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11. 发明申请

US20060284626A1 Protection against the effects of condensate bridges 有权
公开(公告)号：US20060284626A1
公开(公告)日：2006-12-21
申请号：US10546763
申请日：2004-02-12
申请人： Sascha D'Angelico , Sergey Lopatin
发明人： Sascha D'Angelico , Sergey Lopatin
IPC分类号： H04B7/00 , G01R27/08
CPC分类号： G01F23/2966 , G01F23/2968
摘要： Apparatus for measuring and/or monitoring a process variable of a medium. The apparatus includes: an oscillatable unit; a driver/receiver unit, which excites the oscillatable unit to oscillate, and/or which receives its oscillations; a control/evaluation unit, which controls the driver/receiver unit, and/or which evaluates the oscillations of the oscillatable unit; and at least one transmitting line and one receiving line between the control/evaluation unit and the driver/receiver unit. At least a third line is provided, which is embodied and arranged in a manner such that it is located between the transmitting line and the receiving line, and is connected with a voltage source, which has an output impedance, which is smaller than the impedance of a condensate bridge.

12. 发明申请

US20050085073A1 Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition 失效
标题翻译：使用化学气相沉积（CVD）铜沉积的粘附前体层的方法
公开(公告)号：US20050085073A1
公开(公告)日：2005-04-21
申请号：US10687186
申请日：2003-10-16
申请人： Sergey Lopatin , Paul Besser , Alline Myers , Jeremias Romero , Minh Tran , Lu You , Connie Wang
发明人： Sergey Lopatin , Paul Besser , Alline Myers , Jeremias Romero , Minh Tran , Lu You , Connie Wang
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76846 , H01L21/76877
摘要： An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.
摘要翻译：示例性实施例涉及在集成电路制造工艺中使用粘附前体的方法。该方法包括在介电材料上提供材料的气体并在粘附前体层上提供铜层。粘附前体层由气体形成，电介质材料包括孔。

13. 发明授权

US06515368B1 Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper 有权
标题翻译：具有铜填充通孔的半导体器件包括用于减少铜的电迁移的铜 - 锌/合金膜
公开(公告)号：US06515368B1
公开(公告)日：2003-02-04
申请号：US10016410
申请日：2001-12-07
申请人： Sergey Lopatin , Alexander H. Nickel
发明人： Sergey Lopatin , Alexander H. Nickel
IPC分类号： H01L23532
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of reducing electromigration in copper interconnect lines by restricting Cu-diffusion pathways along a Cu surface via doping the Cu surface with Zn from an interim copper-zinc alloy (Cu—Zn) thin film electroplated on the copper (Cu) surface from a stable chemical solution, and controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using interim reduced-oxygen Cu—Zn alloy thin films for forming an encapsulated dual-inlaid interconnect structure. The films are formed by electroplating a Cu surface via by electroplating, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin films and a Cu-fill; and planarizing the interconnect structure.
摘要翻译：一种通过在铜（Cu）表面上电镀铜离子铜（Cu）的中间铜 - 锌合金（Cu-Zn）薄膜上，通过用Zn掺杂Cu表面来限制沿Cu表面的Cu扩散路径来减少铜互连线中的电迁移的方法稳定的化学溶液，并且控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性，以及由此形成的半导体器件。该方法包括使用临时还原氧Cu-Zn合金薄膜来形成封装的双镶嵌互连结构。通过电镀电镀Cu表面，通过电镀Cu晶体，以独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂形成Cu表面; 并对中间电镀Cu-Zn合金薄膜和Cu填充进行退火; 并平坦化互连结构。

14. 发明授权

US06495443B1 Method of re-working copper damascene wafers 失效
标题翻译：重铜铜镶嵌晶圆的方法
公开(公告)号：US06495443B1
公开(公告)日：2002-12-17
申请号：US09874513
申请日：2001-06-05
申请人： Sergey Lopatin , Richard J. Huang
发明人： Sergey Lopatin , Richard J. Huang
IPC分类号： H01L214763
CPC分类号： H01L21/2885 , H01L21/76877 , H01L21/76892
摘要： A method of re-working a semiconductor device having a defective copper damascene interconnect structure, including the steps of obtaining a semiconductor wafer having at least one defect in a copper damascene interconnect structure; placing the wafer in an electrolyte in an electrolytic cell such that the defective copper damascene interconnect structure forms an anode; applying electrical current to the wafer to remove from the wafer substantially all copper from the defective copper damascene interconnect structure; re-applying copper to the semiconductor wafer to form a copper damascene interconnect structure.
摘要翻译：一种重新制造具有不良铜镶嵌互连结构的半导体器件的方法，包括以下步骤：获得具有铜镶嵌互连结构中的至少一个缺陷的半导体晶片; 将晶片放置在电解槽中的电解液中，使得有缺陷的铜镶嵌互连结构形成阳极; 向所述晶片施加电流以从所述晶片基本上全部铜从所述有缺陷的铜镶嵌互连结构中去除; 将铜重新施加到半导体晶片以形成铜镶嵌互连结构。

