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11. 发明授权

US08829511B2 Hybrid thin film transistor, manufacturing method thereof and display panel having the same 有权
标题翻译：混合薄膜晶体管，其制造方法和具有该混合薄膜晶体管的显示面板
公开(公告)号：US08829511B2
公开(公告)日：2014-09-09
申请号：US13234119
申请日：2011-09-15
申请人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
发明人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1251
摘要： A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.
摘要翻译：混合薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管。第一薄膜晶体管包括第一栅极，第一源极，第一漏极和设置在第一栅极，第一源极和第一漏极之间的第一半导体层，并且第一半导体层包括结晶硅层。第二薄膜晶体管包括第二栅极，第二源极，第二漏极和设置在第二栅极，第二源极和第二漏极之间的第二半导体层，第二半导体层包括金属氧化物半导体层。

12. 发明申请

US20120049197A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US20120049197A1
公开(公告)日：2012-03-01
申请号：US13004034
申请日：2011-01-11
申请人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
发明人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/1237
摘要： A pixel structure is provided. A first insulating pattern is on the first polysilicon pattern. A second insulating pattern is on the second polysilicon pattern and separated from the first insulating pattern. An insulating layer covers the first and the second insulating patterns. A first gate and a second gate are on the insulating layer. A first covering layer covers the first and the second gates. A first source metal layer and a first drain metal layer are on the first covering layer and electrically connected to a first source region and a first drain region. A second source metal layer and a second drain metal layer are on the first covering layer and electrically connected to a second source region and a second drain region. A pixel electrode is electrically connected to the first drain metal layer.
摘要翻译：提供像素结构。第一绝缘图案在第一多晶硅图案上。第二绝缘图案在第二多晶硅图案上并且与第一绝缘图案分离。绝缘层覆盖第一和第二绝缘图案。第一栅极和第二栅极位于绝缘层上。第一覆盖层覆盖第一和第二栅极。第一源极金属层和第一漏极金属层在第一覆盖层上并且电连接到第一源极区域和第一漏极区域。第二源极金属层和第二漏极金属层在第一覆盖层上并且电连接到第二源极区域和第二漏极区域。像素电极电连接到第一漏极金属层。

13. 发明申请

US20120305910A1 HYBRID THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL HAVING THE SAME 有权
标题翻译：混合薄膜晶体管及其制造方法及其显示面板
公开(公告)号：US20120305910A1
公开(公告)日：2012-12-06
申请号：US13234119
申请日：2011-09-15
申请人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
发明人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
IPC分类号： H01L29/24 , H01L33/16 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1251
摘要： A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.
摘要翻译：混合薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管。第一薄膜晶体管包括第一栅极，第一源极，第一漏极和设置在第一栅极，第一源极和第一漏极之间的第一半导体层，并且第一半导体层包括结晶硅层。第二薄膜晶体管包括第二栅极，第二源极，第二漏极和设置在第二栅极，第二源极和第二漏极之间的第二半导体层，第二半导体层包括金属氧化物半导体层。

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