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11. 发明申请

US20090246585A1 CELL STRUCTURE OF FUEL CELL AND FUEL CELL STACK 审中-公开
标题翻译：燃料电池和燃料电池堆的细胞结构
公开(公告)号：US20090246585A1
公开(公告)日：2009-10-01
申请号：US12095842
申请日：2007-08-24
申请人： Takao Kariya , Shuji Aoki , Akira Fujimoto
发明人： Takao Kariya , Shuji Aoki , Akira Fujimoto
IPC分类号： H01M8/10
CPC分类号： H01M8/0271 , H01M8/248 , H01M2008/1095
摘要： There is provided a cell structure of a fuel cell which does not require a bolt, a seal member, or the like for fastening components of the fuel cell by a staked body, which can apply a stable fastening pressure to the entire surfaces of the components to reduce a contact resistance, and which can realize the down-sizing of the fuel cell; and a fuel cell stack. A cell structure of a fuel cell includes: a fuel cell component including at least an electrolyte membrane having reaction layers formed on both surfaces thereof and a member for allowing gas to diffuse and collecting current at a time of power generation; and an electrode substrate for taking out electric power, on which the fuel cell component is stacked, wherein the electrode substrate includes, as a structural portion for applying a surface pressure to the fuel cell component, a flow path or a closed space which is formed in the electrode substrate, for applying the surface pressure by allowing a fuel gas to flow in the flow path or the closed space.
摘要翻译：提供了一种燃料电池的电池结构，其不需要用于通过铆接体来固定燃料电池的部件的螺栓，密封构件等，其可以对部件的整个表面施加稳定的紧固压力降低接触电阻，能够实现燃料电池的小型化; 和燃料电池堆。燃料电池的电池结构包括：燃料电池组件，至少包括在其两个表面上形成有反应层的电解质膜和用于在发电时允许气体扩散和收集电流的构件; 以及用于取出燃料电池部件堆叠的电力的电极基板，其中，所述电极基板具有作为向所述燃料电池部件施加表面压力的结构部，形成有流路或封闭空间在电极基板中，通过允许燃料气体在流路或封闭空间中流动来施加表面压力。

12. 发明申请

US20090042325A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090042325A1
公开(公告)日：2009-02-12
申请号：US12246099
申请日：2008-10-06
申请人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
发明人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
IPC分类号： H01L21/02
CPC分类号： H01L33/22
摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.
摘要翻译：在半导体发光器件中，半导体发光元件具有在其上形成有多个凸起结构的光提取表面。凸起结构各自具有构成折射率梯度结构的圆锥台面部分，构成衍射光栅结构的圆筒部分和构成折射率梯度结构的锥形部分。台面部分，圆柱形部分和锥形部分从光提取表面依次排列。凸结构之间的周期长于发射波长的1 /（外部介质的折射率+凸起结构的折射率）等于或小于发射波长。圆筒部的圆当量平均直径为台面部的底部的圆当量平均直径的1/3〜9/10。

13. 发明申请

US20050233483A1 Method of manufacturing semiconductor device, acid etching resistance material and copolymer 有权
标题翻译：制造半导体器件的方法，耐酸蚀材料和共聚物
公开(公告)号：US20050233483A1
公开(公告)日：2005-10-20
申请号：US11056094
申请日：2005-02-14
申请人： Koji Asakawa , Kenichi Ohashi , Akira Fujimoto , Takashi Sasaki
发明人： Koji Asakawa , Kenichi Ohashi , Akira Fujimoto , Takashi Sasaki
IPC分类号： C08F220/28 , H01L21/00 , H01L21/306 , H01L21/308 , H01L21/78 , H01L33/22
CPC分类号： H01L21/78 , C08F220/28 , H01L21/30608 , H01L21/3081 , H01L21/67086 , H01L33/22
摘要： Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
摘要翻译：公开了一种耐酸腐蚀性材料，其包含具有由以下通式（1）表示的重复单元的化合物：（在通式（1）中，R 1是氢原子或甲基; R 3是选自脂环族基团和芳族基团的环状基团; R 4是极性基团; R 2是代表的基团由通式（2）表示，j为0或1）:(通式（2）中，R 5为氢原子或甲基）。

