专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5504526A Solid-state image sensing device with storage-diode potential controller 失效
标题翻译：具有存储二极管电位控制器的固态摄像装置
公开(公告)号：US5504526A
公开(公告)日：1996-04-02
申请号：US155833
申请日：1993-11-23
申请人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
发明人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3728 , H04N5/376
CPC分类号： H04N5/3728 , H01L27/14831 , H04N5/3597
摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要翻译：固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组。电荷转移部分与图像元素阵列耦合。转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

12. 发明授权

US5739851A Driving method for solid state imaging device 失效
标题翻译：固态成像装置的驱动方法
公开(公告)号：US5739851A
公开(公告)日：1998-04-14
申请号：US526453
申请日：1995-09-11
申请人： Shinji Ohsawa , Yoshiyuki Matsunaga , Nahoko Endo
发明人： Shinji Ohsawa , Yoshiyuki Matsunaga , Nahoko Endo
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/3728 , H04N5/378
CPC分类号： H04N5/3597 , H01L27/14806 , H04N5/3722
摘要： A driving method for a solid state imaging device with a horizontal blanking period for each scanning line and a vertical blanking period for each field and including a plurality of cell sections formed in a matrix form on a semiconductor substrate, the plurality of cell sections including a plurality of signal charge storage sections for storing signal charges, a plurality of readout sections for reading out the signal charges from the signal charge storing sections, a plurality of signal charge transferring sections for transferring the readout signal charges, and a plurality of pixel electrodes electrically connected to the plurality of signal charge storage sections, a photoelectric converting layer including at least one photoelectric converting film stacked on the plurality of pixel electrodes, the photoelectric converting film being electrically connected to the electrodes and having a pn junction, and at least one transparent electrode formed on the photoelectric converting film.
摘要翻译：一种用于每个扫描线的水平消隐期和每个场的垂直消隐周期的固态成像装置的驱动方法，包括在半导体衬底上以矩阵形式形成的多个单元部分，所述多个单元部分包括一个用于存储信号电荷的多个信号电荷存储部分，用于从信号电荷存储部分读出信号电荷的多个读出部分，用于传送读出信号电荷的多个信号电荷转移部分，以及多个像素电极，连接到所述多个信号电荷存储部，光电转换层，包括堆叠在所述多个像素电极上的至少一个光电转换膜，所述光电转换膜电连接到所述电极并具有pn结，以及至少一个透明电极形成在光电转换膜上 m。

13. 发明授权

US5210433A Solid-state CCD imaging device with transfer gap voltage controller 失效
标题翻译：带传输间隙电压控制器的固态CCD成像装置
公开(公告)号：US5210433A
公开(公告)日：1993-05-11
申请号：US962003
申请日：1992-10-15
申请人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/76841 , H01L27/14831
摘要： A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes. The gap potential control electrode layer is applied with a gap potential control voltage and steadily sets, in accordance with the applied voltage, the potential in layer sections of the channel layer located below the gap section of the transfer electrodes at a predetermined level intermediate between "High" and "Low" level voltages of the channel layers upon charge transfer.
摘要翻译：固体CCD成像装置具有基板，设置在基板中的像素部的感光像素单元和设置在基板中的转印部，用于传送沿预定的传送方向从像素单元读出的信号电荷载流子。转印部分具有形成在衬底中的半导体电荷转移沟道层，并且绝缘地设置在衬底上方并沿上述方向排列的传输电极，同时保持预定的间隙部分。每个转移电极限定一个电荷转移级。间隙电位控制电极层绝缘地设置在电极上方。间隙电位控制电极层被施加间隙电位控制电压，并且根据施加的电压稳定地将位于传输电极的间隙部分下方的沟道层的层部分中的电位设置在“ 电荷转移时通道层的“高”和“低”电平电压。

