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11. 发明授权

US09209029B2 Asymmetrical gate MOS device and method of making 有权
标题翻译：非对称栅MOS器件及其制作方法
公开(公告)号：US09209029B2
公开(公告)日：2015-12-08
申请号：US14113705
申请日：2011-12-28
申请人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
发明人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
IPC分类号： H01L21/336 , H01L21/28 , H01L21/285 , H01L29/04 , H01L29/66 , H01L29/78 , H01L29/49 , H01L21/265
CPC分类号： H01L21/28008 , H01L21/26586 , H01L21/28097 , H01L21/28105 , H01L21/2815 , H01L21/28518 , H01L29/04 , H01L29/4975 , H01L29/66575 , H01L29/6659 , H01L29/66659 , H01L29/7835
摘要： An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented.
摘要翻译：公开了一种非对称门MOS器件。栅极是金属栅极，金属栅极在源极侧与MOS器件的漏极侧具有不同的功函，使得MOS器件的整体性能参数更加优化。还公开了制造不对称栅极MOS器件的方法。在该方法中，将掺杂剂离子注入到MOS器件的栅极中，以使栅极在源极侧与MOS器件的漏极侧上具有不同的功函数。结果，MOS器件的整体性能参数更加优化。该方法可以很容易地实现。

12. 发明申请

US20140048875A1 Asymmetrical Gate MOS Device and Method of Making 有权
标题翻译：非对称门MOS器件及制作方法
公开(公告)号：US20140048875A1
公开(公告)日：2014-02-20
申请号：US14113705
申请日：2011-12-28
申请人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
发明人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L21/28008 , H01L21/26586 , H01L21/28097 , H01L21/28105 , H01L21/2815 , H01L21/28518 , H01L29/04 , H01L29/4975 , H01L29/66575 , H01L29/6659 , H01L29/66659 , H01L29/7835
摘要： An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented.
摘要翻译：公开了一种非对称门MOS器件。栅极是金属栅极，金属栅极在源极侧与MOS器件的漏极侧具有不同的功函，使得MOS器件的整体性能参数更加优化。还公开了制造不对称栅极MOS器件的方法。在该方法中，将掺杂剂离子注入到MOS器件的栅极中，以使栅极在源极侧与MOS器件的漏极侧上具有不同的功函数。结果，MOS器件的整体性能参数更加优化。该方法可以很容易地实现。

13. 发明申请

US20140034955A1 Nano-MOS Devices and Method of Making 审中-公开
标题翻译：纳米MOS器件及其制造方法
公开(公告)号：US20140034955A1
公开(公告)日：2014-02-06
申请号：US13519315
申请日：2011-10-31
申请人： Dongping Wu , Cheng Hu , Luo Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
发明人： Dongping Wu , Cheng Hu , Luo Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
IPC分类号： H01L21/285 , H01L29/04 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/41
CPC分类号： H01L21/28518 , H01L21/28097 , H01L21/2815 , H01L21/28255 , H01L21/28264 , H01L21/32053 , H01L29/04 , H01L29/413 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/4975 , H01L29/66477 , H01L29/66575 , H01L29/78
摘要： The present invention discloses a method of making nano-MOS devices having a metal gate, thereby avoiding the poly depletion effect, and enhancing the MOS device's performance. The method forms metal gates by depositing a metal film over sidewall surfaces on two sides of a polycrystalline semiconductor layer. The metal in the metal film diffuses toward the sidewall surfaces of the polycrystalline semiconductor layer and forms, after annealing, metal-semiconductor compound nanowires (i.e., metal gates) on the sidewall surfaces of the polycrystalline semiconductor layer. Thus, high-resolution lithography is not required to form metal compound semiconductor nanowires, resulting in significant cost saving. At the same time, a nano-MOS device is also disclosed, which includes a metal gate, thereby avoiding the poly depletion effect, and resulting in enhanced MOS device performance.
摘要翻译：本发明公开了一种制造具有金属栅极的纳米MOS器件的方法，从而避免多晶硅耗尽效应，并提高MOS器件的性能。该方法通过在多晶半导体层的两侧上的侧壁表面上沉积金属膜来形成金属栅极。金属膜中的金属向多晶半导体层的侧壁表面扩散，并且在多晶半导体层的侧壁表面上退火后形成金属 - 半导体化合物纳米线（即，金属栅极）。因此，不需要高分辨率光刻来形成金属化合物半导体纳米线，导致显着的成本节省。同时，还公开了一种纳米MOS器件，其包括金属栅极，从而避免多晶硅耗尽效应，并且导致增强的MOS器件性能。

