn , Hyek-Bok Rhee , Dong-Hee Han
发明人： Young-Chul Choi , Ji-Hoon Ahn , Hyek-Bok Rhee , Dong-Hee Han
IPC分类号： H01J1/312 , H01J1/304 , H01J3/02 , H01J9/02 , H01J1/62
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30469
摘要： The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).
摘要翻译：本发明提供一种冷阴极电子源及其制造方法。冷阴极电子源包括沉积有催化剂金属层，绝缘层和栅极金属层的基板; 通过催化剂金属层，绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体，其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。该方法包括在衬底上沉积催化剂金属层，绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层，绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度（℃）的低温气氛中生长碳纳米管而形成发射体。

17. 发明授权

US07855496B2 Boron nitride nanotube paste composition, electron emission source including the same, electron emission device including the electron emission source, and backlight unit and electron emission display device including the electron emission device 失效
标题翻译：氮化硼纳米管糊剂组合物，包括其的电子发射源，包括电子发射源的电子发射装置和包括电子发射装置的背光单元和电子发射显示装置
公开(公告)号：US07855496B2
公开(公告)日：2010-12-21
申请号：US12193524
申请日：2008-08-18
申请人： Young-Chul Choi , Jong-Hwan Park , Kwang-Seok Jeong , Beom-Kwon Kim
发明人： Young-Chul Choi , Jong-Hwan Park , Kwang-Seok Jeong , Beom-Kwon Kim
IPC分类号： H01J9/02
CPC分类号： C03C8/16 , B82Y10/00 , C03C17/008 , H01J1/304 , H01J9/025 , H01J9/148 , H01J29/04 , H01J2201/30434 , H01J2201/30488
摘要： Boron nitride nanotube paste compositions, electron emission sources including the same, electron emission devices including the same and backlight units and electron emission display devices including the same are provided. A boron nitride nanotube paste composition includes about 100 parts by weight boron nitride nanotubes, from about 500 to about 2000 parts by weight glass frit, from about 1000 to about 2000 parts by weight filler, from about 2000 to about 4000 parts by weight organic solvent, and from about 4000 to about 6000 parts by weight polymer binder. Electron emission devices including the boron nitride nanotube electron emission sources have longer lifespan and improved uniformity among pixels.
摘要翻译：提供了氮化硼纳米管糊剂组合物，包括它们的电子发射源，包括它们的电子发射装置和包括它们的背光单元和电子发射显示装置。氮化硼纳米管糊剂组合物包括约100重量份的氮化硼纳米管，约500至约2000重量份的玻璃料，约1000至约2000重量份的填料，约2000至约4000重量份的有机溶剂，和约4000至约6000份重量的聚合物粘合剂。包括氮化硼纳米管电子发射源的电子发射器件具有更长的使用寿命和改善像素间的均匀性。

18. 发明授权

US07652418B2 Electronic emission device, electron emission display device having the same, and method of manufacturing the electron emission device 失效
标题翻译：电子发射装置，具有该电子发射装置的电子发射显示装置及其制造方法
公开(公告)号：US07652418B2
公开(公告)日：2010-01-26
申请号：US11586494
申请日：2006-10-26
申请人： Young-Chul Choi , Jong-Hwan Park
发明人： Young-Chul Choi , Jong-Hwan Park
IPC分类号： H01J1/62 , H01J63/04 , H01J1/46 , H01J21/10 , H01J1/02 , H01J9/24 , H01J9/00 , H01J9/12 , H01J9/04
CPC分类号： H01J31/127 , B82Y10/00 , H01J29/04 , H01J29/481 , H01J29/86 , H01J63/02 , H01J63/04 , H01J2201/30469 , Y10S977/742 , Y10S977/743 , Y10S977/765 , Y10S977/876
摘要： An electron emission device which can uniformly emit electrons and can be simply manufactured at a reduced cost, and a display apparatus having improved uniform brightness of pixels by using the electron emission device. In addition, a simple method of manufacturing the electron emission device. The electron emission device includes: a first substrate; a cathode electrode and an electron emission unit disposed on the first substrate; a gate electrode electrically insulated from the cathode electrode; an insulating layer disposed between the cathode electrode and the gate electrode to insulate the cathode electrode from the gate electrode; and an electron emission source including carbon nanotubes (CNTs) that contact the cathode electrode, wherein distances between the gate electrode and the tips of the CNTs are uniform.
摘要翻译：可以均匀地发射电子并且可以以较低成本简单地制造的电子发射装置，以及通过使用电子发射装置具有改善的像素均匀亮度的显示装置。另外，制造电子发射装置的简单方法。电子发射装置包括：第一基板; 设置在所述第一基板上的阴极电极和电子发射单元; 与所述阴极电绝缘的栅电极; 绝缘层，设置在所述阴极电极和所述栅极电极之间，以使所述阴极电极与所述栅电极绝缘; 以及包括接触阴极的碳纳米管（CNT）的电子发射源，其中，栅电极与CNT的尖端之间的距离是均匀的。

