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11. 发明授权

US09116019B2 Technique for compensating for abnormal output of resolver for environmentally friendly vehicle 有权
标题翻译：用于补偿环保车辆解析器异常输出的技术
公开(公告)号：US09116019B2
公开(公告)日：2015-08-25
申请号：US13467363
申请日：2012-05-09
申请人： Bum Sik Kim , Tae Hwan Chung , Kang Ho Jeong
发明人： Bum Sik Kim , Tae Hwan Chung , Kang Ho Jeong
IPC分类号： B60L15/00 , G01D5/244 , G01D5/249 , H02P6/16
CPC分类号： G01D5/2449 , G01D5/2495 , H02P6/16
摘要： Disclosed is a technique for compensating for an abnormal output of a resolver. More specifically, a central processing unit (CPU) sets a current motor position angle before compensation θn,ORG as a current motor position angle θn and obtains a motor position change Δθn[rad] between a current sampling [n] and a previous sampling [n−1] and a motor position change Δθn-1[rad] between the previous sampling [n−1] and a more previous sampling [n−2]. Subsequently, a variable A is calculated based on the above angles. The CPU determines whether to perform the compensation by comparing the calculated variable A and a calibration variable K and calculates a current motor position angle for compensation θn[rad]. Finally, the CPU compensates for the absence of motor rotor position information with the calculated current motor position angle for compensation θn[rad].
摘要翻译：公开了一种用于补偿分解器的异常输出的技术。更具体地说，中央处理单元（CPU）将补偿前的当前电动机位置角度设置为：n，ORG作为当前电动机位置角度＆amp; n; n并获得电动机位置变化＆Dgr;电流采样之间的n [rad] [n]和先前的采样[n-1]和前一个采样[n-1]之间的电机位置变化＆Dgr;＆Theta; n-1 [rad]。随后，基于上述角度计算变量A. CPU通过比较计算的变量A和校准变量K来确定是否执行补偿，并计算补偿的当前电动机位置角; n [rad]。最后，CPU补偿电机转子位置信息的不存在与计算出的当前电机位置角度进行补偿; n [rad]。

12. 发明授权

US08786584B2 Liquid crystal display device having output transistor having large capacitor component 有权
标题翻译：具有输出晶体管的电容器部件大的液晶显示装置
公开(公告)号：US08786584B2
公开(公告)日：2014-07-22
申请号：US12629617
申请日：2009-12-02
申请人： Lee Young Kim , Bum Sik Kim , Hoe Woo Koo
发明人： Lee Young Kim , Bum Sik Kim , Hoe Woo Koo
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0426 , G09G2310/0286 , G09G2310/0291 , G09G2320/0252 , G11C19/18 , G11C19/28
摘要： The liquid crystal display device includes an output portion which is configured to include an output transistor having a large capacitor component. The output portion includes a top electrode which is configured to include an output transistor having a large capacitor component. As such, the liquid crystal display device can enhance the response speed of liquid crystal.
摘要翻译：液晶显示装置包括输出部，其被配置为包括具有大电容器部件的输出晶体管。输出部分包括顶电极，其被配置为包括具有大电容器部件的输出晶体管。因此，液晶显示装置可以提高液晶的响应速度。

13. 发明授权

US07556990B2 CMOS image sensor having improved signal efficiency and method for manufacturing the same 失效
标题翻译：具有改进的信号效率的CMOS图像传感器及其制造方法
公开(公告)号：US07556990B2
公开(公告)日：2009-07-07
申请号：US11319969
申请日：2005-12-29
申请人： Bum Sik Kim
发明人： Bum Sik Kim
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area and a circuit area, a STI isolation layer in the substrate for electrical isolation within the circuit area, and a field oxide in the substrate for electrical isolation within the image area.
摘要翻译： CMOS图像传感器及其制造方法通过减少暗信号来提高信号效率，并且包括具有包括图像区域和电路区域的第一导电类型的基板，在基板内的用于电隔离的STI隔离层电路区域和基板中的场氧化物，用于在图像区域内进行电隔离。

14. 发明申请

US20080218652A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20080218652A1
公开(公告)日：2008-09-11
申请号：US12005618
申请日：2007-12-28
申请人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
发明人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
IPC分类号： G02F1/1333
CPC分类号： G02F1/136204
摘要： A liquid crystal display device for reducing power consumption is disclosed.In the liquid crystal display device, a liquid crystal display panel has liquid crystal cells which are defined by a gate line and a data line and which are arranged in a matrix type. An electrostatic discharge protection circuit is mounted on the liquid crystal display panel and is connected to any one of the gate line and the data line. A first voltage supply line supplies the same voltage as a first gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit. And a second voltage supply line supplies the same voltage as a second gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit.
摘要翻译：公开了一种用于降低功耗的液晶显示装置。在液晶显示装置中，液晶显示面板具有由栅极线和数据线限定并且以矩阵状排列的液晶单元。静电放电保护电路安装在液晶显示面板上，并连接到栅极线和数据线中的任意一个。第一电压供应线路提供与栅极线提供给静电放电保护电路的第一栅极电压相同的电压。并且第二电压供应线路提供与栅极线提供给静电放电保护电路的第二栅极电压相同的电压。

15. 发明申请

US20090289286A1 CMOS Image Sensor Having improved signal eficiency and method for manufacturing the same 审中-公开
标题翻译： CMOS图像传感器具有改进的信号效率及其制造方法
公开(公告)号：US20090289286A1
公开(公告)日：2009-11-26
申请号：US12457259
申请日：2009-06-04
申请人： Bum Sik Kim
发明人： Bum Sik Kim
IPC分类号： H01L31/112
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area and a circuit area, a STI isolation layer in the substrate for electrical isolation within the circuit area, and a field oxide in the substrate for electrical isolation within the image area.
摘要翻译： CMOS图像传感器及其制造方法通过减少暗信号来提高信号效率，并且包括具有包括图像区域和电路区域的第一导电类型的基板，在基板内的用于电隔离的STI隔离层电路区域和基板中的场氧化物，用于在图像区域内进行电隔离。

