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11. 发明授权

US06521545B1 Method of a surface treatment on a fluorinated silicate glass film 有权
标题翻译：氟化硅玻璃膜上的表面处理方法
公开(公告)号：US06521545B1
公开(公告)日：2003-02-18
申请号：US09682822
申请日：2001-10-23
申请人： Neng-Hui Yang , Chinh-Fu Lin , Yi-Fang Cheng , Cheng-Yuan Tsai
发明人： Neng-Hui Yang , Chinh-Fu Lin , Yi-Fang Cheng , Cheng-Yuan Tsai
IPC分类号： H01L2126
CPC分类号： H01L21/3105
摘要： The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the fluorine silicate glass layer are in-situ removed to form a silicon oxide layer of a pre-determined thickness. Then, a photoresist layer is coated on the silicon oxide layer. After an exposing process, a pre-determined latent pattern is formed in the photoresist layer. Finally, after a developing process, the pre-determined latent pattern of the photoresist is removed so as to expose corresponding portions of the silicon oxide layer underneath the latent pattern of the photoresist layer. As a result, the present invention solves a problem that fluorine ions in the fluorine silicate glass layer 24 diffuse to a surface of the fluorine silicate glass layer 24 to combine with water to form hydrofluoric acid, that contaminates the photoresist and leads to reliability issues.
摘要翻译：本发明示出了在氟硅玻璃膜上进行表面处理的方法。首先，在半导体晶片上沉积氟硅酸盐玻璃层。氟硅玻璃层中的部分氟离子被原位去除以形成预定厚度的氧化硅层。然后，将光致抗蚀剂层涂覆在氧化硅层上。在曝光处理之后，在光致抗蚀剂层中形成预定的潜像。最后，在显影处理之后，去除光致抗蚀剂的预定潜在图案，以暴露在光致抗蚀剂层的潜在图案之下的氧化硅层的相应部分。结果，本发明解决了氟硅玻璃层24中的氟离子扩散到氟硅酸盐玻璃层24的表面，与水结合形成氢氟酸的问题，污染光致抗蚀剂并导致可靠性问题。

12. 发明授权

US06350681B1 Method of forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06350681B1
公开(公告)日：2002-02-26
申请号：US09780549
申请日：2001-02-09
申请人： Anseime Chen , Chingfu Lin , Yi-Fang Cheng , I-Hsiung Huang
发明人： Anseime Chen , Chingfu Lin , Yi-Fang Cheng , I-Hsiung Huang
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a multiple layer damascene structure. A substrate comprising of a multi-layered stack that includes, from bottom to top, a metallic layer, a first etching stop layer, a first dielectric layer, a second etching stop layer and a second dielectric layer is provided. A photoresist layer having large area openings and vias pattern is formed over the substrate. Large area openings and vias that expose a portion of the first etching stop layer are formed in the substrate. A barrier layer that fills all the large area openings and vias is formed over the substrate. Chemical-mechanical polishing is conducted to remove a portion of the barrier layer and expose the second dielectric layer. A second photoresist having a trench pattern thereon is formed over the substrate. Using the second photoresist as a mask, etching is conducted so that the second etching stop layer around the vias is exposed. Lastly, the barrier layer is removed.
摘要翻译：一种形成多层镶嵌结构的方法。提供一种包括多层叠层的衬底，其包括从底部到顶部的金属层，第一蚀刻停止层，第一介电层，第二蚀刻停止层和第二介电层。在衬底上形成具有大面积开口和通孔图案的光致抗蚀剂层。在基板上形成露出一部分第一蚀刻停止层的大面积开口和通孔。填充所有大面积开口和通孔的阻挡层形成在衬底上。进行化学机械抛光以去除阻挡层的一部分并暴露第二介电层。其上具有沟槽图案的第二光致抗蚀剂形成在衬底上。使用第二光致抗蚀剂作为掩模，进行蚀刻，使得通孔周围的第二蚀刻停止层露出。最后，去除阻挡层。

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