19. 发明授权

US07615917B2 Electron emission source, method of preparing the same, and electron emission device employing the electron emission source 失效
标题翻译：电子发射源，其制备方法和使用电子发射源的电子发射装置
公开(公告)号：US07615917B2
公开(公告)日：2009-11-10
申请号：US11491997
申请日：2006-07-25
申请人： Young-Chul Choi , Jae-Myung Kim , Chang-Wook Kim , Eun-Mi Lee , Joong-Woo Nam , Sung-Hee Cho , Jong-Hwan Park , Ji-Soon Ihm
发明人： Young-Chul Choi , Jae-Myung Kim , Chang-Wook Kim , Eun-Mi Lee , Joong-Woo Nam , Sung-Hee Cho , Jong-Hwan Park , Ji-Soon Ihm
IPC分类号： H01J1/62
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J31/127 , H01J2201/30469
摘要： An electron emission source including a carbon-based material coated with metal carbide in the surface coating layer, of which the metal has a negative Gibbs free energy when forming the metal carbide at 1,500 K or lower, a method of preparing electron emission sources, and an electron emission device including the electron emission source. The electron emission source includes a carbon nanotube coated with metal carbide or a carbon nanotube having a metal carbide layer and a metal coating layer, which are sequentially formed thereon. Thus, the electron emission source has long lifespan without deterioration of electron emitting characteristics. The electron emission source can be used to manufacture electron emission devices with improved reliability.
摘要翻译：一种电子发射源，包括在表面被覆层中涂覆有金属碳化物的碳基材料，当在1500K以下的金属碳化物形成时，金属具有负的吉布斯自由能，制备电子发射源的方法以及包括电子发射源的电子发射装置。电子发射源包括涂覆有金属碳化物的碳纳米管或具有顺序地形成在其上的金属碳化物层和金属涂层的碳纳米管。因此，电子发射源具有长寿命而不劣化电子发射特性。电子发射源可用于制造具有可靠性提高的电子发射装置。

20. 发明申请

US20090134766A1 ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, ELECTRON EMISSION TYPE BACKLIGHT UNIT AND ELECTRON EMISSION DISPLAY DEVICE 审中-公开
标题翻译：电子发射源，电子发射装置，电子发射型背光单元和电子发射显示装置
公开(公告)号：US20090134766A1
公开(公告)日：2009-05-28
申请号：US12184147
申请日：2008-07-31
申请人： Beom-Kwon Kim , Young-Chul Choi
发明人： Beom-Kwon Kim , Young-Chul Choi
IPC分类号： H01J1/02
CPC分类号： H01J31/127 , H01J1/304 , H01J29/04 , H01J2201/304 , H01J2201/30403 , H01J2201/30469 , H01J2329/0407 , H01J2329/041 , H01J2329/0455
摘要： An electron emission source electrically coupled to a cathode, the electron emission source including: an insulating material at or near the center of the electron emission source; and an electron emission material around the insulating material.
摘要翻译：电子发射源电耦合到阴极，所述电子发射源包括：在所述电子发射源的中心处或附近的绝缘材料; 以及围绕绝缘材料的电子发射材料。

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