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11. 发明授权

US07419837B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07419837B2
公开(公告)日：2008-09-02
申请号：US11443136
申请日：2006-05-31
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/00
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).
摘要翻译：在半导体衬底（11）的上方形成Pt膜（24），PLZT膜（25）和顶部电极膜（26）。接下来，对顶部电极膜（26）进行图案化。然后，形成覆盖PLZT膜（25）的露出部分的PLZT膜（27）作为防蒸镀膜。然后，在氧化气氛中进行热处理，以回收对PLZT膜（25）的损伤。在图案化顶部电极膜（26）和PLZT膜（27）的形成之间不进行热处理。此后，通过使PLZT膜（25）和Pt膜（24）构图来形成铁电电容器。

12. 发明申请

US20080061345A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080061345A1
公开(公告)日：2008-03-13
申请号：US11898374
申请日：2007-09-11
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L28/40 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： The semiconductor device has an insulation layer formed over a semiconductor substrate, a conductor plug 46 buried in the insulation layer, a capacitor formed above the insulation layer and the conductor plug and including a lower electrode formed of the first conduction film and the second conduction film formed over the first conduction film and formed of Pt, Pt alloy, Pd or Pd alloy, a capacitor dielectric film formed of a ferroelectric or a high dielectric formed over the lower electrode and an upper electrode formed over the capacitor dielectric film, the capacitor dielectric film contains a first element of Pb or Bi, and the concentration peak of the first element diffused in the lower electrode from the capacitor dielectric film positioning in the interface between the first conduction film and the second conduction film.
摘要翻译：半导体器件具有形成在半导体衬底上的绝缘层，埋在绝缘层中的导体插塞46，形成在绝缘层上方的电容器和导体插头，并且包括由第一导电膜和第二导电膜形成的下电极形成在第一导电膜上并由Pt，Pt合金，Pd或Pd合金形成，由在下电极上形成的铁电或高电介质形成的电容器电介质膜和形成在电容器电介质膜上的上电极，电容器电介质膜含有Pb或Bi的第一元素，并且第一元素的浓度峰值从位于第一导电膜和第二导电膜之间的界面中的电容器电介质膜在下电极中扩散。

13. 发明申请

US20080035970A1 Semiconductor device including ferroelectric capacitor 有权
标题翻译：半导体器件包括铁电电容器
公开(公告)号：US20080035970A1
公开(公告)日：2008-02-14
申请号：US11638420
申请日：2006-12-14
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L21/32051 , H01L21/76826 , H01L21/76841 , H01L21/76883 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition AOx2, a second upper electrode made of conductive oxide having a stoichiometric composition BOy1 and an actual composition BOy2, where y2/y1>x2/x1, and a third upper electrode having a composition containing metal of the platinum group; and a multilayer wiring structure formed above the lower ferroelectric capacitor, and including interlevel insulating films and wirings. Abnormal growth and oxygen vacancies can be prevented which may occur when the upper electrode of the ferroelectric capacitor is made of a conductive oxide film having a low oxidation degree and a conductive oxide film having a high oxidation degree.
摘要翻译：半导体器件包括形成在覆盖形成在半导体衬底上的MOS晶体管的下层间绝缘膜上的铁电电容器，包括下电极，氧化物铁电膜，由导电氧化物制成的第一上电极，实施组合物AO x2，由具有化学计量组成BO 1和Y 2的导电氧化物制成的第二上电极和实际组成BO y2，其中y2 / y1> x2 / x1，以及具有包含铂族金属的组成的第三上电极; 以及形成在下层铁电电容器上方的多层布线结构，并且包括层间绝缘膜和布线。可以防止当铁电电容器的上电极由氧化度低的导电氧化物膜和具有高氧化度的导电氧化物膜制成时可能发生异常生长和氧空位。

