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11. 发明授权

US07122856B1 Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide 失效
标题翻译：具有由过渡金属磷化物，砷化物或硫化物制成的阻挡层的电容器
公开(公告)号：US07122856B1
公开(公告)日：2006-10-17
申请号：US09161196
申请日：1998-09-25
申请人： Frank Hintermaier
发明人： Frank Hintermaier
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/60
摘要： The capacitor has a capacitor dielectric formed, in particular, as a high-□-dielectrical or ferroelectrical layer. A barrier layer is formed of a compound of a transition element with phosphorus, sulfur or arsenic. The barrier layer is underneath the capacitor dielectric. The barrier layer is oxygen-impermeable and thus prevents the oxidation of deep structures during high-temperature processes, in particular during the production of the capacitor dielectric.
摘要翻译：电容器具有形成的电容器电介质，特别是形成高电位或铁电层。阻挡层由具有磷，硫或砷的过渡元素的化合物形成。阻挡层位于电容器电介质的下方。阻挡层是不透氧的，因此防止在高温工艺期间深结构的氧化，特别是在制造电容器电介质期间。

12. 发明授权

US06297526B1 Process for producing barrier-free semiconductor memory configurations 有权
标题翻译：用于制造无障碍半导体存储器配置的方法
公开(公告)号：US06297526B1
公开(公告)日：2001-10-02
申请号：US09282097
申请日：1999-03-30
申请人： Frank Hintermaier , Carlos Mazure-Espejo
发明人： Frank Hintermaier , Carlos Mazure-Espejo
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/10808 , H01L27/10852 , H01L27/11517 , H01L28/55
摘要： Process for producing an integrated semiconductor memory configuration, in particular one suited to the use of ferroelectric materials as storage dielectrics, in which a conductive connection between one electrode of a storage capacitor and a selection transistor is not produced until after the storage dielectric has been deposited; and a semiconductor memory configuration produced using the production process.
摘要翻译：用于制造集成半导体存储器配置的方法，特别是适用于使用铁电材料作为存储电介质的集成半导体存储器配置，其中在存储电容器的一个电极和选择晶体管之间的导电连接不被产生，直到存储电介质沉积 ; 以及使用该制造工艺制造的半导体存储器配置。

13. 发明授权

US6126998A Process for producing a ceramic layer containing Bi 有权
标题翻译：含有Bi的陶瓷层的制造方法
公开(公告)号：US6126998A
公开(公告)日：2000-10-03
申请号：US164119
申请日：1998-09-30
申请人： Frank Hintermaier , Carlos Mazure-Espejo
发明人： Frank Hintermaier , Carlos Mazure-Espejo
IPC分类号： B05D7/24 , C01G29/00 , C01G35/00 , C23C18/12 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , B05D3/02
CPC分类号： H01L21/31691 , C23C18/1208
摘要： A process for producing a ceramic layer containing Bi, in particular having ferroelectric, dielectric or superconducting properties, includes using only an organic acid C.sub.n H.sub.2n+1 COOH wherein n=0, 1 or 2 and, where appropriate, water, as a solvent for the precursor containing Bi.
摘要翻译：包含Bi，特别是具有铁电，电介质或超导特性的陶瓷层的方法包括仅使用其中n = 0,1或2的有机酸CnH2n + 1COOH，并且在适当情况下使用水作为溶剂，含有Bi的前体。

14. 发明授权

US06605505B2 Process for producing an integrated semiconductor memory configuration 有权
标题翻译：用于制造集成半导体存储器配置的方法
公开(公告)号：US06605505B2
公开(公告)日：2003-08-12
申请号：US09883011
申请日：2001-06-15
申请人： Frank Hintermaier , Carlos Mazure-Espejo
发明人： Frank Hintermaier , Carlos Mazure-Espejo
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/10808 , H01L27/10852 , H01L27/11517 , H01L28/55
摘要： A process for producing an integrated semiconductor memory configuration, in particular one suited to the use of ferroelectric materials as storage dielectrics, in which a conductive connection between one electrode of a storage capacitor and a selection transistor is not produced until after the storage dielectric has been deposited; and a semiconductor memory configuration produced using the production process.
摘要翻译：一种用于制造集成半导体存储器配置的方法，特别是适合于使用铁电材料作为存储电介质的方法，其中在存储电容器的一个电极和选择晶体管的一个电极之间的导电连接直到存储电介质已经被存放以及使用该制造工艺制造的半导体存储器配置。

