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11. 发明授权

US09444052B2 Charge-transporting varnish 有权
标题翻译：电荷输送清漆
公开(公告)号：US09444052B2
公开(公告)日：2016-09-13
申请号：US14346115
申请日：2012-09-14
申请人： Naoki Nakaie , Yoshiomi Hiroi , Minoru Hoshino
发明人： Naoki Nakaie , Yoshiomi Hiroi , Minoru Hoshino
IPC分类号： C09D5/24 , H01L51/00 , H01L51/50 , H01L51/52 , C09D7/12 , C08K5/18 , C08K5/42
CPC分类号： H01L51/0059 , C08K5/18 , C08K5/42 , C09D5/24 , C09D7/63 , H01L51/0021 , H01L51/5056 , H01L51/5088 , H01L51/5237 , H01L51/524
摘要： This charge-transporting varnish, which contains a solvent, an electron-accepting dopant substance, and an aryldiamine compound represented by formula (1), imparts a charge-transporting thin film that has high transparency and can evince favorable element characteristics when applied to an organic EL element. (In the formula: R1-R4 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a thiol group, a phosphate group, a sulfone group, a carboxyl group, an alkoxy group having 1-20 carbon atoms, or the like; R5-R8 each independently represent a hydrogen atom, a phenyl group, a naphthyl group, a pyridyl group, a pyrimidinyl group, a pyridazinyl group, a pyrazinyl group, a furanyl group, a pyrrolyl group, a pyrazolyl group, an imidazolyl group, a thienyl group, or the like; and n represents an integer from 2 to 5.)

12. 发明申请

US20100266951A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：电阻膜形成组合物和形成电阻图案的方法
公开(公告)号：US20100266951A1
公开(公告)日：2010-10-21
申请号：US12747039
申请日：2008-12-09
申请人： Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
发明人： Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , C08G59/226 , C08G59/38
摘要： There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，其具有大的干蚀刻速率选择比，在短波长下显示k值和折射率n的期望值，例如在ArF准分子激光器中，此外，具有耐溶剂性。用于光刻的抗蚀剂下层膜形成组合物包括在主链中具有含芳环结构和含氮原子的结构中的至少一种的线性聚合物; 和溶剂，其中至少一个烷氧基烷基或羟烷基直接与芳环或氮原子结合。

13. 发明授权

US07790356B2 Condensation type polymer-containing anti-reflective coating for semiconductor 有权
标题翻译：用于半导体的冷凝型聚合物抗反射涂层
公开(公告)号：US07790356B2
公开(公告)日：2010-09-07
申请号：US11547001
申请日：2005-04-06
申请人： Takahiro Kishioka , Rikimaru Sakamoto , Yoshiomi Hiroi , Daisuke Maruyama
发明人： Takahiro Kishioka , Rikimaru Sakamoto , Yoshiomi Hiroi , Daisuke Maruyama
IPC分类号： G03F7/11 , C08L79/04 , C09D163/00 , C09D179/04 , H01L21/027
CPC分类号： C08G73/0616 , C08G61/122 , C08G61/123 , C08G73/0638 , C08L79/04 , G02B1/111 , G03F7/091 , Y10S438/952
摘要： There is provided an anti-reflective coating forming composition comprising a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as ArF excimer laser beam (wavelength 193 nm) or F2 excimer laser beam (wavelength 157 nm), etc.
摘要翻译：提供了包含具有嘧啶四酮结构的聚合物，咪唑烷二酮结构，咪唑烷四酮结构或三嗪三酮结构的抗反射涂层形成组合物和溶剂。由组合物得到的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，并且可以在光刻工艺中使用具有短波长的光，例如ArF准分子激光束（波长193nm）或F2准分子激光束（波长157nm）等

