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    • 15. 发明授权
    • Laminated film
    • 层压膜
    • US08137788B2
    • 2012-03-20
    • US11663948
    • 2005-09-26
    • Yasushi TakadaMasato YanagibashiMasato UshijimaYutaka Harada
    • Yasushi TakadaMasato YanagibashiMasato UshijimaYutaka Harada
    • B32B7/02B32B27/08B32B27/18B32B27/26B32B27/28
    • C08J7/047C08J2367/02C08J2433/00Y10T428/24355Y10T428/25Y10T428/26Y10T428/265Y10T428/269Y10T428/28Y10T428/31504Y10T428/31551Y10T428/31565Y10T428/31786Y10T428/31797Y10T428/31855Y10T428/31935
    • A laminated film including a thermoplastic resin film and an laminated layer that is formed on at least one side of the thermoplastic resin film and comprises (A) a composition, (B) an epoxy crosslinking agent and (C) an acrylic resin having an alkyl chain of 18 to 25 carbon atoms is characterized in that the composition (A) is a composition containing at least a polythiophene and a polyanion and/or a composition containing a polythiophene derivative and a polyanion, the laminated layer contains 15 to 100 parts by weight of the acrylic resin (C) having an alkyl chain of 18 to 25 carbon atoms based on 100 parts by weight of the sum of the composition (A) and the crosslinking agent (B) and/or its reaction product, at least one side of the laminated film has a three-dimensional average surface roughness (SRa) of 3 to 50 nm, and the laminated film contains less than 10 internal contaminant particles with an average particle size of at least 100 μm per 1 m2, so that it has high level of electrical conductivity, good releasability and water resistance, and also has oligomer precipitation-preventing properties during heating.
    • 一种层压膜,包括热塑性树脂膜和层压层,所述层压层形成在所述热塑性树脂膜的至少一侧上,并且包含(A)组合物,(B)环氧交联剂和(C)具有烷基 18至25个碳原子的链的特征在于,组合物(A)是至少含有聚噻吩和聚阴离子的组合物和/或含有聚噻吩衍生物和聚阴离子的组合物,层叠层含有15〜100重量份 的丙烯酸树脂(C),基于100重量份的组合物(A)和交联剂(B)和/或其反应产物的总和,具有18至25个碳原子的烷基链的丙烯酸树脂(C)和/或其反应产物,至少一个侧面 层叠膜的三维平均表面粗糙度(SRa)为3〜50nm,层叠膜含有少于10个平均粒径为1m 2以上的平均粒径为100μm以上的内部污染物粒子, 高水平的el 导电性,良好的脱模性和耐水性,并且在加热时也具有低聚物防止沉淀的性质。
    • 16. 发明授权
    • Capacitive electromagnetic flowmeter
    • 电容式电磁流量计
    • US07950292B2
    • 2011-05-31
    • US12447690
    • 2007-08-03
    • Yutaka HaradaIchiro MitsutakeKouji OkudaTaka InoueTetsuya Kajita
    • Yutaka HaradaIchiro MitsutakeKouji OkudaTaka InoueTetsuya Kajita
    • G01F1/58G01R27/26
    • G01F1/60G01F1/588
    • In a constant current circuit, a constant current is caused to flow through a resistor, thereby causing a constant voltage to occur across the resistor. This constant voltage is then superimposed on an output signal of an operational amplifier that is to be fed back to the drain of a field effect transistor, thereby maintaining the same potential in an AC manner between the output terminal of the operational amplifier and the drain of the field effect transistor. In this way, the gate and drain of the field effect transistor is caused to exhibit the same potential in an AC manner, so that no current will occur through the stray capacitance between the gate and drain of the field effect transistor. As a result, similarly to a case of using a feedback capacitor, the input impedance of the field effect transistor can be raised.
