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    • 11. 发明申请
    • Method for producing highly corrosion-resistant colored article made of steel
    • 钢制高耐腐蚀彩色制品的制造方法
    • US20070251605A1
    • 2007-11-01
    • US11653209
    • 2007-01-16
    • Young Hee Kim
    • Young Hee Kim
    • C23C8/34
    • C23C8/80C23C8/34
    • The present invention provides a method for producing a highly corrosion-resistant colored article made of steel, which are highly corrosion-resistant and has a variety of vivid surface colors, by subjecting the surface of a nitrided steel article to oxidizing heat treatment to form a colored oxide film layer. The method for producing a highly corrosion-resistant colored article made of steel includes the steps of (a) subjecting an article made of steel to nitriding and (b) subjecting the steel article thus treated in step (a) to surface processing such as abrasion, buffing, polishing or the like, and then to oxidizing heat treatment in an oxidizing atmosphere at 100 to 700° C. for 30 seconds to 100 hours, to form a colored oxide film layer on the surface of the steel article.
    • 本发明提供一种通过对氮化钢制品的表面进行氧化热处理以形成具有高耐腐蚀性并具有多种生动的表面颜色的由钢制成的高耐蚀性着色物品的方法, 着色氧化膜层。 用于制造由钢制成的高耐腐蚀着色物品的方法包括以下步骤:(a)对由钢制成的制品进行氮化处理,(b)使如此处理的钢制品在步骤(a)中进行表面处理如磨损 抛光,抛光等,然后在氧化气氛中在100〜700℃下氧化30秒〜100小时,在钢制品表面形成着色氧化膜层。
    • 13. 发明授权
    • Force transfer mechanism
    • 力传递机制
    • US09447854B2
    • 2016-09-20
    • US13819517
    • 2011-08-26
    • Young Hee Kim
    • Young Hee Kim
    • E05C1/02F16H21/44F16H25/18F16H19/04F16F15/04E05C1/04E05C1/10
    • F16H21/44F16F15/046F16F2232/00F16H19/04F16H25/183Y10T74/18096Y10T74/18992
    • A force transfer mechanism includes cylindrical guide housing; a movable body which is slidably arranged in the guide housing so as to move in a linear direction by means of an externally applied force, and which includes a cutout groove having one or more inclined surfaces, and through-holes formed in a direction perpendicular to the linear motion direction in portions corresponding to the inclined surfaces; and a slave unit, one end of which is coupled to the movable body such that said end passes through the through-holes of the movable body and moves along the inclined surfaces of the cutout groove vertically relative to the movement direction of the movable body, and the other end of which is elastically supported.
    • 力传递机构包括圆柱形引导壳体; 可移动体,其可滑动地布置在所述引导壳体中,以便通过外力施加在线性方向上移动,并且其包括具有一个或多个倾斜表面的切口槽,以及沿垂直于所述导向壳体的方向形成的通孔 对应于倾斜表面的部分的直线运动方向; 以及一个从动单元,其一端联接到可移动体,使得所述端部穿过可移动体的通孔,并且沿切口槽的倾斜表面相对于可移动体的移动方向垂直移动, 并且其另一端被弹性地支撑。
    • 14. 发明申请
    • CLOSED FORCE TRANSMISSION DEVICE AND SAFETY DOOR LOCK USING SAME
    • 封闭式传动装置和安全门锁使用
    • US20150042106A1
    • 2015-02-12
    • US14379929
    • 2012-03-15
    • Young Hee Kim
    • Young Hee Kim
    • E05C1/12
    • E05C1/14E05B63/06E05C1/12Y10T292/096
    • The present invention relates to a closed force transmission device in which an insertion depth of a latch bolt inserted into a latch bolt insertion groove can be adjusted to improve safety and components are simplified to allow for ease of assembly and to improve durability. The present invention also relates to a safety door lock using the device. The closed force transmission device of the present invention includes: a cylindrical body housing of which both sides are opened to penetrate a door; a main body slidably arranged within the body housing such that the main body moves in a straight line direction by the force applied from an external source, the main body having at least one tilt surface and a main body movement space formed orthogonally to the straight movement direction in a portion corresponding to the tilt surface.
    • 本发明涉及一种封闭力传递装置,其中可以调节插入到闩锁插入槽中的闩锁的插入深度以改善安全性和部件,从而容易组装并提高耐久性。 本发明还涉及使用该装置的安全门锁。 本发明的封闭传动装置包括:两侧打开以穿过门的圆筒体壳体; 主体,其可滑动地布置在主体壳体内,使得主体通过从外部源施加的力沿直线方向移动,主体具有至少一个倾斜表面和与直线运动正交形成的主体运动空间 在与倾斜面对应的部分中的方向。
    • 19. 发明授权
    • Semiconductor memory test circuit and method for the same
    • 半导体存储器测试电路及其方法相同
    • US06389563B1
    • 2002-05-14
    • US09340731
    • 1999-06-29
    • Jin Keun OhYoung Hee Kim
    • Jin Keun OhYoung Hee Kim
    • G11C2900
    • G11C29/34G11C29/40G11C29/46
    • A semiconductor memory test circuit and a method for the same to reduce the test time in testing a semiconductor memory. The semiconductor memory test circuit includes: a parallel test circuit for performing a parallel test when inputting a battery backup signal (bbu), a column address signal (cas5), a CAS before RAS signal (cbr), a write enable signal (ew), a power-up bar signal (pwrupb), and a row address signal (ras71)); and a test mode circuit which is controlled by a combination of a parallel test signal (pt) and the battery backup signal (bbu) generated from the parallel test circuit, and generates a test time reduction signal (ttrb), whereby the semiconductor memory test circuit compresses one least significant bit indicating a row address of a device in the case of a 4K refresh operation when the test time reduction signal (ttrb) is enabled, and compresses two least significant bits indicating a row address of a device in the case of an 8K refresh operation when the test time reduction signal (ttrb) is enabled.
    • 一种半导体存储器测试电路及其方法,用于减少测试半导体存储器的测试时间。 半导体存储器测试电路包括:并行测试电路,用于在输入电池备用信号(bbu),列地址信号(cas5),RAS信号(cbr)之前的CAS,写使能信号(ew) ,上电条信号(pwrupb)和行地址信号(ras71)); 以及由并行测试电路产生的并行测试信号(pt)和电池备用信号(bbu)的组合控制的测试模式电路,并且产生测试时间减少信号(ttrb),由此半导体存储器测试 当测试时间减少信号(ttrb)被使能时,在4K刷新操作的情况下,电路压缩指示设备的行地址的一个最低有效位,并且在两个最低有效位的情况下压缩指示设备的行地址的两个最低有效位 当测试时间减少信号(ttrb)被使能时,8K刷新操作。