14. 发明申请

US20050034821A1 METHOD AND APPARATUS FOR SEPARATING MEMBER 失效
标题翻译：分离会员的方法和装置
公开(公告)号：US20050034821A1
公开(公告)日：2005-02-17
申请号：US10944864
申请日：2004-09-21
申请人： Kazutaka Yanagita , Mitsuharu Kohda , Kiyofumi Sakaguchi , Akira Fujimoto
发明人： Kazutaka Yanagita , Mitsuharu Kohda , Kiyofumi Sakaguchi , Akira Fujimoto
IPC分类号： H01L21/762 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , B32B1/00 , B32B31/00
CPC分类号： H01L21/67092 , Y10S156/937 , Y10T83/364 , Y10T156/1137 , Y10T156/19 , Y10T156/1906 , Y10T156/1939
摘要： This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.
摘要翻译：本发明是为了适当地分离键合衬底叠层而不管键合衬底叠层等中的某些变形。这种分离装置包括形成大宽度射流的第一喷嘴和形成小宽度的射流的第二喷嘴。当键合衬底叠层的外部部分被分离时，使用由第一喷嘴形成的射流。此后，当外部部分内的部分被分离时，使用由第二喷嘴形成的射流。

15. 发明授权

US08754431B2 Light emitting device with an electrode having a through-holes 有权
标题翻译：具有带有通孔的电极的发光器件
公开(公告)号：US08754431B2
公开(公告)日：2014-06-17
申请号：US13412044
申请日：2012-03-05
申请人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
发明人： Akira Fujimoto , Tsutomu Nakanishi , Ryota Kitagawa , Kenji Nakamura , Shinji Nunotani , Takanobu Kamakura
IPC分类号： H01L33/00 , H01L33/38 , H01L33/30 , H01L33/10
CPC分类号： H01L33/30 , H01L33/10 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。第一电极层具有具有通孔的金属部分。第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。发光层设置在第一和第二半导体层之间。第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

16. 发明申请

US20130135746A1 ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE 有权
公开(公告)号：US20130135746A1
公开(公告)日：2013-05-30
申请号：US13723374
申请日：2012-12-21
申请人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
发明人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
IPC分类号： G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.

17. 发明授权

US08450768B2 Semiconductor light-emitting element and process for production thereof 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08450768B2
公开(公告)日：2013-05-28
申请号：US13335984
申请日：2011-12-23
申请人： Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
发明人： Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译：本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。放置在光提取侧的电极层包括金属部分和多个开口。金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于从活性层发射的光的1/3。平均开口直径为发射光波长的10nm至1/3。电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

18. 发明授权

US08357557B2 Semiconductor light-emitting device and process for production thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08357557B2
公开(公告)日：2013-01-22
申请号：US12717537
申请日：2010-03-04
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
IPC分类号： H01L33/54
CPC分类号： H01L33/22 , H01L33/005
摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
摘要翻译：本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。然后在程序之后最后形成电极。该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

19. 发明申请

US20120187414A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120187414A1
公开(公告)日：2012-07-26
申请号：US13439895
申请日：2012-04-05
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
IPC分类号： H01L33/22 , H01L33/30
CPC分类号： H01L33/22 , H01L33/005
摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
摘要翻译：本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。然后在程序之后最后形成电极。该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

20. 发明申请

US20120097640A1 RESIN COMPOSITION FOR PATTERN FORMATION, PATTERN FORMATION METHOD AND PROCESS FOR PRODUCING LIGHT-EMITTING ELEMENT 有权
标题翻译：图案形成树脂组合物，图案形成方法和生产发光元件的方法
公开(公告)号：US20120097640A1
公开(公告)日：2012-04-26
申请号：US13319928
申请日：2010-05-12
申请人： Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Yoshiaki Shirae , Tomohiro Yorisue , Akihiko Ikeda
发明人： Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Yoshiaki Shirae , Tomohiro Yorisue , Akihiko Ikeda
IPC分类号： C03C25/68 , C08L33/12 , C08K5/101 , B05D5/06 , C08K5/1535 , C08K5/07 , C08L25/06 , C08L53/00 , C08K5/3415
CPC分类号： C08L33/06 , C08F220/14 , C08F297/02 , C08L25/06 , C08L35/06 , C08L53/00 , C08L2205/03 , G03F7/0002 , H01L2933/0091 , C08L2666/02 , C08F212/08
摘要： Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight.
摘要翻译：公开了一种用于图案形成的树脂组合物，其能够在光的波长水平上稳定地形成图案; 使用该组合物形成具有海岛结构的图案的方法; 以及能够实现高发光效率的发光元件的制造方法。用于图案形成的树脂组合物包括：（a）含有含芳环的聚合物和聚（甲基）丙烯酸酯作为嵌段部分的特定嵌段共聚物; （b）特定含芳环聚合物的均聚物; 和（c）特定聚（甲基）丙烯酸酯的均聚物，其中所述含芳环的均聚物（b）和聚（甲基）丙烯酸酯均聚物（c）的总量相对于整个树脂组合物的比例为 0重量％〜90重量％，作为嵌段部分的嵌段共聚物（a）中含有的含芳香环的聚合物部分和含芳环的均聚物（b）相对于树脂组合物的总量为10重量％〜60重量％。

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