14. 发明授权

US5715001A Solid-state camera device and method of driving thereof 失效
标题翻译：固态摄像装置及其驱动方法
公开(公告)号：US5715001A
公开(公告)日：1998-02-03
申请号：US422160
申请日：1995-04-14
申请人： Shinji Ohsawa , Yoshiyuki Matsunaga
发明人： Shinji Ohsawa , Yoshiyuki Matsunaga
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/3722 , H04N5/3728 , H04N5/378 , H04N3/14
CPC分类号： H04N5/3658 , H01L27/14831 , H01L27/14837 , H04N5/3722
摘要： A solid-state camera device of the present invention includes a semiconductor substrate, a plurality of charge storage regions formed on the semiconductor substrate, a charge transfer region formed on the semiconductor substrate, for transferring charges read from the plurality of charge storage regions, a bias charge injection diode formed on the semiconductor substrate, for injecting a bias charge into the charge storage region, and sweeping out section for sweeping at least part of the charge remaining in the charge transfer region before resetting part of the bias charge injected into the charge storage region to emit part of the bias charge into the charge transfer region. That is, the present invention has a feature that the residual charge lying in the charge transfer region below the transfer gate specified for reading is swept before resetting the bias charge after injecting the bias charge into the charge storage region.
摘要翻译：本发明的固态照相机装置包括半导体衬底，形成在半导体衬底上的多个电荷存储区域，形成在半导体衬底上的用于传送从多个电荷存储区域读取的电荷的电荷转移区域，形成在半导体衬底上的偏置电荷注入二极管，用于将偏置电荷注入到电荷存储区域中;以及扫除部分，用于扫描在电荷转移区域中残留的电荷的至少一部分，然后复位注入电荷的部分偏置电荷存储区域以将偏置电荷的一部分发射到电荷转移区域中。也就是说，本发明的特征在于，在将偏置电荷注入到电荷存储区域中之前，在复位偏置电荷之前，扫描位于规定用于读取的传输栅极下方的电荷转移区域中的残余电荷。

15. 发明授权

US5343061A Solid-state imaging device suppressing dark-current noise 失效
标题翻译：固态成像装置抑制暗电流噪声
公开(公告)号：US5343061A
公开(公告)日：1994-08-30
申请号：US67966
申请日：1993-05-27
申请人： Hirofumi Yamashita , Yoshiyuki Matsunaga
发明人： Hirofumi Yamashita , Yoshiyuki Matsunaga
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/369 , H04N5/3722 , H04N5/3728 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14893
摘要： An FIT or IT solid-state imaging device comprising a p-type Si substrate in which n-type regions forming storage diode portions, signal read-out portions, n-type CCD channels, and p.sup.+ -type element isolating regions are formed, a solid-state imaging element chip on the top of the substrate in which pixel electrodes are formed, a photo-conductive film stacked above the solid-state imaging element chip, and a transparent electrode formed above the photo-conductive film, wherein a drain for charge injection is further provided in or at one end of the pixel region of the substrate, the potential of the storage diode portion is set to a value almost equal to the potential of the element isolating region immediately before the accumulation of the signal charge, by injecting a specified amount of charge from the drain into the storage diode portion, and during the accumulation of the signal charge, the potential applied to the transparent electrode is set to a value higher than the potential of the storage diode portion set immediately before the accumulation of the signal charge, and the potential of the storage diode portion is made close to the potential of the element isolating layer and the substrate in the vicinity particularly in a case where the amount of incident light is small so that variations in dark current are conspicuous, by injecting holes of the carriers generated by the incident light in the photo-conductive film into the storage diode portion.
摘要翻译：一种FIT或IT固态成像装置，包括形成存储二极管部分，信号读出部分，n型CCD通道和p +型元件隔离区域的n型区域的p型Si衬底，在其上形成有像素电极的基板的顶部上的固态成像元件芯片，在固体摄像元件芯片上方堆叠的导电膜，以及形成在导电膜上方的透明电极，其中，电荷注入还设置在衬底的像素区域的一端或其一端，存储二极管部分的电位被设置为几乎等于信号电荷积累之前的元件隔离区的电位的值，将指定量的电荷从漏极注入存储二极管部分，并且在积累信号电荷期间，施加到透明电极的电位被设置为高于电位存储二极管部分在紧靠信号电荷的累积之前设置，并且使存储二极管部分的电位接近元件隔离层和基板附近的电位，特别是在入射光量为通过将由光入射光产生的载流子的空穴注入到存储二极管部分中，使得暗电流的变化明显。

