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11. 发明申请

US20120115274A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120115274A1
公开(公告)日：2012-05-10
申请号：US13355541
申请日：2012-01-22
申请人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置抑制在将微波能量耦合到沉积物质的窗口或其它微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

12. 发明授权

US06723421B2 Semiconductor with coordinatively irregular structures 失效
标题翻译：具有协调不规则结构的半导体
公开(公告)号：US06723421B2
公开(公告)日：2004-04-20
申请号：US09971881
申请日：2001-10-05
申请人： Stanford R. Ovshinsky , Boil Pashmakov , David V. Tsu
发明人： Stanford R. Ovshinsky , Boil Pashmakov , David V. Tsu
IPC分类号： B32B326
CPC分类号： C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L29/12 , H01L29/1604 , H01L31/03682 , H01L31/03762 , H01L31/1816 , H01L31/202 , H01L31/208 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10T428/249956 , Y10T428/249957 , Y10T428/249961 , Y10T428/249967 , Y10T428/249979
摘要： A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.
摘要翻译：非单晶半导体材料包括以失真化学键合为特征的协调不规则结构，尺寸降低和新颖的电子性能。形成材料的方法允许协调不规则结构的尺寸，浓度和空间分布的变化。可以通过控制协调不规则结构的特性来改变材料的电子特性。

13. 发明授权

US5912839A Universal memory element and method of programming same 失效
标题翻译：通用存储元件和编程方法相同
公开(公告)号：US5912839A
公开(公告)日：1999-06-15
申请号：US102887
申请日：1998-06-23
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G11C11/34 , G11C11/56 , G11C16/02 , G11C16/10 , H01L27/24 , G11C11/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C11/54 , G11C2013/0078 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.
摘要翻译：编程方法Ovonic存储器多数位数字多位存储元件，以及其用于神经网络和数据存储的方法。通过施加不足以将存储元件从所述高电阻状态切换到所述低电阻状态的能量脉冲来编程所述装置，但是足以修改所述存储材料，使得附加能量脉冲的累积导致存储元件从所述高电阻状态到所述低电阻状态。

14. 发明申请

US20070235709A1 Memory element with improved contacts 有权
标题翻译：记忆元素改善了接触
公开(公告)号：US20070235709A1
公开(公告)日：2007-10-11
申请号：US11394433
申请日：2006-04-01
申请人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey Kostylev , Stanford Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

15. 发明授权

US07529123B2 Method of operating a multi-terminal electronic device 有权
标题翻译：操作多终端电子设备的方法
公开(公告)号：US07529123B2
公开(公告)日：2009-05-05
申请号：US11451740
申请日：2006-06-13
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G11C11/21
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/144
摘要： A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state. The two structural states may include different volume fractions of a crystalline phase and an amorphous phase.
摘要翻译：一种操作多终端电子设备的方法。该装置包括与三个或更多个电气端子电连通的活性材料。活性材料能够经历从一个状态到另一个状态的转变，其中两个状态的阻力不同。该方法包括在设备的一对端子之间提供能量的步骤，其中所提供的能量影响与设备的一个或多个其他端子相邻的活性材料的状态的变化。在一个实施例中，能量被施加在三端子装置的第一端子和第二端子之间，并且与第三端子相邻的活性材料的状态被改变。在一个实施例中，能量以电能的形式施加，并且活性材料是经历从一个结构状态到另一个结构状态的转变的相变材料。两个结构状态可以包括结晶相和非晶相的不同体积分数。