14. 发明申请

US20050115362A1 Molecular decomposition processes for the synthesis of nanosize metallic powders 有权
标题翻译：用于合成纳米尺寸金属粉末的分子分解过程
公开(公告)号：US20050115362A1
公开(公告)日：2005-06-02
申请号：US10960433
申请日：2004-10-06
申请人： Anil Virkar , Wensheng Wang
发明人： Anil Virkar , Wensheng Wang
IPC分类号： B22F1/00 , B22F9/16 , C01B13/14 , C01F7/02 , C01F17/00 , C01G23/047 , C01G23/053 , C01G25/02 , C01G31/02 , C01G37/02 , C01G37/033 , C04B35/48 , C04B35/50
CPC分类号： B22F1/0018 , B22F9/16 , B82Y30/00 , C01B13/14 , C01F7/02 , C01F17/0043 , C01G23/047 , C01G23/053 , C01G25/02 , C01G31/02 , C01G37/02 , C01G37/033 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2004/64 , C04B35/48 , C04B35/50 , C04B35/6261 , C04B35/62625 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/528
摘要： A method for synthesizing nanosize metallic powders can include providing a metallic precursor. The metallic precursor can include a metal alloy formed having a fugitive constituent and a target metal. The fugitive constituent and target metal are chosen such that the fugitive constituent can be selectively dissolved or removed by leaching with an appropriate solvent while leaving the target metal undissolved. The fugitive constituent can be leached from the metallic precursor to leave a metallic residue which is a mass of nanosize metallic particles made substantially of the target metal. The nanosize metallic particles can then be recovered from the metallic residue either merely by removing the solvent and/or breaking up the mass of nanosize metallic particles. The disclosed methods allow for a convenient avenue for production of nanosize particles from readily formed materials for use in a wide variety of potential industrial and commercial applications.
摘要翻译：合成纳米尺寸金属粉末的方法可以包括提供金属前体。金属前体可以包括形成具有挥发成分和目标金属的金属合金。选择挥发性成分和目标金属，使得可以通过用合适的溶剂浸出来选择性地溶解或除去挥发成分，同时使目标金属不溶解。可以从金属前体中浸出挥发成分以留下金属残留物，这是一种基本上由目标金属制成的纳米尺寸金属颗粒。然后可以通过除去溶剂和/或分解纳米尺寸金属颗粒的质量，从金属残余物中回收纳米尺寸金属颗粒。所公开的方法允许从用于各种潜在工业和商业应用的容易形成的材料制备纳米尺寸颗粒的方便的途径。

15. 发明授权

US06713808B2 Semiconductor capacitor with diffusion prevention layer 有权
标题翻译：具有扩散防护层的半导体电容器
公开(公告)号：US06713808B2
公开(公告)日：2004-03-30
申请号：US10115208
申请日：2002-04-04
申请人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
发明人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L27/10814 , H01L28/55
摘要： There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.
摘要翻译：提供了具有下电极的电容器，其中第一导电层包含第一金属，第二导电层形成在第一导电层上并且由与第一金属不同的第二金属的金属氧化物金属，并且形成在第二导电层上并且由与第一金属不同的第三金属制成的第三导电层依次形成; 形成在下电极上的电介质层; 并且形成在电容器电介质层上的上电极。

16. 发明授权

US08852961B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08852961B2
公开(公告)日：2014-10-07
申请号：US13468588
申请日：2012-05-10
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/00 , H01L49/02 , H01L21/768 , H01L27/115 , H01L23/00
CPC分类号： H01L21/76832 , H01L21/76802 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L24/05 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/75 , H01L2224/02126 , H01L2224/02166 , H01L2224/05624 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H01L2924/01029 , H01L2924/00
摘要： Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.
摘要翻译：铁电电容器（42）形成在半导体衬底（10）上，然后形成直接覆盖铁电电容器（42）的阻挡膜（46）。之后，形成与强电介质电容器（42）连接的配线（56a等）。此外，在高于布线（56a等）的位置处形成阻挡膜（58）。在形成阻挡膜（46）时，形成膜堆叠，膜叠层包括至少两种具有不同成分的防扩散膜（46a和46b），并防止氢或水的扩散。

17. 发明授权

US08513100B2 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08513100B2
公开(公告)日：2013-08-20
申请号：US13332522
申请日：2011-12-21
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/02
CPC分类号： H01L28/75 , H01L27/1057 , H01L27/11507 , H01L28/56
摘要： In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.
摘要翻译：在半导体器件制造方法中，在优先沿着预定的晶面取向的第一金属膜上形成非晶或微晶金属氧化物膜。之后，通过MOCVD法形成铁电体膜。当形成铁电体膜时，在第一金属膜上形成的金属氧化物膜被还原为第二金属膜，并且铁电体膜形成在第二金属膜上。当形成铁电体膜时，非晶或微晶金属氧化物膜容易均匀地被还原。结果，获得其取向良好的第二金属膜，并且在第二金属膜上形成其取向良好的铁电体膜。在形成铁电体膜之后，在铁电体膜上形成上部电极。