16. 发明授权

US5438211A Charge-transfer device having an improved charge-sensing section 失效
标题翻译：电荷转移装置具有改进的电荷感测部分
公开(公告)号：US5438211A
公开(公告)日：1995-08-01
申请号：US220708
申请日：1994-03-31
申请人： Nobuo Nakamura , Yoshiyuki Matsunaga , Yoshihito Koya , Yukio Endo
发明人： Nobuo Nakamura , Yoshiyuki Matsunaga , Yoshihito Koya , Yukio Endo
IPC分类号： H01L29/768 , H01L29/78
CPC分类号： H01L29/76816 , H01L29/76841
摘要： A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
摘要翻译：电荷转移装置包含在n型半导体衬底的表面上形成的高电阻p阱层。在阱层的表面中连续地形成电荷传输n沟道层，电荷存储n沟道层，电荷释放n沟道层和电荷释放型n型漏极。输出栅电极设置在传输沟道层和存储沟道层的结的上方，隔着绝缘膜。在释放通道层上方设置有复位栅电极，其间具有绝缘膜。在存储通道层的表面形成电荷感测晶体管的电荷感应p沟道层。电荷感测沟道层被布置成与传输沟道层和释放通道层都不接触。存储通道层被布置成包含邻接传输沟道层并与覆盖绝缘膜接触的第一表面部分和与释放通道层相邻并与覆盖绝缘膜接触的第二表面部分。在基板的表面中，电荷感测晶体管的p型源极和漏极层形成为彼此面对，并且其间插入感测通道。没有电荷的存储通道层的电位被设定为高于释放漏极层的电位。

17. 发明授权

US6037577A Amplifying solid-state image pickup device and operating method of the same 失效
标题翻译：放大固态摄像装置及其操作方法
公开(公告)号：US6037577A
公开(公告)日：2000-03-14
申请号：US38039
申请日：1998-03-11
申请人： Yoriko Tanaka , Nobuo Nakamura , Natsue Sakaguchi , Yukio Endo , Yoshiyuki Matsunaga
发明人： Yoriko Tanaka , Nobuo Nakamura , Natsue Sakaguchi , Yukio Endo , Yoshiyuki Matsunaga
IPC分类号： H04N5/355 , H04N5/357 , H04N5/365 , H04N5/374 , H04N5/378 , H01J40/14
CPC分类号： H04N5/374 , H04N5/35536 , H04N5/357 , H04N5/3658 , H04N5/378
摘要： An amplifying solid-state image pickup device comprises an image pickup region formed by two-dimensionally arranging photosensitive cells, each of the photosensitive cells including photoelectric conversion means, signal charge storage means, signal charge ejection means, row select means, and amplification means on a semiconductor substrate, a plurality of vertical select lines arranged in the image pickup region in a row direction, vertical select means for driving the plurality of vertical select lines, a plurality of vertical signal lines arranged in the column direction to read the outputs of the amplification means, noise suppression means provided at the ends of the plurality of vertical signal lines to capture and deduct noises and signals appearing on the plurality of vertical signal lines at time differences, horizontal select lines arranged in a column direction, horizontal read means for relaying the outputs of the horizontal select lines and the noise suppression means, horizontal select means for driving the horizontal read means, and charge adding means for adding the signal charges read to the vertical signal lines.
摘要翻译：放大固态摄像装置包括通过二维布置感光单元形成的摄像区域，每个感光单元包括光电转换装置，信号电荷存储装置，信号电荷喷射装置，行选择装置和放大装置半导体衬底，沿行方向布置在摄像区域中的多个垂直选择线，用于驱动多个垂直选择线的垂直选择装置，沿列方向排列的多个垂直信号线，以读取第放大装置，设置在多个垂直信号线的端部处的噪声抑制装置，用于以时间差捕获和减去在多条垂直信号线上出现的噪声和信号，沿列方向布置的水平选择线，用于中继的水平读取装置水平选择线的输出和噪声抑制装置，ho 用于驱动水平读取装置的雷管选择装置和用于将读取的信号电荷相加于垂直信号线的充电添加装置。

