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11. 发明授权

US07045820B2 Light emitting device having a sensor for determining luminous intensity 有权
标题翻译：具有用于确定发光强度的传感器的发光装置
公开(公告)号：US07045820B2
公开(公告)日：2006-05-16
申请号：US10085607
申请日：2002-02-27
申请人： Kazuhiko Hayashi , Takashi Fukuchi , Shinnzo Tsuboi
发明人： Kazuhiko Hayashi , Takashi Fukuchi , Shinnzo Tsuboi
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , G09G2320/045 , G09G2360/148 , H01L25/167 , H01L27/3211 , H01L27/3269 , H01L2924/0002 , H05B33/08 , H05B33/0896 , H01L2924/00
摘要： A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light emitting element. The light emitting element includes a lower electrode, a light emitting material layer including at least a light emitting layer, and an upper electrode having light transparency, which are formed on a substrate in the named order. One of the lower electrode and the upper electrode acts as a cathode, and the other acts as an anode. The light sensor is formed on the light emitting element.Thus, it is possible to provide the light emitting device so configured to sufficiently prevent the unevenness of luminance and the deterioration in color balance, and to efficiently guide the light emitted from the light emitting element to the light sensor, so as to enable to detect the luminous intensity of the emitted light with high sensitiveness, with a minimized adverse mutual influence between the light emitting element and the light sensor.
摘要翻译：根据本发明的发光器件包括发光元件和用于检测从发光元件发射的光的发光强度的光传感器。发光元件包括下电极，至少包括发光层的发光材料层和具有透光性的上电极，其以所述顺序形成在基板上。下电极和上电极中的一个用作阴极，另一个用作阳极。光传感器形成在发光元件上。因此，可以提供如此构造的发光器件，以充分防止亮度的不均匀性和色平衡的劣化，并且有效地将从发光元件发射的光引导到光传感器，以便能够检测具有高灵敏度的发射光的发光强度，发光元件和光传感器之间的不利相互影响最小化。

12. 发明授权

US06674615B2 Magneto-resistance effect head and magnetic storage device employing the head 失效
标题翻译：使用磁头的磁阻效应磁头和磁存储装置
公开(公告)号：US06674615B2
公开(公告)日：2004-01-06
申请号：US09734615
申请日：2000-12-13
申请人： Kazuhiko Hayashi
发明人： Kazuhiko Hayashi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A magneto-resistance effect head (MR head) is provided, wherein a lower electrode-cum-magnetic shield layer is provided on a substrate, a magnetic gap adjusting layer is provided thereon, a magneto-resistance effect element (MR element) is provided on the magnetic gap adjusting layer, and an upper electrode-cum-magnetic shield layer is provided on the MR element. A pair of vertical bias layers is provided at both sides of the MR element. In the MR element, a lower layer, a free magnetic layer, a nonmagnetic layer, a fixed magnetic layer, and a fixing layer are provided in order from the magnetic gap adjusting layer side. By providing the magnetic gap adjusting layer between the lower electrode-cum-magnetic shield layer and the free magnetic layer, the free magnetic layer can be made to be sufficiently separate from the lower electrode-cum-magnetic shield layer. Thereby, since a sufficient leak magnetic field can be applied to the free magnetic layer, the head reproduction output is improved.
摘要翻译：提供一种磁阻效应头（MR磁头），其中在基片上设置下电极和磁屏蔽层，在其上提供磁隙调节层，提供磁阻效应元件（MR元件）并且在MR元件上设置上电极和磁屏蔽层。在MR元件的两侧设有一对垂直偏置层。在MR元件中，从磁隙调整层侧开始依次设置下层，自由磁性层，非磁性层，固定磁性层和固定层。通过在下电极暨磁屏蔽层和自由磁性层之间设置磁隙调节层，可以使自由磁性层与下电极暨磁屏蔽层充分分离。因此，由于可以向自由磁性层施加足够的泄漏磁场，所以磁头重放输出得到改善。