14. 发明申请

US20090217759A1 Method of Determining Sublimate in Thermoset Film with Qcm Sensor 有权
标题翻译：用Qcm传感器测定热固性薄膜的升华方法
公开(公告)号：US20090217759A1
公开(公告)日：2009-09-03
申请号：US12225474
申请日：2007-03-15
申请人： Yoshiomi Hiroi
发明人： Yoshiomi Hiroi
IPC分类号： G01H13/00
CPC分类号： G01N5/02 , G01G3/13 , G01G3/16 , G01N29/022 , G01N29/036 , G01N2291/0254 , G01N2291/0256 , G01N2291/0426
摘要： A method for measuring an amount of a sublimate in real time with respect to a lapse of heating time, comprising: adhering the sublimate from a thermoset film during heating to a surface of a crystal oscillator using a nozzle inserted into a detection part; and measuring the amount of the sublimate from a change in a resonance frequency corresponding to the amount of the sublimate adhered to the crystal oscillator. In the method, the thermoset film may be formed on a silicon wafer and the measurement is performed while the thermoset film is heated by a heat source disposed under the silicon wafer; or the sublimate may be set so as to flow together with an airstream ascending toward an upper part of an enclosure covering the thermoset film, and the airstream directly contacts the crystal oscillator through the nozzle inserted into the detection part disposed in the path of the airstream.
摘要翻译：一种用于相对于经过的加热时间实时测量升华量的方法，包括：使用插入到检测部分中的喷嘴将加热期间的热固性薄膜的升华粘附到晶体振荡器的表面; 并且根据与粘附到晶体振荡器的升华量对应的共振频率的变化来测量升华量。在该方法中，可以在硅晶片上形成热固性膜，并且在通过设置在硅晶片下方的热源对热固性膜进行加热的同时进行测量; 或者升华装置可以被设置成与覆盖住热固性膜的外壳的上部上升的气流一起流动，气流通过插入到设置在气流路径中的检测部分中的喷嘴直接接触晶体振荡器。

15. 发明授权

US09340561B2 Organic silicon compound and silane coupling agent containing the same 有权
标题翻译：有机硅化合物和含硅烷偶联剂
公开(公告)号：US09340561B2
公开(公告)日：2016-05-17
申请号：US14345002
申请日：2012-08-28
申请人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
发明人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
IPC分类号： C07F7/08 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , C09D5/16 , C07F7/18
CPC分类号： C07F7/081 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , A61L2300/424 , C07F7/1804 , C09D5/1625
摘要： There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要翻译：提供了可用于硅烷偶联剂的新型有机硅化合物。式（1）的有机硅化合物：其中A-是式（2）或式（3）：E是式（4）或式（5）：R 1和R 2各自独立地为C 1-5烷基， R3是氢原子或甲基，R4和R5各自独立地为C1-5烷基，m，n和p各自独立地为1〜5的整数，q为1〜3的整数）。

16. 发明申请

US20140370182A1 ORGANIC SILICON COMPOUND AND SILANE COUPLING AGENT CONTAINING THE SAME 有权
标题翻译：有机硅化合物和含有它们的硅烷偶联剂
公开(公告)号：US20140370182A1
公开(公告)日：2014-12-18
申请号：US14345002
申请日：2012-08-28
申请人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
发明人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
IPC分类号： C07F7/08 , C09D5/16
CPC分类号： C07F7/081 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , A61L2300/424 , C07F7/1804 , C09D5/1625
摘要： There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要翻译：提供了可用于硅烷偶联剂的新型有机硅化合物。式（1）的有机硅化合物：其中A-是式（2）或式（3）：E是式（4）或式（5）：R 1和R 2各自独立地为C 1-5烷基， R3是氢原子或甲基，R4和R5各自独立地为C1-5烷基，m，n和p各自独立地为1〜5的整数，q为1〜3的整数）。

17. 发明授权

US08383320B2 Resist underlayer film forming composition and method of forming resist pattern using the same 有权
标题翻译：抗蚀剂下层成膜组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US08383320B2
公开(公告)日：2013-02-26
申请号：US12682819
申请日：2008-10-16
申请人： Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
发明人： Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
IPC分类号： G03F7/11 , G03F7/20 , C08G59/14 , H01L21/027
CPC分类号： C08G63/664 , C08G59/1438 , C08L63/00 , G03F7/091
摘要： There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，其不仅具有大的干蚀刻速率选择比，而且在短波长（如ArF准分子的波长）下表现出k值和折射率n的期望值激光。一种用于光刻的抗蚀剂下层膜形成组合物，包括：线性聚合物; 和溶剂，其中线性聚合物的主链具有通过酯键和醚键引入2,4-二羟基苯甲酸的单元结构。