15. 发明授权

US06482656B1 Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit 有权
标题翻译：用于集成电路的高Tc超导镶嵌互连的电化学形成方法
公开(公告)号：US06482656B1
公开(公告)日：2002-11-19
申请号：US09873667
申请日：2001-06-04
申请人： Sergey Lopatin
发明人： Sergey Lopatin
IPC分类号： H01L2100
CPC分类号： H01L21/76871 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76891 , H01L23/53285 , H01L39/2451 , H01L2924/0002 , Y10S505/742 , H01L2924/00
摘要： A semiconductor device including a damascene superconducting interconnect, formed of a Ba—Cu—Ca—O superconducting material. A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method including forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; forming a Cu—Ba alloy layer; filling the cavity by depositing a Cu—Ca—O film; and annealing in oxygen flow to form a Ba—Cu—Ca—O superconductor on the barrier layer. In an alternate embodiment, no barrier layer is formed.
摘要翻译：包括由Ba-Cu-Ca-O超导材料形成的镶嵌超导互连的半导体器件。一种形成超导镶嵌互连结构的方法及其制造的结构，所述方法包括在层间电介质中形成空腔; 在空腔中形成阻挡层; 在阻挡层上的空腔中形成晶种层; 形成Cu-Ba合金层; 通过沉积Cu-Ca-O膜来填充空腔; 并在氧气流中退火以在阻挡层上形成Ba-Cu-Ca-O超导体。在替代实施例中，不形成阻挡层。

16. 发明授权

US06472310B1 Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure 有权
标题翻译：锡钯活化，在互连结构中的阻挡材料上具有最大的核密度和均匀性
公开(公告)号：US06472310B1
公开(公告)日：2002-10-29
申请号：US10118511
申请日：2002-04-08
申请人： Krishnashree Achuthan , Sergey Lopatin
发明人： Krishnashree Achuthan , Sergey Lopatin
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76873 , H01L2221/1089 , Y10S977/701 , Y10S977/712 , Y10S977/721
摘要： For fabricating an interconnect structure formed within an interconnect opening surrounded by dielectric material, a layer of diffusion barrier material is formed on at least one wall of the interconnect opening. An activation layer comprised of palladium is formed on the layer of diffusion barrier material when the interconnect opening is immersed in an activation bath comprised of tin ions and palladium ions. The tin ions have a tin ion concentration in the activation bath that is greater than a palladium ion concentration in the activation bath. A layer of seed material is deposited on the activation layer in an electroless deposition process, and the interconnect opening is filled with a conductive fill material grown from the layer of seed material. A layer of silicon rich material may be formed on the layer of diffusion barrier material before deposition of the activation layer such that the activation layer is formed on the layer of silicon rich material. In that case, a ratio of the tin ion concentration to the palladium ion concentration in the activation bath is adjusted to decrease with an amount of silicon atoms of the layer of silicon rich material deposited on the layer of diffusion barrier material. The present invention may be practiced to particular advantage when the layer of seed material and the conductive fill material are comprised of copper.
摘要翻译：为了制造形成在由电介质材料包围的互连开口内的互连结构，在互连开口的至少一个壁上形成扩散阻挡材料层。当互连开口浸入由锡离子和钯离子组成的活化浴中时，在扩散阻挡材料层上形成由钯构成的活化层。锡离子在活化浴中的锡离子浓度大于活化浴中的钯离子浓度。一种种子材料在无电沉积工艺中沉积在活化层上，并且互连开口填充有从种子材料层生长的导电填充材料。可以在沉积激活层之前在扩散阻挡材料层上形成富硅材料层，使得活化层形成在富硅材料层上。在这种情况下，调节活化浴中锡离子浓度与钯离子浓度的比例，随着沉积在扩散阻挡材料层上的富硅材料层的硅原子量而减小。当种子材料层和导电填充材料由铜组成时，本发明可以特别有利。

17. 发明授权

US06281587B1 Multi-layered coaxial interconnect structure 有权
标题翻译：多层同轴互连结构
公开(公告)号：US06281587B1
公开(公告)日：2001-08-28
申请号：US09522148
申请日：2000-03-09
申请人： Takeshi Nogami , Sergey Lopatin , Shekhar Pramanick
发明人： Takeshi Nogami , Sergey Lopatin , Shekhar Pramanick
IPC分类号： H01L2348
CPC分类号： H01L21/76885 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.
摘要翻译：提供一种形成多层互连结构的方法。在绝缘层上形成第一导电图案。在第一导电图案上沉积第一介电材料，并且在第一介电材料中形成插塞。在第一电介质材料上形成第二导电图案并且插塞以部分地形成多层互连结构。然后，将第一介电材料剥离掉，使多层互连结构暴露于空气。沉积薄层的第二介电材料以涂覆至少一部分互连结构。接下来，沉积薄层金属，以涂覆涂覆有第二介电材料的薄层的互连结构的至少一部分。第三介电材料沉积在互连结构上以代替剥离的第一介电材料。