13. 发明授权

US06538861B1 MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT 有权
标题翻译：具有终端部分的电阻较小的中央部分，具有磁阻头的磁阻电阻检测系统和使用其的磁性存储系统的磁致伸缩膜
公开(公告)号：US06538861B1
公开(公告)日：2003-03-25
申请号：US09597458
申请日：2000-06-19
申请人： Kazuhiko Hayashi , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Kunihiko Ishihara , Tamaki Toba , Hisanao Tsuge , Atsushi Kamijo
发明人： Kazuhiko Hayashi , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjou , Kunihiko Ishihara , Tamaki Toba , Hisanao Tsuge , Atsushi Kamijo
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , H01F10/3254
摘要： A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion. Further, it is possible to attach re-adhesive substance, which is produced by milling for patterning of the ferromagnetic tunnel junction film, to a specific terminal surface of the ferromagnetic tunnel junction film which is opposite to an ABS plane. Those measures provide a bypass allowing overcurrent release between the free layer and fixing layer. Moreover, adjustment milling or plasma oxidation is employed to control an amount of the re-adhesive substance being attached to the terminal surface of the ferromagnetic tunnel junction film. Thus, by adequately optimizing the amount of the re-adhesive substance, it is possible to improve yield in manufacturing the magnetoresistive heads.
摘要翻译：使用布置在下电极和上电极之间的铁磁隧道结（MTJ）膜来构造其磁阻效应的操作的磁阻头。铁磁隧道结膜基本上是使用一组自由层，阻挡层和固定层构成的，它们依次形成并层压在下电极上。这里，铁磁隧道结膜被设计成通过规定的措施避免制造中的静电破坏。例如，与中心部分相比，阻挡层在端子部分的厚度减小。或者，阻挡层在端子部分具有缺陷。此外，可以在其端子部分附近提供与阻挡层相关的导体。此外，可以将通过研磨制造的用于图案化铁磁性隧道结膜的再粘合物质附着到与ABS平面相反的铁磁性隧道结膜的特定末端表面。这些措施提供了允许在自由层和固定层之间过电流释放的旁路。此外，调整研磨或等离子体氧化被用于控制附着到铁磁性隧道结膜的终端表面上的再粘合物质的量。因此，通过充分优化再粘合物质的量，可以提高制造磁阻磁头的成品率。

14. 发明授权

US06469253B1 Oxide superconducting wire with stabilizing metal have none noble component 失效
标题翻译：具有不含贵金属的稳定金属的氧化物超导线
公开(公告)号：US06469253B1
公开(公告)日：2002-10-22
申请号：US08632229
申请日：1996-04-15
申请人： Nobuhiro Saga , Kazuhiko Hayashi , Kenichi Sato
发明人： Nobuhiro Saga , Kazuhiko Hayashi , Kenichi Sato
IPC分类号： H01B1200
CPC分类号： H01L39/143 , H01L39/248
摘要： The present invention relates to an oxide superconducting wire. The wire has a filament made essentially of an oxide superconductor, and a stabilizing metal covering the oxide superconductor. The stabilizing metal includes a silver alloy having at least either higher mechanical strength or higher specific electrical resistance than that of silver. In one embodiment, the stabilizing metal further includes a first portion directly covering the oxide superconductor and a second portion covering the first portion. The first portion is adapted to prevent the component of the second portion from diffusing into and reacting with the oxide superconductor. The first and second portions have different materials, and the first portion is made essentially of an Ag—Sb alloy. In another embodiment, the stabilizing metal further has a first portion directly covering the oxide superconductor, a second portion covering the first portion and a third portion covering the second portion. The first portion is made essentially of silver or Ag—Sb alloy. The second portion is made essentially of silver or Ag—Sb alloy. The third portion has a different material with respect to the second portion.
摘要翻译：本发明涉及一种氧化物超导线。导线具有基本上由氧化物超导体制成的长丝和覆盖氧化物超导体的稳定金属。稳定金属包括具有比银更高的机械强度或更高的比电阻的银合金。在一个实施例中，稳定金属还包括直接覆盖氧化物超导体的第一部分和覆盖第一部分的第二部分。第一部分适于防止第二部分的部件扩散到氧化物超导体中并与氧化物超导体反应。第一和第二部分具有不同的材料，第一部分基本上由Ag-Sb合金制成。在另一个实施例中，稳定金属还具有直接覆盖氧化物超导体的第一部分，覆盖第一部分的第二部分和覆盖第二部分的第三部分。第一部分基本上由银或Ag-Sb合金制成。第二部分基本上由银或Ag-Sb合金制成。第三部分相对于第二部分具有不同的材料。

15. 发明授权

US06452762B1 Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus 失效
标题翻译：磁阻元件及其制造方法，磁阻头和磁记录/重放装置
公开(公告)号：US06452762B1
公开(公告)日：2002-09-17
申请号：US09535742
申请日：2000-03-27
申请人： Kazuhiko Hayashi , Masafumi Nakada
发明人： Kazuhiko Hayashi , Masafumi Nakada
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first magnetic layer; and a second magnetic layer 2 arranged to be in contact with the non-magnetic layer; wherein sense current flowing in the first and the second magnetic layer is changed by a resistance change according to an external magnetic field, and a sense current flowing distance in the first magnetic layer and/or a sense current flowing distance in the second magnetic layer is longer than a sense current flowing distance in a superimposed portion of the first magnetic layer, the non-magnetic layer, and the second magnetic layer.
摘要翻译：本发明提供了一种磁阻（MR）元件，包括：设置在基板上的第一磁性层1; 布置成与第一磁性层接触的非磁性层3; 以及布置成与非磁性层接触的第二磁性层2; 其中在第一和第二磁性层中流动的感测电流根据外部磁场的电阻变化而改变，并且第二磁性层中的第一磁性层中的感测电流流动距离和/或感测电流流动距离为比在第一磁性层，非磁性层和第二磁性层的叠加部分中的感测电流流动距离长。

