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11. 发明授权

US08304344B2 High throughput chemical mechanical polishing composition for metal film planarization 失效
标题翻译：用于金属膜平面化的高通量化学机械抛光组合物
公开(公告)号：US08304344B2
公开(公告)日：2012-11-06
申请号：US12026414
申请日：2008-02-05
申请人： Karl E. Boggs , Michael S. Darsillo , Peter Wrschka , James Welch
发明人： Karl E. Boggs , Michael S. Darsillo , Peter Wrschka , James Welch
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212
摘要： A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.
摘要翻译：化学机械抛光方法，其包括用于平坦化微电子器件结构的单一铜去除CMP浆料制剂，优选在其上沉积铜。该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除，至少一种附加添加剂。本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。

12. 发明申请

US20090253072A1 NANOPARTICLE REVERSIBLE CONTRAST ENHANCEMENT MATERIAL AND METHOD 审中-公开
标题翻译：纳米材料可逆对比增强材料与方法
公开(公告)号：US20090253072A1
公开(公告)日：2009-10-08
申请号：US12416805
申请日：2009-04-01
申请人： Melissa A. Petruska , Guiquan Pan , Thomas H. Baum , Karl E. Boggs
发明人： Melissa A. Petruska , Guiquan Pan , Thomas H. Baum , Karl E. Boggs
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/2022 , G03F7/0042 , G03F7/091
摘要： The invention is to a reversible photobleachable material comprised of nanoparticles of indium gallium oxide or gallium oxide, and a method of exposing a substrate, such as in semiconductor manufacture, using same.
摘要翻译：本发明涉及一种由铟镓氧化物或氧化镓的纳米颗粒构成的可逆光可漂白材料，以及使用其在半导体制造中曝光基板的方法。

13. 发明授权

US07361603B2 Passivative chemical mechanical polishing composition for copper film planarization 有权
标题翻译：钝化化学机械抛光组合物用于铜膜平面化
公开(公告)号：US07361603B2
公开(公告)日：2008-04-22
申请号：US11117274
申请日：2005-04-28
申请人： Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
发明人： Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
摘要翻译：含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂的组合以及使用方法。在CMP抛光期间可以稀释这种CMP组合物，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中以及在CMP期间的铜/ CMP组成界面处存在大量水平的铜离子处理。

14. 发明授权

US6087191A Method for repairing surface defects 失效
标题翻译：修复表面缺陷的方法
公开(公告)号：US6087191A
公开(公告)日：2000-07-11
申请号：US12142
申请日：1998-01-22
申请人： Karl E. Boggs
发明人： Karl E. Boggs
IPC分类号： H01L21/3105 , H01L21/321 , B24B1/00
CPC分类号： H01L21/32115 , H01L21/31051
摘要： A method for repairing defects in a surface layer of a substrate. The method comprises the redeposition, in a solvent environment, of a fill material into the defects of the surface layer. The fill material is provided by the surface layer itself or from a separate source comprising a different material from that of the surface layer.
摘要翻译：一种用于修复衬底的表面层中的缺陷的方法。该方法包括在溶剂环境中将填充材料再沉积到表面层的缺陷中。填充材料由表面层本身提供，或由包括与表面层不同的材料的单独的源提供。

15. 发明授权

US08618036B2 Aqueous cerium-containing solution having an extended bath lifetime for removing mask material 失效
标题翻译：含有水溶液的具有延长浸泡寿命的含铈溶液，用于除去掩模材料
公开(公告)号：US08618036B2
公开(公告)日：2013-12-31
申请号：US13295677
申请日：2011-11-14
申请人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C. M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
发明人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C. M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
IPC分类号： H01L21/302 , H01L21/311
CPC分类号： H01L21/31133 , C09K13/04 , G03F7/423 , G03F7/425 , G03F7/426
摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.
摘要翻译：提供具有延长寿命的铈（IV）络合物或盐的水溶液。在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。