14. 发明申请

US20140008710A1 Metal/Semiconductor Compound Thin Film and a DRAM Storage Cell and Method of Making 审中-公开
标题翻译：金属/半导体复合薄膜和DRAM存储单元及其制造方法
公开(公告)号：US20140008710A1
公开(公告)日：2014-01-09
申请号：US13394303
申请日：2011-09-28
申请人： Dongping Wu , Shili Zhang , Zhiwei Zhu , Wei Zhang
发明人： Dongping Wu , Shili Zhang , Zhiwei Zhu , Wei Zhang
IPC分类号： H01L29/49 , H01L27/108
CPC分类号： H01L29/4933 , H01L21/28525 , H01L27/108 , H01L27/10844 , H01L27/10855 , H01L27/10873
摘要： A metal-semiconductor-compound thin film is disclosed, which is formed between a semiconductor layer and a polycrystalline semiconductor layer, the metal-semiconductor-compound thin film having a thickness of about 2˜5 nm, so as to improve a contact between the semiconductor layer and the polycrystalline semiconductor layer. A DRAM storage cell is also disclosed. A metal-semiconductor-compound thin film having a thickness of about 2-5 nm is added between a drain region of a MOS transistor and a polycrystalline semiconductor buffer layer in the DRAM storage cell, so as to enhance read/write speed of the transistor of the DRAM storage cell while preventing excessive increase in leakage current between the drain region and a semiconductor substrate. A method for making a DRAM storage cell is also disclosed. A DRAM storage cell made using the method has a metal-semiconductor-compound thin film, with a thickness controlled at about 2˜5 nm, formed between a drain region of its MOS transitor and a polycrystalline semiconductor buffer layer, so as to enhance the performance of the DRAM storage cell.
摘要翻译：公开了一种形成在半导体层和多晶半导体层之间的金属 - 半导体化合物薄膜，其厚度为约2〜5nm的金属 - 半导体 - 化合物薄膜，从而改善了半导体层以及多晶半导体层。还公开了DRAM存储单元。在DRAM存储单元中的MOS晶体管的漏极区域和多晶半导体缓冲层之间添加厚度约为2-5nm的金属半导体化合物薄膜，以提高晶体管的读/写速度的同时防止漏极区域和半导体衬底之间的漏电流的过度增加。还公开了一种用于制造DRAM存储单元的方法。使用该方法制造的DRAM存储单元具有形成在其MOS跨极的漏极区域和多晶半导体缓冲层之间的厚度控制在约2〜5nm的金属 - 半导体 - 化合物薄膜，以便增强 DRAM存储单元的性能。

15. 发明申请

US20140034956A1 Asymmetric Gate MOS Device and Method of Making 审中-公开
标题翻译：不对称门MOS器件及其制造方法
公开(公告)号：US20140034956A1
公开(公告)日：2014-02-06
申请号：US13635071
申请日：2011-10-31
申请人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
发明人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
IPC分类号： H01L21/285 , H01L21/28 , H01L29/04 , H01L29/78 , H01L29/66
CPC分类号： H01L21/28008 , H01L21/26586 , H01L21/28097 , H01L21/28105 , H01L21/2815 , H01L21/28518 , H01L29/04 , H01L29/4975 , H01L29/66575 , H01L29/6659 , H01L29/66659 , H01L29/7835
摘要： An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented.
摘要翻译：公开了一种不对称门MOS器件。栅极是金属栅极，金属栅极在源极侧与MOS器件的漏极侧具有不同的功函，使得MOS器件的整体性能参数更加优化。还公开了制造不对称栅极MOS器件的方法。在该方法中，将掺杂剂离子注入到MOS器件的栅极中，以使栅极在源极侧与MOS器件的漏极侧上具有不同的功函数。结果，MOS器件的整体性能参数更加优化。该方法可以很容易地实现。