15. 发明授权

US06527848B2 Complex of an element of transition group IV or V for forming an improved precursor combination 有权
标题翻译：用于形成改进的前体组合的过渡组IV或V的元素的复合物
公开(公告)号：US06527848B2
公开(公告)日：2003-03-04
申请号：US09867291
申请日：2001-05-29
申请人： Frank Hintermaier , Ralf Metzger , Christoph Werner
发明人： Frank Hintermaier , Ralf Metzger , Christoph Werner
IPC分类号： C09K300
CPC分类号： C07F9/005 , C23C16/405
摘要： A new complex of an element of transition group IV or V is provided for forming an improved precursor combination for use in chemical vapor deposition (CVD). This complex dispenses with an alkoxide ligand having an &agr; proton, so that hydrolysis of the complex no longer liberates a reducing agent.
摘要翻译：提供过渡组IV或V元素的新配合物，用于形成用于化学气相沉积（CVD）的改进的前体组合。该络合物不含有具有α质子的醇盐配体，因此络合物的水解不再释放还原剂。

16. 发明授权

US06258153B1 Device for the deposition of substances 有权
标题翻译：物质沉积装置
公开(公告)号：US06258153B1
公开(公告)日：2001-07-10
申请号：US09335561
申请日：1999-06-18
申请人： Frank Hintermaier
发明人： Frank Hintermaier
IPC分类号： B01D800
CPC分类号： C23C16/4412 , Y10S55/15
摘要： The device enables the deposition of substances from a gas phase. The device has a deposition chamber with at least one inner wall that is maintained at a deposition temperature for the deposition of the substances. A delivery end of a feed line extends to or into the deposition chamber. The substances to be deposited in the deposition chamber are delivered in gas form via the feed line. The feed has a transport temperature above the deposition temperature. This transport temperature is selected such that premature deposition of the substances inside the feed is prevented. A thermal insulation is formed between the feed and the inner wall of the deposition chamber. Any cooling of the feed toward its delivery end down to the deposition temperature is thereby prevented.
摘要翻译：该装置能够从气相沉积物质。该装置具有至少一个内壁的沉积室，该内壁保持在用于沉积物质的沉积温度。进料管的输送端延伸到沉积室中或进入沉积室。沉积在沉积室中的物质通过进料管线以气体形式输送。进料的输送温度高于沉积温度。选择该输送温度，以防止物料在进料内的过早沉积。在沉积室的进料和内壁之间形成绝热。从而防止了将进料朝向其输送端冷却到沉积温度。

17. 发明授权

US6120846A Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积法选择性沉积铋基铁电薄膜的方法
公开(公告)号：US6120846A
公开(公告)日：2000-09-19
申请号：US996575
申请日：1997-12-23
申请人： Frank Hintermaier , Bryan Hendrix , Jeff Roeder , Peter Van Buskirk , Thomas H. Baum
发明人： Frank Hintermaier , Bryan Hendrix , Jeff Roeder , Peter Van Buskirk , Thomas H. Baum
IPC分类号： C23C16/04 , C23C16/40 , H01B3/12 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/8246 , H01L27/105 , B05D5/00 , C23C16/00
CPC分类号： C23C16/04 , C23C16/40 , H01L21/31691
摘要： A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
摘要翻译：描述了通过选择性化学气相沉积在基底上选择性沉积铋基铁电薄膜的方法。沉积过程中的选择性通过选择确保某些区域中高铋沉积效率的底物 - 前体组合，并结合特定工艺参数在其它区域中具有低铋沉积效率来实现。

18. 发明授权

US6100187A Method of producing a barrier layer in a semiconductor body 失效
标题翻译：在半导体本体中制造阻挡层的方法
公开(公告)号：US6100187A
公开(公告)日：2000-08-08
申请号：US106237
申请日：1998-06-29
申请人： Frank Hintermaier , Carlos Mazure-Espejo
发明人： Frank Hintermaier , Carlos Mazure-Espejo
IPC分类号： H01L27/108 , H01L21/02 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L21/44
CPC分类号： H01L28/60 , H01L21/76838
摘要： A barrier layer is formed on the contact plug of the semiconductor body. The barrier layer prevents oxidation of the contact plug. The barrier layer is produced by chemically reacting a prestructured metallic transition material with one or more reaction partners.
摘要翻译：在半导体本体的接触插塞上形成阻挡层。阻挡层防止接触塞的氧化。通过使预结构的金属过渡材料与一个或多个反应配对物化学反应来制备阻挡层。

19. 发明授权

US6037002A Process for producing thin films of oxide ceramic 失效
标题翻译：生产氧化陶瓷薄膜的方法
公开(公告)号：US6037002A
公开(公告)日：2000-03-14
申请号：US115169
申请日：1998-07-14
申请人： Frank Hintermaier
发明人： Frank Hintermaier
IPC分类号： C23C16/40 , B05D3/06
CPC分类号： C23C16/409 , C23C16/40
摘要： A process for producing thin films of oxide ceramic by deposition of metal oxides on a surface. An accelerator is added to initiate oxidation of organometallic precursors.
摘要翻译：一种通过在表面上沉积金属氧化物来生产氧化物陶瓷薄膜的方法。添加促进剂以引发有机金属前体的氧化。

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