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11. 发明授权

US08450175B2 Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith 有权
标题翻译：形成垂直晶体管和至少与其电耦合的导线的方法
公开(公告)号：US08450175B2
公开(公告)日：2013-05-28
申请号：US13031829
申请日：2011-02-22
申请人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
发明人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823487 , H01L27/108 , H01L27/10876 , H01L27/1104 , H01L29/41741 , H01L29/66666 , H01L29/66825 , H01L29/66833
摘要： Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is implanted through bases of the trenches into semiconductive material there-below. Such impurity is diffused into the masking material received laterally over the elevationally inner sidewall portions of the trenches and into semiconductive material received between the trenches below a mid-channel portion. An elevationally inner source/drain is formed in the semiconductive material below the mid-channel portion. The inner source/drain portion includes said semiconductive material between the trenches which has the impurity therein. A conductive line is formed laterally over and electrically coupled to at least one of opposing sides of the inner source/drain. A gate is formed elevationally outward of and spaced from the conductive line and laterally adjacent the mid-channel portion. Other embodiments are disclosed.
摘要翻译：沟槽形成半导体材料。遮蔽材料横向形成在沟槽的至少垂直内侧壁部分上。电导率改性杂质通过沟槽的基底注入到下面的半导体材料中。这种杂质被扩散到横向覆盖在沟槽的顶部内侧壁部分上的掩蔽材料中，并且被扩散到半导体材料中，该半导体材料被容纳在中间通道部分下方的沟槽之间。在中间通道部分下方的半导体材料中形成一个正面内部源极/漏极。内部源极/漏极部分包括在其中具有杂质的沟槽之间的所述半导体材料。导电线横向形成并电耦合到内源/漏的相对侧中的至少一个。栅极形成在导电线的正上方并与导电线隔开并且横向邻近中间通道部分。公开了其他实施例。

12. 发明申请

US20120149172A1 METHOD FOR FABRICATING TRENCH ISOLATION STRUCTURE 有权
标题翻译：用于制造分离分离结构的方法
公开(公告)号：US20120149172A1
公开(公告)日：2012-06-14
申请号：US12962655
申请日：2010-12-08
申请人： Jen-Jui Huang , Hung-Ming Tsai
发明人： Jen-Jui Huang , Hung-Ming Tsai
IPC分类号： H01L21/31
CPC分类号： H01L21/76227
摘要： A method for fabricating a trench isolation structure is described. A trench is formed in a substrate. A liner layer is formed at least in the trench. A precursor layer is formed at least on the sidewalls of the trench. The precursor layer is converted to an insulating layer that has a larger volume than the precursor layer and fills up the trench.
摘要翻译：描述了一种用于制造沟槽隔离结构的方法。在衬底中形成沟槽。至少在沟槽中形成衬垫层。至少在沟槽的侧壁上形成前体层。前体层被转换成具有比前体层更大的体积并填充沟槽的绝缘层。

13. 发明授权

US08921183B2 Method for fabricating trench isolation structure 有权
标题翻译：沟槽隔离结构的制作方法
公开(公告)号：US08921183B2
公开(公告)日：2014-12-30
申请号：US12962655
申请日：2010-12-08
申请人： Jen-Jui Huang , Hung-Ming Tsai
发明人： Jen-Jui Huang , Hung-Ming Tsai
IPC分类号： H01L21/336 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76227
摘要： A method for fabricating a trench isolation structure is described. A trench is formed in a substrate. A liner layer is formed at least in the trench. A precursor layer is formed at least on the sidewalls of the trench. The precursor layer is converted to an insulating layer that has a larger volume than the precursor layer and fills up the trench.
摘要翻译：描述了一种用于制造沟槽隔离结构的方法。在衬底中形成沟槽。至少在沟槽中形成衬垫层。至少在沟槽的侧壁上形成前体层。前体层被转换成具有比前体层更大的体积并填充沟槽的绝缘层。

14. 发明申请

US20120214285A1 Methods Of Forming A Vertical Transistor And At Least A Conductive Line Electrically Coupled Therewith, Methods Of Forming Memory Cells, And Methods Of Forming Arrays Of Memory Cells 有权
标题翻译：形成垂直晶体管的方法和至少一个导电线电耦合的方法，形成记忆细胞的方法和形成记忆细胞阵列的方法
公开(公告)号：US20120214285A1
公开(公告)日：2012-08-23
申请号：US13031829
申请日：2011-02-22
申请人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
发明人： Jaydip Guha , Shyam Surthi , Suraj J. Mathew , Kamal M. Karda , Hung-Ming Tsai
IPC分类号： H01L21/336
CPC分类号： H01L21/823487 , H01L27/108 , H01L27/10876 , H01L27/1104 , H01L29/41741 , H01L29/66666 , H01L29/66825 , H01L29/66833
摘要： Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is implanted through bases of the trenches into semiconductive material there-below. Such impurity is diffused into the masking material received laterally over the elevationally inner sidewall portions of the trenches and into semiconductive material received between the trenches below a mid-channel portion. An elevationally inner source/drain is formed in the semiconductive material below the mid-channel portion. The inner source/drain portion includes said semiconductive material between the trenches which has the impurity therein. A conductive line is formed laterally over and electrically coupled to at least one of opposing sides of the inner source/drain. A gate is formed elevationally outward of and spaced from the conductive line and laterally adjacent the mid-channel portion. Other embodiments are disclosed.
摘要翻译：沟槽形成半导体材料。遮蔽材料横向形成在沟槽的至少垂直内侧壁部分上。电导率改性杂质通过沟槽的基底注入到下面的半导体材料中。这种杂质被扩散到横向覆盖在沟槽的顶部内侧壁部分上的掩蔽材料中，并且被扩散到半导体材料中，该半导体材料被容纳在中间通道部分下方的沟槽之间。在中间通道部分下方的半导体材料中形成一个正面内部源极/漏极。内部源极/漏极部分包括在其中具有杂质的沟槽之间的所述半导体材料。导电线横向形成并电耦合到内源/漏的相对侧中的至少一个。栅极形成在导电线的正上方并与导电线隔开并且横向邻近中间通道部分。公开了其他实施例。

