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11. 发明授权

US08592996B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08592996B2
公开(公告)日：2013-11-26
申请号：US12825783
申请日：2010-06-29
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H01L23/48
CPC分类号： H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/325 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48624 , H01L2224/73265 , H01L2224/8384 , H01L2224/92 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10272 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01026
摘要： A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.
摘要翻译：一种半导体器件，其中安装在衬底上的由Si或Si基团材料制成的半导体元件，所述半导体元件安装在所述衬底上，并且所述半导体元件经由形成在所述半导体元件上的氧化物膜结合到银接合材料。使用包含平均粒径为1nm〜50nm的氧化银粒子和有机还原剂的接合材料在空气中接合，这对半导体元件上的氧化物具有高的接合强度。

12. 发明授权

US08513534B2 Semiconductor device and bonding material 失效
公开(公告)号：US08513534B2
公开(公告)日：2013-08-20
申请号：US12379644
申请日：2009-02-26
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H05K1/03
CPC分类号： H01L23/488 , C04B37/026 , C04B2237/06 , C04B2237/124 , C04B2237/125 , C04B2237/368 , H01L23/047 , H01L23/24 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/83 , H01L24/84 , H01L25/072 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/29347 , H01L2224/32225 , H01L2224/325 , H01L2224/371 , H01L2224/37147 , H01L2224/37599 , H01L2224/40091 , H01L2224/40225 , H01L2224/45124 , H01L2224/48227 , H01L2224/49113 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83205 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H05K1/09 , H05K3/321 , H05K2203/1131 , H01L2924/00 , H01L2924/00012
摘要： The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 μm, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material.

13. 发明授权

US08008772B2 Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法，复合金属体及其制造方法
公开(公告)号：US08008772B2
公开(公告)日：2011-08-30
申请号：US12019789
申请日：2008-01-25
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/29347 , H01L2224/32225 , H01L2224/325 , H01L2224/371 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
摘要翻译：具有通过包含Cu的接合层连接半导体元件和Cu或Ni电极的结构的半导体器件，并且Cu键合层和Cu或Ni电极彼此扩散接合。通过使用含有平均粒径为1nm〜50μm的Cu氧化物的颗粒的接合材料和包含有机材料的还原剂，通过在还原气氛中导电接合而形成接合层，从而对Ni或铜电极。

14. 发明申请

US20100195292A1 ELECTRONIC MEMBER, ELECTRONIC PART AND MANUFACTURING METHOD THEREFOR 失效
标题翻译：电子部件，电子部件及其制造方法
公开(公告)号：US20100195292A1
公开(公告)日：2010-08-05
申请号：US12696590
申请日：2010-01-29
申请人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda
发明人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda
IPC分类号： H05K7/00 , H01B1/08 , H01B1/02 , H01B1/12 , H05K1/02 , H05K1/09 , B05D5/12 , C25D11/34
CPC分类号： H05K3/32 , C25D11/34 , H01L23/3142 , H01L23/481 , H01L23/49582 , H01L23/49811 , H01L23/49833 , H01L23/49866 , H01L23/50 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/50 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L33/62 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05639 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/16145 , H01L2224/16225 , H01L2224/29111 , H01L2224/29139 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48105 , H01L2224/48177 , H01L2224/48227 , H01L2224/48247 , H01L2224/73204 , H01L2224/73265 , H01L2224/81009 , H01L2224/81193 , H01L2224/81201 , H01L2224/81395 , H01L2224/81486 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2224/85205 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/351 , H05K1/185 , H05K3/244 , H05K2201/10636 , H05K2201/10674 , H05K2203/0315 , H05K2203/1157 , H05K2203/121 , Y02P70/611 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/053 , H01L2224/83205
摘要： When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer.
摘要翻译：当氧化银还原成银时，在氧化银内形成大量的金属银芯。然后，氧化银被以中空的方式被还原，同时保持原有的外部结构。结果，产生的银的曲率变大。利用这种微观粒子实施机制，即使氧化银不是颗粒状构造而是紧密堆叠的层状结构，也可实现粘结。在本发明中，提供了一种电子部件，其包括用于输入/输出电信号的电极或用于建立与电信号的连接的连接端子，其中电极或连接端子的最上表面是银 - 氧化层。