16. 发明授权

US07440990B2 Methods of factoring and modular arithmetic 有权
标题翻译：分解和模数运算方法
公开(公告)号：US07440990B2
公开(公告)日：2008-10-21
申请号：US10726785
申请日：2003-12-03
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G06F7/38
CPC分类号： G11C13/0004 , G06F7/49 , G11C11/56 , G11C11/5678 , G11C13/004
摘要： A method of factoring numbers in a non-binary computation scheme and more particularly, a method of factoring numbers utilizing a digital multistate phase change material. The method includes providing energy in an amount characteristic of the number to be factored to a phase change material programmed according to a potential factor of the number. The programming strategy provides for the setting of the phase change material once for each time a multiple of a potential factor is present in the number to be factored. By counting the number of multiples and assessing the state of the phase change material upon execution of the method, a determination of whether a potential factor is indeed a factor may be made. A given volume of phase change material may be reprogrammed for different factors or separate volumes of phase change material may be employed for different factors. Parallel factorization over several potential factors may be achieved by combining separate volumes of phase change material programmed according to different potential factors. Methods of addition and computing congruences in a modular arithmetic system are also included.
摘要翻译：一种在非二进制计算方案中分解数字的方法，更具体地说，涉及使用数字多态相变材料分解数字的方法。该方法包括将根据该数量的潜在因素编程的相变材料的要素数量的特征量的能量提供给该相变材料。编程策略提供了相变材料的设置，每次在要考虑的数量中存在潜在因子的倍数。通过计算倍数并在执行该方法时评估相变材料的状态，可以确定潜在因素是否确实是一个因素。可以对于不同的因素对给定体积的相变材料进行重新编程，或者可以针对不同的因素采用单独体积的相变材料。可以通过组合根据不同潜在因素编程的不同体积的相变材料来实现几个潜在因素的并行分解。还包括在模块化算法系统中添加和计算一致性的方法。

17. 发明申请

US20120040518A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
公开(公告)号：US20120040518A1
公开(公告)日：2012-02-16
申请号：US13284912
申请日：2011-10-30
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/20
CPC分类号： C23C16/452 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

18. 发明授权

US08048782B1 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08048782B1
公开(公告)日：2011-11-01
申请号：US12855631
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

19. 发明授权

US07186998B2 Multi-terminal device having logic functional 有权
标题翻译：具有逻辑功能的多终端设备
公开(公告)号：US07186998B2
公开(公告)日：2007-03-06
申请号：US10761022
申请日：2004-01-20
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： H01L29/04 , H01L29/06 , H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , G11C2213/53 , H01L45/06 , H01L45/1206 , H01L45/144
摘要： A multi-terminal logic device. The device includes a phase change material having crystalline and amorphous states in electrical communication with three or more electrical terminals. The phase change material is able to undergo reversible transformations between amorphous and crystalline states in response to applied electrical energy where the amorphous and crystalline states show measurably distinct electrical resistances. Electrical energy in the form of current or voltage pulses applied between a pair of terminals influences the structural state and measured electrical resistance between the terminals. In the instant devices, independent input signals are provided between different pairs of terminals and the output is measured as the resistance between yet another pair of terminals. Logic functionality is achieved through relationships between the applied input signals and the measured output resistance where the relationship is governed by the effect of the input signals on the structural state and electrical resistance of the phase change material. Logic values may be associated with the crystalline and amorphous states of the phase change material or the measured resistance between a pair of terminals.
摘要翻译：多终端逻辑器件。该装置包括具有与三个或更多个电端子电连通的晶体和无定形状态的相变材料。相变材料能够响应于所施加的电能在无定形和结晶状态之间经历可逆变换，其中非晶态和结晶态显示出可测量的不同电阻。施加在一对端子之间的电流或电压脉冲形式的电能影响端子之间的结构状态和测量的电阻。在即时设备中，在不同的终端对之间提供独立的输入信号，并且输出被测量为另一对终端之间的电阻。逻辑功能通过所施加的输入信号与测量的输出电阻之间的关系实现，其中该关系由输入信号对相变材料的结构状态和电阻的影响所决定。逻辑值可能与相变材料的晶态和非晶状态或一对端子之间测得的电阻相关。

20. 发明授权

US06967344B2 Multi-terminal chalcogenide switching devices 有权
标题翻译：多端硫属化物开关器件
公开(公告)号：US06967344B2
公开(公告)日：2005-11-22
申请号：US10384994
申请日：2003-03-10
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C2213/51 , H01L45/04 , H01L45/1206 , H01L45/1213 , H01L45/1233 , H01L45/144
摘要： Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and/or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括可在电阻状态和导电状态之间切换的硫族化物材料的多端子电子开关器件。这些设备包括第一终端，第二终端和控制终端。将控制信号施加到控制端子，调制第一和第二端子之间的硫族化物材料的导电性和/或将第一和第二端子之间的硫族化物材料从电阻状态切换到导通状态所需的阈值电压。这些设备可以用作电路和网络中的互连设备或信号提供设备。

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