16. 发明申请

US20140011355A1 Method of Making Metal/Semiconductor Compound Thin Film 审中-公开
标题翻译：制造金属/半导体复合薄膜的方法
公开(公告)号：US20140011355A1
公开(公告)日：2014-01-09
申请号：US13391623
申请日：2011-09-28
申请人： Dongping Wu , Zhiwei Zhu , Shili Zhang , Wei Zhang
发明人： Dongping Wu , Zhiwei Zhu , Shili Zhang , Wei Zhang
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , H01L21/2855 , H01L29/456
摘要： The present disclosure provides a method of making metal/semiconductor compound thin films, in which a target material is partially ionized into an ionic state during metal deposition using a PVD process, so as to produce metal ions, and in which a substrate bias voltage is applied to a semiconductor substrate, causing the metal ions to accelerate into the semiconductor substrate and enter the semiconductor substrate, resulting in more metal ions diffusing to the surface of the semiconductor substrate, greater deposition depth, and increased thickness of the eventually formed metal/semiconductor compound thin film. An amount of metal ions entering the semiconductor substrate can be adjusted by adjusting the substrate bias voltage, so as to adjust the thickness of the eventually formed metal/semiconductor compound.
摘要翻译：本公开提供了一种制造金属/半导体化合物薄膜的方法，其中使用PVD工艺在金属沉积期间目标材料被部分电离成离子状态，以产生金属离子，并且其中衬底偏压为施加到半导体衬底，使金属离子加速进入半导体衬底并进入半导体衬底，导致更多的金属离子扩散到半导体衬底的表面，更大的沉积深度和最终形成的金属/半导体的厚度增加复合薄膜。可以通过调整衬底偏置电压来调节进入半导体衬底的金属离子的量，以便调整最终形成的金属/半导体化合物的厚度。

17. 外观设计

USD1004162S1 Outdoor lamp 有权
公开(公告)号：USD1004162S1
公开(公告)日：2023-11-07
申请号：US29743460
申请日：2020-07-22
申请人： Bruce Pi , Wei Kang , Zhixiang Chen , Wei Zhang
设计人： Bruce Pi , Wei Kang , Zhixiang Chen , Wei Zhang
摘要： FIG. 1 is a perspective view of an outdoor lamp showing our new design.
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

18. 发明申请

US20220110303A1 APPARATUS AND METHODS FOR EXPANDING AND COLLAPSING A ROD 有权
公开(公告)号：US20220110303A1
公开(公告)日：2022-04-14
申请号：US17067711
申请日：2020-10-11
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A01K87/02
摘要： Methods and apparatus for expanding a rod from a collapsed position to a formed position are disclosed. One such apparatus includes a plurality of segments for forming the body of the collapsible rod including with each segment coupled to each immediately adjacent segment of the plurality of segments. The apparatus may include a coupler for coupling each segment of the plurality of segments to each immediately adjacent segment of the plurality of segments. The coupler may stretch from a base segment to the tip of the apparatus and may be biased to apply a force to hold the plurality of segments in a formed position and to urge the plurality of segments into a formed position from a collapsed position. In the formed position, the plurality of segments may be aligned end-to-end to form a rod and in the collapsed position, the plurality of segments may be folded against each other such that cylindrical walls of each of the plurality of segments are positioned adjacent each other.

19. 发明申请

US20180295974A1 Convertible Bullet-proof Backpack 审中-公开
公开(公告)号：US20180295974A1
公开(公告)日：2018-10-18
申请号：US15731045
申请日：2017-04-12
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A45F4/02 , F41H1/02 , A45C15/00 , F41H5/08
CPC分类号： A45F4/02 , A45C3/001 , A45C7/0068 , A45C13/103 , A45C15/00 , A45F3/04 , A45F3/06 , F41H1/00 , F41H1/02 , F41H5/00 , F41H5/08
摘要： A convertible bullet-proof backpack and vest includes a body section divided into a front portion, a middle portion, and back portion. The middle portion has a head slot opening, and the front and back portions have respective sections of bullet-proof fabric integrated therein. A zipper runs around an outer perimeter of the front and back portions. In a backpack configuration, the front portion and the back portion fold toward each other and the zipper secures the outer perimeters of the front portion and the back portion together thereby forming a hollow backpack interior between them. In a bullet-proof vest configuration, the zipper is unzipped thereby allowing a user to insert their head through the head slot opening such that the front portion hangs in front of a torso of the user and the back portion hangs behind the torso of the user.

20. 发明申请

US20180177625A1 APPARATUS AND METHOD FOR TREATING MALE IMPOTENCE 审中-公开
公开(公告)号：US20180177625A1
公开(公告)日：2018-06-28
申请号：US15820401
申请日：2017-11-21
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A61F5/41
CPC分类号： A61F5/41 , A61F2005/411
摘要： The present invention strategically utilizes the sturdiness of thin wires enwrapped inside a thick layer of soft material such as silicone rubber which is smoother and softer than human tissue. Therefore, the device doesn't cause any damage or side effect and feels comfortable to user. The exposure of skin is 90% or higher, therefore solves the lack of sensation issue faced by prior art devices. The device is hard and yet flexible, the side walls or double bars are positioned toward ventral side of the device so that it is pleasing to the eye during use in addition to feeling good by the user.

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