18. 发明授权

US5418387A Solid-state imaging device with nand cell structure 失效
标题翻译：具有nand单元结构的固态成像装置
公开(公告)号：US5418387A
公开(公告)日：1995-05-23
申请号：US173081
申请日：1993-12-27
申请人： Nobuo Nakamura , Nahoko Endo , Yoshiyuki Matsunaga
发明人： Nobuo Nakamura , Nahoko Endo , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/369 , H04N5/372 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14893 , H01L27/14831
摘要： A solid-state imaging device includes a semiconductor substrate, an array of cells on the substrate, a plurality of vertical charge transfer sections extending in a first direction on the substrate, and a horizontal charge transfer section extending in a second direction transverse to the first direction on the substrate and being coupled to the vertical charge transfer section. The cell array includes a plurality of columns of cells that are associated with a corresponding one of the vertical transfer sections. The cell columns include a predetermined number of spaced-part cells that are series-connected along the second direction to constitute a NAND type cell structure. At least one cell-to-cell charge transfer electrode overlies a channel region as defined between adjacent ones of the NAND cells in the substrate.
摘要翻译：固态成像装置包括半导体衬底，衬底上的单元阵列，在衬底上沿第一方向延伸的多个垂直电荷转移部分以及横向于第一电极的第二方向延伸的水平电荷转移部分方向并且耦合到垂直电荷转移部分。单元阵列包括与相应的一个垂直传送部分相关联的多个单元格列。单元列包括沿着第二方向串联连接的预定数量的间隔部分单元，以构成NAND型单元结构。至少一个电池到电池转移电极覆盖在衬底中相邻的NAND单元之间限定的沟道区域。

19. 发明授权

US08319875B2 Imaging device that prevents loss of shadow detail 有权
标题翻译：防止阴影细节损失的成像设备
公开(公告)号：US08319875B2
公开(公告)日：2012-11-27
申请号：US13007033
申请日：2011-01-14
申请人： Masayuki Masuyama , Masashi Murakami , Yoshiyuki Matsunaga
发明人： Masayuki Masuyama , Masashi Murakami , Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/2351
摘要： An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
摘要翻译：一种成像装置根据入射光的量输出亮度信息，并且包括：成像单元，其包括一维或二维布置的多个单位单元，每个单元包括光电转换部分，该光电转换部分生成第一输出电压复位状态和第二输出电压，并且每个单元电池产生对应于第一输出电压的复位电压和对应于第二输出电压的读取电压; 以及输出单元，其可操作以相对于每个单位单元输出指示当正常光入射到所述成像装置并且所述读取电压处于预定范围时所述复位电压和所述读取电压之间的差的亮度信息，以及亮度信息当强光入射到成像装置并且读取电压不在预定范围内时指示高亮度。

20. 发明授权

US08218289B2 Electrolytic capacitor and electric equipment provided therewith 失效
标题翻译：提供电解电容器和电气设备
公开(公告)号：US08218289B2
公开(公告)日：2012-07-10
申请号：US12694477
申请日：2010-01-27
申请人： Isao Abe , Kenichi Asami , Hajime Osaki , Yoshiyuki Matsunaga , Hideo Kozuka
发明人： Isao Abe , Kenichi Asami , Hajime Osaki , Yoshiyuki Matsunaga , Hideo Kozuka
IPC分类号： H01G9/08
CPC分类号： H01G9/12 , H01G9/08
摘要： An electrolytic capacitor includes: a case including a case body, in which an electrolytic capacitor element is disposed in a sealed manner and filled up with an electrolytic solution, and a safety valve is mounted to the case body for jetting an evaporated gas of the electrolytic solution filling the electrolytic capacitor element; a cover member mounted to the case so as to cover the safety valve provided for the case; a first fixing unit mounted to the cover member so as to prevent the cover member from dismounting when the evaporated gas of the electrolytic solution is jetted outward; and a second fixing unit disposed in association with the first fixing unit and adopted to reinforce and assist a function of the first fixing unit to thereby prevent the cover member from being dismounted. An electric equipment includes a lighting circuit including circuit components, and an electrolytic capacitor of the structure mentioned above.
摘要翻译：一种电解电容器包括：壳体，其具有电解电容器元件，其密封地设置有电解液，并且安装在壳体上，用于喷射电解液的蒸发气体溶液填充电解电容元件; 安装到所述壳体以覆盖为所述壳体提供的安全阀的盖构件; 第一固定单元，安装到所述盖构件，以便当所述电解液的蒸发气体向外喷射时防止所述盖构件的拆卸; 以及与第一固定单元相关联地设置的第二固定单元，并且用于加强和辅助第一固定单元的功能，从而防止盖构件的拆卸。电气设备包括具有电路部件的点灯电路和上述结构的电解电容器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式