18. 发明授权

US6060383A Method for making multilayered coaxial interconnect structure 有权
标题翻译：制造多层同轴互连结构的方法
公开(公告)号：US6060383A
公开(公告)日：2000-05-09
申请号：US131919
申请日：1998-08-10
申请人： Takeshi Nogami , Sergey Lopatin , Shekhar Pramanick
发明人： Takeshi Nogami , Sergey Lopatin , Shekhar Pramanick
IPC分类号： H01L21/768 , H01L21/465 , H01L21/469 , H01L21/47 , H01L21/471 , H01L21/475 , H01L21/4763
CPC分类号： H01L21/76885 , H01L23/5222 , H01L2924/0002
摘要： A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.
摘要翻译：提供一种形成多层互连结构的方法。在绝缘层上形成第一导电图案。在第一导电图案上沉积第一介电材料，并且在第一介电材料中形成插塞。在第一电介质材料上形成第二导电图案并且插塞以部分地形成多层互连结构。然后，将第一介电材料剥离掉，使多层互连结构暴露于空气。沉积薄层的第二介电材料以涂覆至少一部分互连结构。接下来，沉积薄层金属，以涂覆涂覆有第二介电材料的薄层的互连结构的至少一部分。第三介电材料沉积在互连结构上以代替剥离的第一介电材料。

19. 发明授权

US07799182B2 Electroplating on roll-to-roll flexible solar cell substrates 失效
标题翻译：卷对卷柔性太阳能电池基板上的电镀
公开(公告)号：US07799182B2
公开(公告)日：2010-09-21
申请号：US11566200
申请日：2006-12-01
申请人： Sergey Lopatin , David Eaglesham , Charles Gay
发明人： Sergey Lopatin , David Eaglesham , Charles Gay
IPC分类号： C25D17/00
CPC分类号： C25D5/022 , C25D5/18 , C25D7/08 , C25D17/00 , C25D17/001 , H01L31/022425 , H01L31/02245 , H01L31/022466 , H01L31/03926 , H01L31/0465 , H01L31/0508 , H01L31/0512 , H01L31/0516 , H01L31/188 , Y02E10/50
摘要： Embodiments of the invention contemplate the formation of a low cost flexible solar cell using a novel electroplating method and apparatus to form a metal contact structure. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. Solar cell substrates that may benefit from the invention include flexible substrates may have an active region that contains organic material, single crystal silicon, multi-crystalline silicon, polycrystalline silicon, germanium, and gallium arsenide, cadmium telluride, cadmium sulfide, copper indium gallium selenide, copper indium selenide, gallilium indium phosphide, as well as heterojunction cells that are used to convert sunlight to electrical power. The flexible substrates may have a flexible base that is adapted to support the active region of the solar cell device.
摘要翻译：本发明的实施例考虑使用新颖的电镀方法和装置形成金属接触结构来形成低成本的柔性太阳能电池。本文所述的装置和方法消除了执行一个或多个高温丝网印刷工艺以在太阳能电池基板的表面上形成导电特征的需要。在太阳能电池器件中形成的互连的电阻极大地影响太阳能电池的效率。可以受益于本发明的太阳能电池基板包括柔性基板可以具有含有有机材料，单晶硅，多晶硅，多晶硅，锗和砷化镓，碲化镉，硫化镉，铜铟镓硒的有源区，铜铟硒化铟，磷化铟镓，以及用于将阳光转换成电力的异质结电池。柔性基板可以具有适于支撑太阳能电池装置的有源区域的柔性基座。

20. 发明申请

US20080128268A1 HIGH-ASPECT RATIO ANODE AND APPARATUS FOR HIGH-SPEED ELECTROPLATING ON A SOLAR CELL SUBSTRATE 失效
标题翻译：高比例阳极和用于太阳能电池基板上高速电镀的装置
公开(公告)号：US20080128268A1
公开(公告)日：2008-06-05
申请号：US11566202
申请日：2006-12-01
申请人： Sergey Lopatin , Nicolay Y. Kovarsky , David Eaglesham , John O. Dukovic , Charles Gay
发明人： Sergey Lopatin , Nicolay Y. Kovarsky , David Eaglesham , John O. Dukovic , Charles Gay
IPC分类号： C23C14/00
CPC分类号： C25D5/022 , C25D7/08 , C25D17/00 , C25D17/001 , C25D17/008 , H01L31/022425 , H01L31/022433 , Y02E10/50
摘要： Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
摘要翻译：本发明的实施例考虑使用新颖的高速电镀方法和装置形成低成本太阳能电池，以形成具有使用电化学电镀工艺的选择性形成的金属线的金属接触结构。本文所述的装置和方法消除了执行一个或多个高温丝网印刷工艺以在太阳能电池基板的表面上形成导电特征的需要。在太阳能电池器件中形成的互连的电阻极大地影响太阳能电池的效率。因此，希望形成具有可靠和成本有效的低电阻连接的太阳能电池装置。因此，本文描述的本发明的一个或多个实施例适用于使用包含普通金属（例如铜）的电化学电镀工艺形成低成本且可靠的互连层。

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