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11. 发明授权

US07485691B1 Polysilane compositions, methods for their synthesis and films formed therefrom 有权
标题翻译：聚硅烷组合物，其合成方法和由其形成的薄膜
公开(公告)号：US07485691B1
公开(公告)日：2009-02-03
申请号：US11246014
申请日：2005-10-06
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
IPC分类号： C08G77/06 , C08G77/12 , C08G77/04 , C07F7/04 , C07F7/08
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c-AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译：公开了聚硅烷，含有它们的油墨及其制备方法。聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）> = 10，如果n = 0，则q> = 3，如果n和q <0，则（n + q）> = 6。 p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤（或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛，有或没有使用紫外线照射。

12. 发明授权

US08057865B1 Polysilane compositions, methods for their synthesis and films formed therefrom 有权
标题翻译：聚硅烷组合物，其合成方法和由其形成的薄膜
公开(公告)号：US08057865B1
公开(公告)日：2011-11-15
申请号：US11893140
申请日：2007-08-14
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
IPC分类号： C08F2/48 , C08J7/18 , B05D3/02 , B05D3/06
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c—AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, Halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′h and/or the formula c—AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译：公开了聚硅烷，含有它们的油墨及其制备方法。聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R为H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤（或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛，有或没有使用紫外线照射。

13. 发明授权

US08236916B1 Polysilane compositions, methods for their synthesis and films formed therefrom 有权
标题翻译：聚硅烷组合物，其合成方法和由其形成的薄膜
公开(公告)号：US08236916B1
公开(公告)日：2012-08-07
申请号：US12343200
申请日：2008-12-23
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
IPC分类号： C08G77/00 , C07F7/02 , C07F7/21
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译：公开了聚硅烷，含有它们的油墨及其制备方法。聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 一方面，该方法通常包括将式AHaR14-a，式AkHgR1'h和/或式c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂组合的步骤（或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛，有或没有使用紫外线照射。

14. 发明授权

US07723457B1 Polysilane compositions, methods for their synthesis and films formed therefrom 有权
标题翻译：聚硅烷组合物，其合成方法和由其形成的薄膜
公开(公告)号：US07723457B1
公开(公告)日：2010-05-25
申请号：US12347911
申请日：2008-12-31
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger , Brent Ridley
IPC分类号： C08G77/06 , C08G77/12 , C08G77/04 , C07F7/04 , C07F7/08
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)n(c-AmHpm-2)q]—H, where each instance of A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14-a, the formula AkHgR1′h and/or the formula c-AmHpmR1fm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译：公开了聚硅烷，含有它们的油墨及其制备方法。聚硅烷通常具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A的每个实例独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）≥10，如果n = 0，则q≥3，如果n和q≠0，则（n + q）≥6; p为1或2; 在一方面，该方法通常包括以下步骤：将式AHaR14-a的硅烷化合物，式AkHgR1'h和/或式c-AmHpmR1fm与式R4xR5yMXz的催化剂（或其固定化的衍生物）以形成聚（芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷，并使聚（芳基）硅烷与吸附剂接触以除去金属M.另一方面，该方法包括卤化聚芳基硅烷以形成卤代聚硅烷的步骤; 并用金属氢化物还原卤代聚硅烷以形成聚硅烷。通过硅烷和/或锗烷的脱氢耦合来合成半导体油墨允许调节油墨性能（例如粘度，沸点和表面张力）以及通过旋涂，喷墨，滴浇等沉积硅膜或岛，有或没有使用紫外线照射。

15. 发明授权

US08603426B1 Method of making a silicon-containing film 有权
标题翻译：制造含硅膜的方法
公开(公告)号：US08603426B1
公开(公告)日：2013-12-10
申请号：US13730432
申请日：2012-12-28
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B21/068
CPC分类号： C01B6/00 , C01B6/003 , C01B6/34
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺，与传统的光刻工艺。

16. 发明申请

US20140094004A1 Printed Dopant Layers 有权
标题翻译：印刷掺杂层
公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

17. 发明申请

US20100244133A1 Printed Dopant Layers 有权
标题翻译：印刷掺杂层
公开(公告)号：US20100244133A1
公开(公告)日：2010-09-30
申请号：US12797274
申请日：2010-06-09
申请人： Arvind KAMATH , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind KAMATH , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

18. 发明授权

US07701011B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译：一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜，以及与第一和第二半导体岛电接触的金属层。第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。

19. 发明授权

US08304780B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

20. 发明授权

US07767520B2 Printed dopant layers 有权
标题翻译：印刷掺杂剂层
公开(公告)号：US07767520B2
公开(公告)日：2010-08-03
申请号：US11888949
申请日：2007-08-03
申请人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
发明人： Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Patrick Smith , Fabio Zürcher
IPC分类号： H01L21/8242
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译：一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层，在半导体岛的第二子集上或之上，以及退火。第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

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