专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5539567A Photolithographic technique and illuminator using real-time addressable phase shift light shift 失效
标题翻译：光刻技术和照明器采用实时寻址相移光移位
公开(公告)号：US5539567A
公开(公告)日：1996-07-23
申请号：US260389
申请日：1994-06-16
申请人： Tsen-Hwang Lin , Shane R. Palmer , Steven C. Gustafson , Jay M. Brown
发明人： Tsen-Hwang Lin , Shane R. Palmer , Steven C. Gustafson , Jay M. Brown
IPC分类号： G02B26/06 , G03F1/26 , G03F7/20 , G02F1/09
CPC分类号： G03F7/70291 , G02B26/06 , G03F7/2002 , G03F7/70191 , G03F7/70283 , G03F7/70566 , G03F1/26
摘要： A phase shift illuminator (700) is comprised of a light source (704) and a phase modulator (716), typically a flexure beam micromirror array, which transversely modulates the incident light beam. When a flexure beam micromirror array is used as the phase modulator (716) a polarizing beam splitter (712) and a quarter-wave plate (714) are used to separate the incident and reflected light beams. The phase modulated light beam (720) from the optical illuminator may be used in optical lithography by passing the light beam through a lithography mask (724), typically after the light beam is phase modulated, and focusing the light beam onto a target wafer (726).
摘要翻译：相移照明器（700）包括光源（704）和相位调制器（716），通常是弯曲光束微镜阵列，其横向地调制入射光束。当使用挠曲束微镜阵列作为相位调制器（716）时，偏振分束器（712）和四分之一波片（714）被用于分离入射光和反射光束。来自光学照明器的相位调制光束（720）可以通过使光束通过光刻掩模（724），通常在光束被相位调制之后将光束聚焦到目标晶片（724）上而用于光学光刻 726）。

12. 发明授权

US06342420B1 Hexagonally symmetric integrated circuit cell 有权
标题翻译：六边形对称集成电路单元
公开(公告)号：US06342420B1
公开(公告)日：2002-01-29
申请号：US09542002
申请日：2000-04-03
申请人： Akitoshi Nishimura , Yasutoshi Okuno , Rajesh Khamankar , Shane R. Palmer
发明人： Akitoshi Nishimura , Yasutoshi Okuno , Rajesh Khamankar , Shane R. Palmer
IPC分类号： H01L218242
CPC分类号： H01L27/10888 , H01L27/10805 , Y10S257/905
摘要： An apparatus and method for fabrication a hexagonally symmetric cell, (e.g., a dynamic random access memory cell (100)). The cell can comprise a bitline contact (38), storage node contacts (32) hexagonally surrounding the bitline contact (38), storage nodes (36) also surrounding the bitline contact (38), a wordline (30) portions of which form field effect transistor gates. Large distances between bitline contacts (38) and storage node contact (32) cause large problems during photolithography because dark areas are difficult to achieve when using Levenson Phaseshift. Because Levenson Phaseshift depends on wave cancellations between nearby features, commonly known as destructive interferences, the resultant printability of the pattern is largely a function of the symmetry and separation distances. When non-symmetries in the pattern occur, the result is weaker cancellations of fields (i.e. between features) and a large loss of image contrast and depth of focus during the printing step. The net result are defects, which increase device failure, can be significantly reduced by the geometry modifications disclosed herein.
摘要翻译：用于制造六边形对称单元（例如，动态随机存取存储单元（100））的装置和方法。电池可以包括位线触点（38），六边形围绕位线触点（38）的存储节点触点（32），也围绕位线触点（38）的存储节点（36），其中一部分形成字段效应晶体管栅极。位线触点（38）和存储节点触点（32）之间的大距离在光刻期间引起很大的问题，因为使用Levenson Phaseshift时很难实现暗区。因为Levenson Phaseshift取决于附近特征之间的波浪消除，通常被称为破坏性干扰，所以模式的最终可印刷性主要是对称性和分离距离的函数。当图案中的非对称性发生时，结果是在打印步骤期间，场的更弱的取消（即，特征之间）和图像对比度的大的损失和焦点的深度。最终结果是通过本文公开的几何修改可以显着地减少增加设备故障的缺陷。

13. 发明授权

US6166408A Hexagonally symmetric integrated circuit cell 有权
标题翻译：六边形对称集成电路单元
公开(公告)号：US6166408A
公开(公告)日：2000-12-26
申请号：US216251
申请日：1998-12-18
申请人： Akitoshi Nishimura , Yasutoshi Okuno , Rajesh Khamankar , Shane R. Palmer
发明人： Akitoshi Nishimura , Yasutoshi Okuno , Rajesh Khamankar , Shane R. Palmer
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10888 , H01L27/10805 , Y10S257/905
摘要： An apparatus and method for fabrication a hexagonally symmetric cell, (e.g., a dynamic random access memory cell (100)). The cell can comprise a bitline contact (38), storage node contacts (32) hexagonally surrounding the bitline contact (38), storage nodes (36) also surrounding the bitline contact (38), a wordline (30) portions of which form field effect transistor gates. Large distances between bitline contacts (38) and storage node contacts (32) cause large problems during photolithography because dark areas are difficult to achieve when using Levenson Phaseshift. Because Levenson Phaseshift depends on wave cancellations between nearby features, commonly known as destructive interferences, the resultant printability of the pattern is largely a function of the symmetry and separation distances. When non-symmetries in the pattern occur, the result is weaker cancellations of fields (i.e. between features) and a large loss of image contrast and depth of focus during the printing step. The net result are defects, which increase device failure, can be significantly reduced by the geometry modifications disclosed herein.
摘要翻译：用于制造六边形对称单元（例如，动态随机存取存储单元（100））的装置和方法。电池可以包括位线触点（38），六边形围绕位线触点（38）的存储节点触点（32），也围绕位线触点（38）的存储节点（36），其中一部分形成字段效应晶体管栅极。位线触点（38）和存储节点触点（32）之间的大距离在光刻期间引起很大的问题，因为当使用Levenson Phaseshift时，很难实现暗区。因为Levenson Phaseshift取决于附近特征之间的波浪消除，通常被称为破坏性干扰，所以模式的最终可印刷性主要是对称性和分离距离的函数。当图案中的非对称性发生时，结果是在打印步骤期间，场的更弱的取消（即，特征之间）和图像对比度的大的损失和焦点的深度。最终结果是通过本文公开的几何修改可以显着地减少增加设备故障的缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式