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11. 发明授权

US07622725B2 Impurity introducing apparatus and impurity introducing method 失效
公开(公告)号：US07622725B2
公开(公告)日：2009-11-24
申请号：US12122492
申请日：2008-05-16
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： G21K1/093 , H01J37/08
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

12. 发明申请

US20090140174A1 Impurity Introducing Apparatus and Impurity Introducing Method 审中-公开
标题翻译：杂质介绍仪器和杂质介绍方法
公开(公告)号：US20090140174A1
公开(公告)日：2009-06-04
申请号：US11887371
申请日：2006-03-29
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01J37/317 , H01J37/32
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision.In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

13. 发明申请

US20090068769A1 Method and Apparatus for Plasma Processing 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20090068769A1
公开(公告)日：2009-03-12
申请号：US11887821
申请日：2006-04-04
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , G21K5/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32412
摘要： An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample.Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor 14 and an arithmetic device 15.
摘要翻译：本发明的目的是提供一种等离子体处理的方法和装置，其可以精确地监测施加在样品表面上的离子电流。通过涡轮分子泵3通过排气口11排出预定气体，同时从气体供给装置2将真空室1内的气体导入，并通过压力调节将真空室1内的压力保持在规定值用于等离子体源的高频电源5向设置在电介质窗口7附近的线圈8提供高频电力，以在真空室1内产生电感耦合等离子体。一高频电源10用于提供了用于向样品电极6提供高频电力的样品电极。在样品电极高频电源和样品电极6之间设置用于采样电极和高频传感器14的匹配电路13。可以使用高电平来准确地监测施加到样品表面的离子电流频率传感器14和运算装置15。

14. 发明申请

US20080210167A1 IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD 失效
公开(公告)号：US20080210167A1
公开(公告)日：2008-09-04
申请号：US12122492
申请日：2008-05-16
申请人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： C23C16/44
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

15. 发明申请

US20080146009A1 Method for Introducing Impurities 失效
标题翻译：引入杂质的方法
公开(公告)号：US20080146009A1
公开(公告)日：2008-06-19
申请号：US10597716
申请日：2005-02-04
申请人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
发明人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
IPC分类号： H01L21/22
CPC分类号： H01L21/2236
摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
摘要翻译：为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

16. 发明申请

US20070074813A1 Method and apparatus for plasma doping 审中-公开
标题翻译：等离子体掺杂的方法和装置
公开(公告)号：US20070074813A1
公开(公告)日：2007-04-05
申请号：US11603146
申请日：2006-11-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： C23F1/00
CPC分类号： H01J37/32412 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/3299 , H01L21/2236
摘要： A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
摘要翻译：一种用于杂质注入的方法，其中将基板放置在设置在其中将被引入真空的室内的台上，并且还提供注入杂质。将第一高频电力施加到等离子体发生元件，从而产生等离子体，使得腔室中的杂质注入基板。此外，第二高频电力被施加到桌子上。检测到的是室内等离子体的状态，以及表中的电压或电流。控制器根据检测到的等离子体的状态和/或检测到的电压或电流来控制第一和第二高频电源中的至少一个，从而控制待植入的杂质的注入浓度。

17. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

18. 发明授权

US08288259B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08288259B2
公开(公告)日：2012-10-16
申请号：US12950048
申请日：2010-11-19
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
摘要翻译：随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

19. 发明授权

US07858155B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07858155B2
公开(公告)日：2010-12-28
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8，在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体通过改善样品电极6的结构，使硅晶片9的层成为无定形。

20. 发明授权

US07626184B2 Impurity introducing apparatus and impurity introducing method 失效
标题翻译：杂质引入装置和杂质引入方法
公开(公告)号：US07626184B2
公开(公告)日：2009-12-01
申请号：US12057117
申请日：2008-03-27
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01L29/04 , G21K5/10
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

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