16. 发明申请

US20130123159A1 AQUEOUS CERIUM-CONTAINING SOLUTION HAVING AN EXTENDED BATH LIFETIME FOR REMOVING MASK MATERIAL 失效
标题翻译：含有延长护罩寿命的含有水溶液的解决方案可用于去除面膜材料
公开(公告)号：US20130123159A1
公开(公告)日：2013-05-16
申请号：US13295677
申请日：2011-11-14
申请人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C.M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
发明人： Ali Afzali-Ardakani , John A. Fitzsimmons , Nicholas C.M. Fuller , Mahmoud Khojasteh , Jennifer V. Muncy , George G. Totir , Karl E. Boggs , Emanuel I. Cooper , Michael W. Owens , James L. Simpson
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , C09K13/04 , G03F7/423 , G03F7/425 , G03F7/426
摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.
摘要翻译：提供具有延长寿命的铈（IV）络合物或盐的水溶液。在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。

17. 发明申请

US20120283163A1 COPPER CLEANING AND PROTECTION FORMULATIONS 有权
标题翻译：铜清洁和保护制剂
公开(公告)号：US20120283163A1
公开(公告)日：2012-11-08
申请号：US13124942
申请日：2009-10-20
申请人： Jeffrey A. Barnes , Brian Benac , Karl E. Boggs , Lin Feng , Jun Liu , Melissa A. Petruska , Xiaodong Yan , Peng Zhang
发明人： Jeffrey A. Barnes , Brian Benac , Karl E. Boggs , Lin Feng , Jun Liu , Melissa A. Petruska , Xiaodong Yan , Peng Zhang
IPC分类号： C11D7/60
CPC分类号： C11D3/0073 , B08B3/08 , C11D1/72 , C11D3/042 , C11D3/2096 , C11D3/245 , C11D3/28 , C11D3/30 , C11D3/33 , C11D7/3209 , C11D7/3218 , C11D7/329 , C11D11/0047 , C23G1/20 , H01L21/02074
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
摘要翻译：一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。清洁组合物包括新的腐蚀抑制剂。该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

18. 发明申请

US20090137122A1 METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES 有权
标题翻译：铜膜平面化方法的化学机械抛光组合物的处理方法
公开(公告)号：US20090137122A1
公开(公告)日：2009-05-28
申请号：US12234199
申请日：2008-09-19
申请人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
发明人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
IPC分类号： H01L21/306
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
摘要翻译：通过稀释钝化CMP组合物并确定稀释程度与铜的静态蚀刻速率之间的关系的方法。这种关系可以用于在CMP抛光期间控制CMP组成，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中和在铜/ CMP处存在大量的铜离子组合界面。

19. 发明申请

US20150114429A1 AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT 审中-公开
标题翻译：具有低铜蚀刻率的有机清洁解决方案有机残留物去除改进
公开(公告)号：US20150114429A1
公开(公告)日：2015-04-30
申请号：US14401739
申请日：2013-05-17
申请人： Shrane Ning Jenq , Karl E. Boggs , Jun Liu , Nicole Thomas
发明人： Shrane Ning Jenq , Karl E. Boggs , Jun Liu , Nicole Thomas
IPC分类号： C11D11/00 , C11D7/32 , C25D5/48
CPC分类号： C11D11/0047 , C11D3/0073 , C11D7/08 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C25D5/48 , H01L21/02074
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.
摘要翻译：一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。清洁组合物包括至少一种季碱，至少一种胺，至少一种腐蚀抑制剂和至少一种溶剂。该组合物可与微电子器件的表面高效地清洗后CMP残留物和污染物质，同时与阻挡层相容。

20. 发明授权

US08236695B2 Method of passivating chemical mechanical polishing compositions for copper film planarization processes 有权
标题翻译：钝化铜膜平面化工艺的化学机械抛光组合物的方法
公开(公告)号：US08236695B2
公开(公告)日：2012-08-07
申请号：US12234199
申请日：2008-09-19
申请人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
发明人： Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
摘要翻译：通过稀释钝化CMP组合物并确定稀释程度与铜的静态蚀刻速率之间的关系的方法。这种关系可以用于在CMP抛光期间控制CMP组成，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中和在铜/ CMP处存在大量的铜离子组合界面。

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