15. 发明申请

US20080237851A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, COMPOSITE METAL BODY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法，复合金属体及其制造方法
公开(公告)号：US20080237851A1
公开(公告)日：2008-10-02
申请号：US12019789
申请日：2008-01-25
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H01L23/488 , H01L21/44
CPC分类号： H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/29347 , H01L2224/32225 , H01L2224/325 , H01L2224/371 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
摘要翻译：具有通过包含Cu的接合层连接半导体元件和Cu或Ni电极的结构的半导体器件，并且Cu键合层和Cu或Ni电极彼此扩散接合。通过使用含有平均粒径为1nm〜50μm的Cu氧化物的颗粒的接合材料和包含有机材料的还原剂，通过在还原气氛中导电接合而形成接合层，由此对Ni或铜电极。

16. 发明申请

US20080160183A1 CONDUCTIVE SINTERED LAYER FORMING COMPOSITION AND CONDUCTIVE COATING FILM FORMING METHOD AND BONDING METHOD USING THE SAME 审中-公开
标题翻译：导电烧结层形成组合物和导电涂膜形成方法和使用其的粘结方法
公开(公告)号：US20080160183A1
公开(公告)日：2008-07-03
申请号：US11965810
申请日：2007-12-28
申请人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda , Hiroshi Hozoji
发明人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda , Hiroshi Hozoji
IPC分类号： H01B1/08 , B05D5/12 , B22F7/04
CPC分类号： H01B1/02 , B22F7/04 , H01B1/08 , H01L23/3735 , H01L23/3737 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/91 , H01L2224/27334 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/2919 , H01L2224/29339 , H01L2224/29344 , H01L2224/29355 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/32225 , H01L2224/32245 , H01L2224/37147 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/8484 , H01L2224/85205 , H01L2224/8584 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/2076 , H05K1/097 , H05K3/321 , H05K2201/0224 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/83205 , H01L2924/00012
摘要： There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles.
摘要翻译：提供一种导电烧结层形成组合物和导电烧结层形成方法，其可以通过烧结具有有机物质的金属纳米颗粒的烧结来加速烧结或接合的过程，从而降低加热温度并缩短加热时间。形成导电烧结层的组合物可以通过利用颗粒可以通过将氧化银与涂覆有机物质的金属颗粒混合并且与烧结相比具有1nm至5μm的颗粒尺寸而在低温下烧结的现象获得物质。本发明的导电性烧结层形成用组合物的特征在于，其含有表面被有机物质覆盖，粒径为1nm〜5μm的金属粒子和氧化银粒子。