15. 发明授权

US07855124B2 Method for forming a semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US07855124B2
公开(公告)日：2010-12-21
申请号：US12035529
申请日：2008-02-22
申请人： Hung-Ming Tsai , Ching-Nan Hsiao , Chung-Lin Huang
发明人： Hung-Ming Tsai , Ching-Nan Hsiao , Chung-Lin Huang
IPC分类号： H01L21/76
CPC分类号： H01L21/823437 , H01L21/28273 , H01L21/823468 , H01L21/823481 , H01L27/11521
摘要： A method for forming a semiconductor device, includes the steps of providing a substrate; forming a patterned stack on the substrate including a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer and a mask layer on the first conductive layer, wherein a width of the mask layer is smaller than a width of the first conductive layer; forming a second dielectric layer on the sidewall of the patterned stack; forming a third dielectric layer on the substrate; forming a second conductive layer over the substrate; and removing the mask layer and a portion of the first conductive layer covered by the mask layer to form an opening so as to partially expose the first conductive layer.
摘要翻译：一种形成半导体器件的方法，包括以下步骤：提供衬底; 在所述衬底上形成图案化的叠层，所述衬底上包括在所述衬底上的第一电介质层，所述第一电介质层上的第一导电层和所述第一导电层上的掩模层，其中所述掩模层的宽度小于所述第一导电层的宽度导电层; 在所述图案化叠层的侧壁上形成第二电介质层; 在所述基板上形成第三电介质层; 在所述衬底上形成第二导电层; 以及去除所述掩模层和由所述掩模层覆盖的所述第一导电层的一部分以形成开口以部分地暴露所述第一导电层。

16. 发明申请

US20100032743A1 DYNAMIC RANDOM ACCESS MEMORY STRUCTURE, ARRAY THEREOF, AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：动态随机访问存储器结构及其阵列及其制造方法
公开(公告)号：US20100032743A1
公开(公告)日：2010-02-11
申请号：US12236487
申请日：2008-09-23
申请人： Jen-Jui Huang , Hung-Ming Tsai , Kuo-Chung Chen
发明人： Jen-Jui Huang , Hung-Ming Tsai , Kuo-Chung Chen
IPC分类号： H01L27/108
CPC分类号： H01L27/10885 , H01L27/10823 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： A dynamic random access memory (DRAM) structure has a stacked capacitor disposed above an upper source/drain region of a vertical transistor having a surrounding gate. The gates of each row of a memory array are electrically connected with a buried word line. Each of bit lines is disposed between two adjacent columns of transistors and electrically connected with lower source/drain regions through bit line contacts. The DRAM structure may have a unit cell size of 4F2.
摘要翻译：动态随机存取存储器（DRAM）结构具有堆叠电容器，其设置在具有周围栅极的垂直晶体管的上部源极/漏极区域之上。存储器阵列的每行的栅极与掩埋字线电连接。每个位线设置在两个相邻的晶体管列之间，并通过位线触点与下部源极/漏极区电连接。 DRAM结构可以具有4F2的单元电池尺寸。

17. 发明申请

US20080316173A1 Computer cursor control device which can broadcast multimedia data 审中-公开
标题翻译：可广播多媒体数据的电脑光标控制装置
公开(公告)号：US20080316173A1
公开(公告)日：2008-12-25
申请号：US11812828
申请日：2007-06-22
申请人： Hung-Ming Tsai
发明人： Hung-Ming Tsai
IPC分类号： G06F3/033
CPC分类号： G06F3/03543 , G06F3/0317
摘要： A computer cursor control device is disclosed which can broadcast multimedia and control a computer cursor and comprises an interface unit; a mouse module connecting to the interface unit and controlling the computer cursor in a mouse mode; a multimedia module connecting to the interface unit and accessing a multimedia file in a multimedia mode for further broadcasting the multimedia file; and a button control unit connecting to the mouse module and the multimedia module respectively which enters a control signal for controlling the computer cursor or broadcasting the multimedia file.
摘要翻译：公开了一种计算机光标控制装置，其可以广播多媒体并控制计算机光标并且包括接口单元; 连接到接口单元并以鼠标模式控制计算机光标的鼠标模块; 连接到所述接口单元并以多媒体模式访问多媒体文件以进一步广播所述多媒体文件的多媒体模块; 以及分别连接到鼠标模块和多媒体模块的按钮控制单元，其输入用于控制计算机光标或广播多媒体文件的控制信号。

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