18. 发明授权

US07861590B2 Method of determining sublimate in thermoset film with QCM sensor 有权
标题翻译：用QCM传感器测定热固性薄膜的升华方法
公开(公告)号：US07861590B2
公开(公告)日：2011-01-04
申请号：US12225474
申请日：2007-03-15
申请人： Yoshiomi Hiroi
发明人： Yoshiomi Hiroi
IPC分类号： G01H13/00 , G01N25/02
CPC分类号： G01N5/02 , G01G3/13 , G01G3/16 , G01N29/022 , G01N29/036 , G01N2291/0254 , G01N2291/0256 , G01N2291/0426
摘要： A method for measuring an amount of a sublimate in real time with respect to a lapse of heating time, comprising: adhering the sublimate from a thermoset film during heating to a surface of a crystal oscillator using a nozzle inserted into a detection part; and measuring the amount of the sublimate from a change in a resonance frequency corresponding to the amount of the sublimate adhered to the crystal oscillator. In the method, the thermoset film may be formed on a silicon wafer and the measurement is performed while the thermoset film is heated by a heat source disposed under the silicon wafer; or the sublimate may be set so as to flow together with an airstream ascending toward an upper part of an enclosure covering the thermoset film, and the airstream directly contacts the crystal oscillator through the nozzle inserted into the detection part disposed in the path of the airstream.
摘要翻译：一种用于相对于经过的加热时间实时测量升华量的方法，包括：使用插入到检测部分中的喷嘴将加热期间的热固性薄膜的升华粘附到晶体振荡器的表面; 并且根据与粘附到晶体振荡器的升华量对应的共振频率的变化来测量升华量。在该方法中，可以在硅晶片上形成热固性膜，并且在通过设置在硅晶片下方的热源对热固性膜进行加热的同时进行测量; 或者升华装置可以被设置成与覆盖住热固性膜的外壳的上部上升的气流一起流动，气流通过插入到设置在气流路径中的检测部分中的喷嘴直接接触晶体振荡器。

19. 发明申请

US20100221657A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING THE SAME 有权
标题翻译：抗静电膜形成组合物及其形成耐力图案的方法
公开(公告)号：US20100221657A1
公开(公告)日：2010-09-02
申请号：US12682819
申请日：2008-10-16
申请人： Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
发明人： Rikimaru Sakamoto , Yoshiomi Hiroi , Tomohisa Ishida , Takafumi Endo
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C08G63/664 , C08G59/1438 , C08L63/00 , G03F7/091
摘要： There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
摘要翻译：提供了一种用于形成抗蚀剂下层膜的组合物，其不仅具有大的干蚀刻速率选择比，而且在短波长（如ArF准分子的波长）下表现出k值和折射率n的期望值激光。一种用于光刻的抗蚀剂下层膜形成组合物，包括：线性聚合物; 和溶剂，其中线性聚合物的主链具有通过酯键和醚键引入2,4-二羟基苯甲酸的单元结构。

20. 发明申请

US20090317740A1 Composition containing hydroxylated condensation resin for forming resist underlayer film 有权
标题翻译：含羟基化缩合树脂的组合物，用于形成抗蚀剂下层膜
公开(公告)号：US20090317740A1
公开(公告)日：2009-12-24
申请号：US12308566
申请日：2007-06-15
申请人： Yoshiomi Hiroi , Takahiro Kishioka , Rikimaru Sakamoto
发明人： Yoshiomi Hiroi , Takahiro Kishioka , Rikimaru Sakamoto
IPC分类号： G03F7/004 , C08L61/00 , C08L67/02 , G03F7/20
CPC分类号： G03F7/091 , C08G63/19 , C08G63/672 , C08G63/6856 , G03F7/094 , G03F7/11
摘要： Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.
摘要翻译：公开了一种用于形成抗蚀剂下层膜的光刻组合物，其可以用作下层抗反射膜，通过该下反射膜，在制造的光刻工艺中抑制了形成在半导体衬底上的形成在光致抗蚀剂上的曝光光从衬底反射半导体设备，用于平坦化半导体衬底的平坦化膜，其具有用于填充形成在半导体衬底上的孔的凹凸表面的半导体衬底，防止在加热/燃烧期间由光致抗蚀剂被半导体衬底产生的物质污染的膜，等等。用于形成抗蚀剂底层的平版印刷组合物包含具有式（1）结构的聚合物：（其中Y表示C1-10亚烷基或C6-14芳香环，条件是亚烷基和芳环具有一个或多个更多的羟基不大于亚烷基和芳环的可置换氢原子的数目）; 和溶剂。

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