16. 发明授权

US06403820B1 Process for preparing low-acid-value phosphoric esters 有权
标题翻译：制备低酸值磷酸酯的方法
公开(公告)号：US06403820B1
公开(公告)日：2002-06-11
申请号：US09762566
申请日：2001-02-08
申请人： Kazuhiko Hayashi , Tetsuo Kamimoto , Hisashi Murase , Ryoji Kimura
发明人： Kazuhiko Hayashi , Tetsuo Kamimoto , Hisashi Murase , Ryoji Kimura
IPC分类号： C07F902
CPC分类号： C07F9/025 , C07F9/12
摘要： The process for producing a low acid value phosphoric ester of the present invention is characterized by comprising treating a phosphoric ester having an acid value with an organic ortho-acid ester. The phosphoric ester preferably has a specific structure. The organic ortho-acid ester is preferably an ester of orthoformic acid, orthoacetic acid or orthopropionic acid with an alkyl group having 1 to 4 carbon atoms.
摘要翻译：本发明的低酸值磷酸酯的制造方法的特征在于，使用有机原酸酯处理具有酸值的磷酸酯。磷酸酯优选具有特定结构。有机原酸酯优选为具有1至4个碳原子的烷基的正己酸，原乙酸或邻丙酸的酯。

17. 发明授权

US06063491A Magnetoresistance effects film 失效
标题翻译：磁阻效应胶片
公开(公告)号：US06063491A
公开(公告)日：2000-05-16
申请号：US38093
申请日：1998-03-11
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/18 , H01F10/28 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： H01L43/08 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要翻译：本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜的薄磁性膜，薄的非磁性膜被插入其间。由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。超晶格结构中的原子数相对于Co的比例设定为1.0以上。即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。

18. 发明授权

US6025653A Engine start control device 有权
标题翻译：发动机启动控制装置
公开(公告)号：US6025653A
公开(公告)日：2000-02-15
申请号：US172624
申请日：1998-10-15
申请人： Kazuhiko Hayashi , Satoru Matsumoto
发明人： Kazuhiko Hayashi , Satoru Matsumoto
IPC分类号： B60R25/04 , B60R25/045 , B60R25/24 , F02N15/10 , G07C9/00 , G09C1/00 , H04L9/32 , G08G1/123
CPC分类号： F02N15/10 , B60R25/04 , G07C9/00309
摘要： In an engine start control device useful as a vehicle robbery prevention device, a reference code is stored in EEPROM (20a) of an immobilizer ECU (20), and a processor (20b) compares a key code transmitted from a transponder (12) of a key (10) with the reference code. Subsequently, in case of an inconsistency, a signal L is transmitted to an engine ECU (24) to stop an engine (30), but when the collation is not completed or when another communication is not performed, the immobilizer ECU (20) transmits to the engine ECU (24) a start code encoded in an encoder (20c). The engine ECU (24) decodes the start code by a decoder (24b) to recognize it. Subsequently, if the start code cannot be recognized, the engine (30) is stopped. Thereby, in a case where a communication line connecting the immobilizer ECU (20) and the engine ECU (24) is disconnected, the engine (30) can be stopped.
摘要翻译：在作为车辆防盗装置有用的发动机起动控制装置中，将参考码存储在防盗器ECU（20）的EEPROM（20a）中，并且处理器（20b）将从发送应答器（12）发送的密钥代码具有参考代码的键（10）。随后，在不一致的情况下，将信号L发送到发动机ECU（24）以停止发动机（30），但是当对照未完成或未执行另一通信时，防盗器ECU（20）发送到发动机ECU（24）中编码在编码器（20c）中的起始代码。发动机ECU（24）通过解码器（24b）解码起始码，以识别它。随后，如果起动码无法识别，则发动机30被停止。因此，在连接防盗用ECU（20）和发动机ECU（24）的通信线路断开的情况下，能够停止发动机（30）。

19. 发明授权

US06001430A Magnetoresistance effect film and production process thereof 失效
公开(公告)号：US06001430A
公开(公告)日：1999-12-14
申请号：US166896
申请日：1998-10-06
申请人： Jun-ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
发明人： Jun-ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3272 , G11B2005/3996
摘要： A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc.sub.2 of the other ferromagnetic thin film.

20. 发明授权

US5766743A Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device 失效
公开(公告)号：US5766743A
公开(公告)日：1998-06-16
申请号：US656921
申请日：1996-06-03
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara , Masafumi Nakada
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01F41/30 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/3268 , H01F41/304 , Y10S428/90 , Y10T428/1121 , Y10T428/24942 , Y10T428/265 , Y10T428/31678
摘要： Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2

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