17. 发明授权

US08840811B2 Electrically conductive bonding material, method of bonding with the same, and semiconductor device bonded with the same 有权
标题翻译：导电接合材料，与其接合的方法和与其接合的半导体器件
公开(公告)号：US08840811B2
公开(公告)日：2014-09-23
申请号：US12768778
申请日：2010-04-28
申请人： Yuusuke Yasuda , Toshiaki Morita , Eiichi Ide , Teiichi Inada
发明人： Yuusuke Yasuda , Toshiaki Morita , Eiichi Ide , Teiichi Inada
IPC分类号： H01B1/00 , H01B1/12 , H01L23/15 , C22C1/05 , H01L23/14 , H01L23/373 , H01L23/488 , H01L23/13 , H01L23/498 , B22F1/00 , H01L23/492 , H01B1/22 , H01L25/07 , H01L23/34 , B23K20/00 , B23K28/00 , B05D5/12 , H01L23/24 , H01L21/56 , H01L23/10 , H01L23/00 , H01L23/495 , H01L23/31 , H01L23/049
CPC分类号： B22F1/0074 , C22C1/05 , H01B1/22 , H01L21/565 , H01L23/049 , H01L23/10 , H01L23/13 , H01L23/142 , H01L23/15 , H01L23/24 , H01L23/3107 , H01L23/3121 , H01L23/34 , H01L23/3735 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L23/498 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/05147 , H01L2224/05639 , H01L2224/05655 , H01L2224/27334 , H01L2224/29005 , H01L2224/2901 , H01L2224/29078 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29163 , H01L2224/29164 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/29181 , H01L2224/29184 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29338 , H01L2224/29339 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29363 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/29371 , H01L2224/29373 , H01L2224/29376 , H01L2224/29378 , H01L2224/29381 , H01L2224/29384 , H01L2224/29387 , H01L2224/29893 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48739 , H01L2224/48755 , H01L2224/48839 , H01L2224/48855 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83065 , H01L2224/83075 , H01L2224/832 , H01L2224/8384 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/15153 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/3511 , H01L2924/0541 , H01L2924/0501 , H01L2924/00014 , H01L2924/01001 , H01L2924/01018 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/2076 , H01L2924/01202 , H01L2224/83205
摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.
摘要翻译：本发明提供一种接合材料和在不施加压力的情况下在较低温度下能够具有较高接合强度的接合界面处的金属接合方法，与平均粒径不大的金属颗粒的接合材料相比超过100nm。一种导电性接合材料，其包含（A）银颗粒，（B）氧化银，和（C）包含不超过30个碳原子的有机材料作为必要组分的分散剂，其中（A）银粉末，（B）氧化银粉末，（C）含有不超过30个碳原子的有机材料的分散剂的含量为99.0〜100重量％。换句话说，不含树脂粘合剂。

18. 发明申请

US20100270515A1 ELECTRICALLY CONDUCTIVE BONDING MATERIAL, METHOD OF BONDING WITH THE SAME, AND SEMICONDUCTOR DEVICE BONDED WITH THE SAME 有权
标题翻译：电导电粘接材料，与其结合的方法以及与其结合的半导体器件
公开(公告)号：US20100270515A1
公开(公告)日：2010-10-28
申请号：US12768778
申请日：2010-04-28
申请人： Yuusuke YASUDA , Toshiaki Morita , Eiichi Ide , Teiichi Inada
发明人： Yuusuke YASUDA , Toshiaki Morita , Eiichi Ide , Teiichi Inada
IPC分类号： H01B1/02 , H01B1/12 , B23K20/00
CPC分类号： B22F1/0074 , C22C1/05 , H01B1/22 , H01L21/565 , H01L23/049 , H01L23/10 , H01L23/13 , H01L23/142 , H01L23/15 , H01L23/24 , H01L23/3107 , H01L23/3121 , H01L23/34 , H01L23/3735 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L23/498 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/05147 , H01L2224/05639 , H01L2224/05655 , H01L2224/27334 , H01L2224/29005 , H01L2224/2901 , H01L2224/29078 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29163 , H01L2224/29164 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/29181 , H01L2224/29184 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29338 , H01L2224/29339 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29363 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/29371 , H01L2224/29373 , H01L2224/29376 , H01L2224/29378 , H01L2224/29381 , H01L2224/29384 , H01L2224/29387 , H01L2224/29893 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48739 , H01L2224/48755 , H01L2224/48839 , H01L2224/48855 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83065 , H01L2224/83075 , H01L2224/832 , H01L2224/8384 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/15153 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/3511 , H01L2924/0541 , H01L2924/0501 , H01L2924/00014 , H01L2924/01001 , H01L2924/01018 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/2076 , H01L2924/01202 , H01L2224/83205
摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.
摘要翻译：本发明提供一种接合材料和在不施加压力的情况下在较低温度下能够具有较高接合强度的接合界面处的金属接合方法，与平均粒径不大的金属颗粒的接合材料相比超过100nm。一种导电性接合材料，其包含（A）银颗粒，（B）氧化银，和（C）包含不超过30个碳原子的有机材料作为必要组分的分散剂，其中（A）银粉末，（B）氧化银粉末，（C）含有不超过30个碳原子的有机材料的分散剂的含量为99.0〜100重量％。换句话说，不含树脂粘合剂。