16. 发明授权

US08947332B2 Liquid crystal display device having an electrostatic discharge protection circuit 有权
标题翻译：具有静电放电保护电路的液晶显示装置
公开(公告)号：US08947332B2
公开(公告)日：2015-02-03
申请号：US12005618
申请日：2007-12-28
申请人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
发明人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
IPC分类号： G09G3/36 , G02F1/1362
CPC分类号： G02F1/136204
摘要： A liquid crystal display device comprises a liquid crystal display panel having liquid crystal cells which are defined by a gate line and a data line and which are arranged in a matrix type, an electrostatic discharge protection circuit mounted on the liquid crystal display panel and connected to any one of the gate line and the data line, a first voltage supply line supplying the same voltage as a first gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit, and a second voltage supply line supplying the same voltage as a second gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit.
摘要翻译：液晶显示装置包括液晶显示面板，液晶显示面板具有由栅极线和数据线限定的液晶单元，并且以矩阵型布置，安装在液晶显示面板上的静电放电保护电路，栅极线和数据线中的任一个，提供与栅极线提供给静电放电保护电路的第一栅极电压相同的电压的第一电压电源线和提供与静电放电保护电路相同的电压的第二电压供应线第二栅极电压，栅极线被提供给静电放电保护电路。

17. 发明授权

US07211847B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US07211847B2
公开(公告)日：2007-05-01
申请号：US11318503
申请日：2005-12-28
申请人： Bum Sik Kim
发明人： Bum Sik Kim
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14632 , H01L27/14643 , H01L27/14656 , H01L27/14689
摘要： A CMOS image sensor includes a photo sensing device for generating photo charges, a floating diffusion region for storing the photo charges generated by the photo sensing device therein, a transfer transistor connected between the photo sensing device and the floating diffusion region for transferring the photo charges generated by the photo sensing device to the floating diffusion region, a reset transistor connected between a supply voltage terminal and the floating diffusion region for discharging the charges stored in the floating diffusion region to reset the floating diffusion region, a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo sensing device, a switching transistor connected to the drive transistor for performing an addressing operation, and a charge control device connected between the photo sensing device and the transfer transistor for controlling the amount of charges stored in the photo sensing device.
摘要翻译： CMOS图像传感器包括用于产生光电荷的光感测装置，用于存储由其中的感光装置产生的光电荷的浮动扩散区域，连接在感光装置和浮动扩散区域之间的传输晶体管，用于传送照相电荷由所述感光装置产生到所述浮动扩散区域的复位晶体管，连接在电源电压端子和所述浮动扩散区域之间的复位晶体管，用于对存储在所述浮动扩散区域中的电荷进行放电以复位所述浮动扩散区域;驱动晶体管，源极跟随器缓冲放大器，响应于来自光感测装置的输出信号，连接到用于执行寻址操作的驱动晶体管的开关晶体管，以及连接在感光器件和转移晶体管之间的电荷控制器件，用于控制存储在光感测装置中的电荷。

18. 发明授权

US07646048B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US07646048B2
公开(公告)日：2010-01-12
申请号：US11319592
申请日：2005-12-29
申请人： Bum Sik Kim
发明人： Bum Sik Kim
IPC分类号： H01L31/06
CPC分类号： H01L27/14609 , H04N5/374 , H04N5/3745
摘要： A CMOS image sensor includes a photo-transistor capable of performing photo-sensing and active amplification. The photo-transistor is installed to improve low illustration characteristics while maintaining an existing pixel operation. The CMOS image sensor also includes a reset transistor connected to the photo-transistor and adapted to perform a reset function, a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo-transistor, and a switching transistor connected to the drive transistor and adapted to perform an addressing function.
摘要翻译： CMOS图像传感器包括能够执行光感测和有源放大的光电晶体管。安装光电晶体管以改善低插图特性，同时保持现有的像素操作。 CMOS图像传感器还包括连接到光电晶体管并且适于执行复位功能的复位晶体管，用于响应于来自光电晶体管的输出信号充当源跟随缓冲放大器的驱动晶体管，以及开关晶体管连接到驱动晶体管并且适于执行寻址功能。

19. 发明授权

US07358108B2 CMOS image sensor and method for fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07358108B2
公开(公告)日：2008-04-15
申请号：US11022890
申请日：2004-12-28
申请人： Chang Hun Han , Bum Sik Kim
发明人： Chang Hun Han , Bum Sik Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, forming a first conductive type heavily doped impurity ion region in the semiconductor substrate at both sides of the trench, forming a device isolation film by interposing an insulating film between the trench and the device isolation, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive type impurity ion region for a photodiode in the semiconductor substrate between the gate electrode and the device isolation film.
摘要翻译：公开了一种CMOS图像传感器及其制造方法，其中有源区域和场区域之间的边界不被离子注入所损坏。 CMOS图像传感器的制造方法包括在第一导电型半导体衬底中形成沟槽，在沟槽两侧的半导体衬底中形成第一导电型重掺杂杂质离子区域，通过插入绝缘膜形成器件隔离膜在沟槽和器件隔离之间，在半导体衬底上依次形成栅绝缘膜和栅电极，以及在栅电极和器件隔离膜之间的半导体衬底中形成用于光电二极管的第二导电型杂质离子区。

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