    • 在恒流电路中,使恒定电流流过电阻器,从而在电阻器两端产生恒定的电压。 然后将该恒定电压叠加在要反馈到场效应晶体管的漏极的运算放大器的输出信号上,从而在运算放大器的输出端和漏极之间以AC方式保持相同的电位 场效应晶体管。 以这种方式,使场效应晶体管的栅极和漏极以交流方式呈现相同的电位,使得不会通过场效应晶体管的栅极和漏极之间的杂散电容发生电流。 结果,与使用反馈电容器的情况类似,可以提高场效应晶体管的输入阻抗。
    • 17. 发明授权
    • Superconducting device
    • 超导装置
    • US5442196A
    • 1995-08-15
    • US201410
    • 1994-02-24
    • Toshikazu NishinoMutsuko MiyakeUshio KawabeYutaka HaradaMasaaki AokiMikio Hirano
    • Toshikazu NishinoMutsuko MiyakeUshio KawabeYutaka HaradaMasaaki AokiMikio Hirano
    • H01L21/82H01L39/22
    • H01L39/228H01L21/82
    • A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
    • 一对超导电极形成为在其间插入半导体,并且通过绝缘膜在半导体上形成控制电极,以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定,从而以高精度稳定电极间距离,以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中,通过在半导体层中提供不同的杂质分布来增加增益。
    • 18. 发明授权
    • Superconducting device
    • 超导装置
    • US5126801A
    • 1992-06-30
    • US412201
    • 1989-09-25
    • Toshikazu NishinoMutsuko MiyakeUshio KawabeYutaka HaradaMasaaki AokiMikio Hirano
    • Toshikazu NishinoMutsuko MiyakeUshio KawabeYutaka HaradaMasaaki AokiMikio Hirano
    • H01L21/82H01L39/22
    • H01L39/228H01L21/82
    • A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. In an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is incredible by furnishing a varied impurity distribution in the semiconductor layer.
    • 一对超导电极形成为在其间插入半导体,并且通过绝缘膜在半导体上形成控制电极,以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定,从而以高精度稳定电极间距离,以提高器件特性的均匀性。 在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中,通过在半导体层中提供不同的杂质分布,增益是令人难以置信的。
    • 20. 发明申请
    • EDDY-CURRENT FLAW DETECTION METHOD, EDDY-CURRENT FLAW DETECTION DEVICE AND EDDY-CURRENT FLAW DETECTION PROBE
    • EDDY-CURRENT FLAW检测方法,EDDY-CURRENT FLAW检测装置和EDDY-CURRENT FLAW检测探头
    • US20100231210A1
    • 2010-09-16
    • US12679222
    • 2008-08-29
    • Yutaka HaradaJunri ShimoneKotaro Maeda
    • Yutaka HaradaJunri ShimoneKotaro Maeda
    • G01N27/82
    • G01N27/904
    • An eddy-current flaw detection device comprises a magnetic element group of which a specified number of magnetic elements are evenly spaced in each of at least two rows around the surface of a column shaped casing that can be inserted into a conductive pipe, with one row being located at a different position from the other row by ½ the even spacing in the row direction, and switching circuits for switching the magnetic elements in the respective row at time-division. The elements of one row function as magnetic field excitation elements, the elements of the other row function as magnetic field detection elements, and the eddy-current flaw detection device performs eddy-current flaw detection of the conductive pipe by detecting magnetic field excited by magnetic field excitation element by two magnetic field detection elements located at different positions from the magnetic field excitation elements by 3/2 the even spacing.
    • 涡流探伤装置包括磁性元件组,其中指定数量的磁性元件在能够插入导电管的表面上的至少两排中的至少两排中均匀间隔开,其中一列 位于与行的方向上的偶数距离的另一个位置不同的位置,以及分时地切换各行中的磁性元件的开关电路。 一行的元件用作磁场激励元件,另一列的元件用作磁场检测元件,并且涡流探伤装置通过检测由磁场激发的磁场来执行导电管的涡流探伤 场激励元件由位于与磁场激励元件不同的位置的两个磁场检测元件乘以3/2的偶数间隔。