19. 发明申请

US20130270684A1 POWER MODULE AND LEAD FRAME FOR POWER MODULE 有权
标题翻译：电源模块和电源模块框架
公开(公告)号：US20130270684A1
公开(公告)日：2013-10-17
申请号：US13994417
申请日：2011-12-13
申请人： Yoshinori Negishi , Hiroshi Nakano , Eiichi Ide , Haruo Akahoshi , Motoko Harada , Toshiaki Ishii
发明人： Yoshinori Negishi , Hiroshi Nakano , Eiichi Ide , Haruo Akahoshi , Motoko Harada , Toshiaki Ishii
IPC分类号： H01L23/495
CPC分类号： H01L23/49568 , H01L21/4803 , H01L21/4807 , H01L21/481 , H01L21/4871 , H01L21/4878 , H01L21/4882 , H01L21/565 , H01L23/3107 , H01L23/36 , H01L23/373 , H01L23/3731 , H01L23/3735 , H01L23/4334 , H01L23/49582 , H01L24/26 , H01L24/27 , H01L24/28 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48245 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： The present invention aims at providing a power module and a lead frame for the power module which can enhance adhesion between a heat sink and an insulating resin sheet while maintaining heat radiation properties. The power module includes: the lead frame including a conductor plate formed from Cu or a Cu alloy, and an Al film formed at least on the other side, opposite to one side on which to mount a semiconductor device, of the conductor plate; the semiconductor device mounted on the one side of the conductor plate; a sealing resin which seals at least the semiconductor device and the conductor plate; and an insulating resin sheet adhered to the conductor plate through the Al film therebetween.
摘要翻译：本发明旨在提供一种功率模块的功率模块和引线框架，其能够在保持散热性能的同时提高散热器和绝缘树脂片材之间的粘附性。功率模块包括：引线框架，包括由Cu或Cu合金形成的导体板，以及至少形成在导体板的至少另一侧的与安装半导体器件的一侧相反的Al膜; 所述半导体器件安装在所述导体板的一侧上; 至少密封半导体器件和导体板的密封树脂; 以及通过它们之间的Al膜粘附到导体板的绝缘树脂片。

20. 发明授权

US06812969B2 Digital camera 失效
标题翻译：数码相机
公开(公告)号：US06812969B2
公开(公告)日：2004-11-02
申请号：US10355255
申请日：2003-01-31
申请人： Eiichi Ide , Mutsuhiro Yamanaka
发明人： Eiichi Ide , Mutsuhiro Yamanaka
IPC分类号： H04N5222
CPC分类号： G02B7/28 , H04N5/23209 , H04N5/23212
摘要： Provided is a digital camera in which the user can easily recognize that an image is out of focus by viewing a display image. At the time of live view display, image capturing is performed every predetermined time in an image capturing unit 3 and images for live view display are successively recorded on an image memory 209. An evaluation value computing unit 230 in an overall control unit 211 obtains an image stored in the image memory 209 and calculates an evaluation value indicative of the focus state of the image. A display image control unit 240 obtains the evaluation value, determines a focus state of the image, and controls a process to be performed by a display image processing unit 250 in accordance with the result of determination. When the image is out of focus, an image quality degrading process is performed in the display image processing unit 250 and an image of low image quality is displayed on a display 10.
摘要翻译：提供了一种数字照相机，其中用户可以通过观看显示图像来容易地识别图像失焦。在实时取景显示时，在图像捕获单元3中每隔预定时间执行图像捕获，并且图像存储器209连续地记录用于实况显示的图像。总体控制单元211中的评估值计算单元230获得存储在图像存储器209中的图像，并计算表示图像的聚焦状态的评价值。显示图像控制单元240获得评估值，确定图像的聚焦状态，并且根据确定结果控制由显示图像处理单元250执行的处理。当图像失焦时，在显示图像处理单元250中执行图像质量降级处理，并且在显示器10上显示低图像质量的图像。

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