18. 发明授权

US08497537B2 Semiconductor device with ferro-electric capacitor 失效
标题翻译：具有铁电电容器的半导体器件
公开(公告)号：US08497537B2
公开(公告)日：2013-07-30
申请号：US12128088
申请日：2008-05-28
申请人： Wensheng Wang , Ko Nakamura
发明人： Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/02
CPC分类号： H01L21/02107 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.
摘要翻译：半导体器件具有漏电流小的铁电电容，即使在小型化时也具有较少的工艺劣化。半导体器件包括：形成在半导体衬底中的半导体元件; 夹层绝缘膜和具有氢/水分屏蔽功能的下绝缘屏蔽膜，形成覆盖半导体元件的叠层; 形成在下绝缘屏蔽膜上方的导电粘附增强膜; 以及包含形成在导电性粘合增强膜上的下电极的铁电电容器，形成在下电极上的铁电膜，并且设置在俯视图中的下电极内;以及上电极，形成在铁电膜，并且设置在平面图所示的铁电膜内，其中，导电性粘附增强膜具有提高下部电极的附着力和降低铁电体的漏电流的功能。

19. 发明授权

US08373212B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08373212B2
公开(公告)日：2013-02-12
申请号：US11898374
申请日：2007-09-11
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： The semiconductor device has an insulation layer formed over a semiconductor substrate, a conductor plug 46 buried in the insulation layer, a capacitor formed above the insulation layer and the conductor plug and including a lower electrode formed of the first conduction film and the second conduction film formed over the first conduction film and formed of Pt, Pt alloy, Pd or Pd alloy, a capacitor dielectric film formed of a ferroelectric or a high dielectric formed over the lower electrode and an upper electrode formed over the capacitor dielectric film, the capacitor dielectric film contains a first element of Pb or Bi, and the concentration peak of the first element diffused in the lower electrode from the capacitor dielectric film positioning in the interface between the first conduction film and the second conduction film.
摘要翻译：半导体器件具有形成在半导体衬底上的绝缘层，埋在绝缘层中的导体插塞46，形成在绝缘层上方的电容器和导体插头，并且包括由第一导电膜和第二导电膜形成的下电极形成在第一导电膜上并由Pt，Pt合金，Pd或Pd合金形成，由在下电极上形成的铁电或高电介质形成的电容器电介质膜和形成在电容器电介质膜上的上电极，电容器电介质膜含有Pb或Bi的第一元素，并且第一元素的浓度峰值从位于第一导电膜和第二导电膜之间的界面中的电容器电介质膜在下电极中扩散。

20. 发明申请

US20130003256A1 METHOD OF MANUFACTURING A FERROELECTRIC CAPACITOR AND A FERROELECTRIC CAPACITOR 有权
标题翻译：制造电容电容器和电容器的方法
公开(公告)号：US20130003256A1
公开(公告)日：2013-01-03
申请号：US13616009
申请日：2012-09-14
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01G4/008 , B82Y30/00 , B82Y99/00
CPC分类号： H01L27/11507 , H01L28/55 , H01L28/75
摘要： A lower electrode film is formed above a substrate. A ferroelectric film is formed above the lower electrode film. An amorphous intermediate film of a perovskite-type conductive oxide is formed above the ferroelectric film. A first upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the intermediate film. The intermediate film is crystallized by carrying out a first heat treatment in an atmosphere containing an oxidizing gas after the formation of the first upper electrode film. After the first heat treatment, a second upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the first upper electrode film, at a temperature lower than the growth temperature for the first upper electrode film.
摘要翻译：在基板上方形成下电极膜。在下部电极膜的上方形成铁电体膜。在铁电体膜的上方形成钙钛矿型导电氧化物的非晶质中间膜。在中间膜上形成包含选自Pt，Pd，Rh，Ir，Ru和Os中的至少一种金属的氧化物的第一上电极膜。中间膜通过在形成第一上电极膜之后在含有氧化性气体的气氛中进行第一次热处理而结晶。在第一热处理之后，在第一上电极膜上形成包含选自Pt，Pd，Rh，Ir，Ru和Os中的至少一种金属的氧化物的第二上电极膜，其温度低于第一上电极膜的生长温度。

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