专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07791024B2 Method of measuring dimension of film constituting element and apparatus therefor 有权
标题翻译：测量薄膜构成元件尺寸的方法及其装置
公开(公告)号：US07791024B2
公开(公告)日：2010-09-07
申请号：US12196440
申请日：2008-08-22
申请人： Toyoo Miyajima , Yasutoshi Kotaka
发明人： Toyoo Miyajima , Yasutoshi Kotaka
IPC分类号： H01J37/26
CPC分类号： G01B15/025
摘要： A method of evaluating an element that includes the step of preparing a thin evaluation sample including a first portion in which a first layer containing a first material and a second layer containing a second material are laminated, a second portion containing the first material, and a third portion containing the second material; and calculating the thickness of the first layer in the first portion.
摘要翻译：一种评价元件的方法，包括准备薄层评估样本的步骤，所述薄评估样本包括第一部分，其中包含第一材料的第一层和包含第二材料的第二层的第一层，包含第一材料的第二部分和包含第二材料的第三部分; 并计算第一部分中的第一层的厚度。

12. 发明申请

US20130083568A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20130083568A1
公开(公告)日：2013-04-04
申请号：US13555420
申请日：2012-07-23
申请人： Kozo MAKIYAMA , Naoya Okamoto , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
发明人： Kozo MAKIYAMA , Naoya Okamoto , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
IPC分类号： H01L29/78 , H02M5/458 , H01L21/336
CPC分类号： H01L29/408 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L29/7787 , H02M7/537
摘要： An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.
摘要翻译： HEMT在SiC衬底上包括化合物半导体层，具有开口并覆盖化合物半导体层的氮化硅（SiN）保护膜和形成在化合物半导体层上的栅电极以堵塞开口。在保护膜中，从开口侧面突出的突出部形成在下层部6a。

13. 发明授权

US07859800B2 Magneto-resistive effect element magnetic disk device having magneto-resistive effect film and method of forming a CPP-type magneto-resistive effect element having a soft magnetic layer composed of columnar crystal 失效
标题翻译：具有磁阻效应膜的磁阻效应元件磁盘器件和形成具有由柱状晶体构成的软磁性层的CPP型磁阻效应元件的方法
公开(公告)号：US07859800B2
公开(公告)日：2010-12-28
申请号：US11589110
申请日：2006-10-30
申请人： Toyoo Miyajima , Mineharu Tsukada
发明人： Toyoo Miyajima , Mineharu Tsukada
IPC分类号： G11B5/39 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B2005/3996 , Y10T29/49043
摘要： A magneto-resistive effect element is provided with a first soft magnetic layer, a magneto-resistive effect film formed directly on the first soft magnetic layer. and a second soft magnetic layer formed on the magneto-resistive effect film. The magneto-resistive effect element is configured as allowing electric current to flow in the thickness-wise direction. The first soft magnetic layer is composed of columnar crystals. The magneto-resistive effect film has an anti-ferromagnetic layer. The anti-ferromagnetic layer is formed directly on the first soft magnetic layer.
摘要翻译：磁阻效应元件设置有第一软磁层，直接形成在第一软磁层上的磁阻效应膜。以及形成在磁阻效应膜上的第二软磁层。磁阻效应元件被配置为允许电流在厚度方向上流动。第一软磁层由柱状晶体组成。磁阻效应膜具有反铁磁性层。反铁磁层直接形成在第一软磁层上。

14. 发明授权

US09269782B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09269782B2
公开(公告)日：2016-02-23
申请号：US13606542
申请日：2012-09-07
申请人： Masahito Kanamura , Toyoo Miyajima , Toshihiro Ohki
发明人： Masahito Kanamura , Toyoo Miyajima , Toshihiro Ohki
IPC分类号： H01L29/423 , H01L29/66 , H01L29/778 , H01L29/20 , H03F1/32 , H01L21/28
CPC分类号： H01L29/42364 , H01L21/28264 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H03F1/3247
摘要： A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.
摘要翻译：一种半导体器件，包括：设置在基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的下绝缘膜; 设置在下绝缘膜上的p型导电氧化物膜; 设置在氧化膜上的上绝缘膜; 以及设置在所述上绝缘膜上的栅电极，其中所述栅电极下的下绝缘膜具有凹陷部。

15. 发明授权

US08791465B2 Compound semiconductor device and manufacturing therefor 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US08791465B2
公开(公告)日：2014-07-29
申请号：US13549655
申请日：2012-07-16
申请人： Naoya Okamoto , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
发明人： Naoya Okamoto , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
IPC分类号： H01L21/48 , H01L21/285 , H01L29/423 , H01L29/47 , H01L29/872 , H01L29/778 , H01L29/20 , H01L29/43 , H01L23/31 , H01L23/29
CPC分类号： H01L21/31144 , H01L21/28 , H01L21/28581 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/432 , H01L29/475 , H01L29/7786 , H01L29/7787 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.
摘要翻译：化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

16. 发明申请

US20130082307A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20130082307A1
公开(公告)日：2013-04-04
申请号：US13549655
申请日：2012-07-16
申请人： Naoya OKAMOTO , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
发明人： Naoya OKAMOTO , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
IPC分类号： H01L29/808 , H01L21/283
CPC分类号： H01L21/31144 , H01L21/28 , H01L21/28581 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/432 , H01L29/475 , H01L29/7786 , H01L29/7787 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.
摘要翻译：化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

17. 发明申请

US20070297100A1 Magneto-resistive effect element and magnetic disk device 失效
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20070297100A1
公开(公告)日：2007-12-27
申请号：US11589110
申请日：2006-10-30
申请人： Toyoo Miyajima , Mineharu Tsukada
发明人： Toyoo Miyajima , Mineharu Tsukada
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B2005/3996 , Y10T29/49043
摘要： An alignment control film is formed on an alumina film by sputtering. A Ti film, a Ta film, a Ru film, a MgO film or the like is formed as the alignment control film. A lower shield layer is formed on the alignment control film. Crystal grains composing the lower shield layer will be of a columnar crystal grains. The lower shield layer will have the (111) surface exposed to the surface thereof when a Ti film, a Ta film or a Ru film is formed as the alignment control film, whereas the lower shield layer will have the (100) surface exposed to the surface thereof when a MgO film is formed as the alignment control film. A GMR film is then formed on the lower shield layer. The GMR film is formed by first allowing an anti-ferromagnetic film to epitaxially grow on the lower shield layer. The anti-ferromagnetic film will have also the (111) surface or the (100) surface reflecting the crystal structure of the lower shield layer.
摘要翻译：通过溅射在氧化铝膜上形成取向控制膜。形成Ti膜，Ta膜，Ru膜，MgO膜等作为取向控制膜。在取向控制膜上形成下屏蔽层。构成下屏蔽层的晶粒将是柱状晶粒。当形成Ti膜，Ta膜或Ru膜作为取向控制膜时，下屏蔽层具有暴露于其表面的（111）表面，而下屏蔽层将（100）表面暴露于当形成MgO膜时作为取向控制膜的表面。然后在下屏蔽层上形成GMR膜。 GMR膜通过首先使反铁磁膜在下屏蔽层上外延生长而形成。反铁磁膜还具有（111）表面或（100）表面反映下屏蔽层的晶体结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式