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11. 发明授权

US08304467B2 Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：US08304467B2
公开(公告)日：2012-11-06
申请号：US11914547
申请日：2006-05-10
申请人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
发明人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
IPC分类号： C08G18/28
CPC分类号： B24B37/24 , B24D3/28 , B24D3/32 , C08G18/12 , C08G18/4238 , C08G18/4854 , C08G18/724 , C08G18/758 , C08G18/7621 , C08G2101/0025 , C08G2101/0066 , C08J9/30 , C08J2375/08 , C08G18/3814 , C08G18/48 , C08G18/3865
摘要： A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.
摘要翻译：抛光垫在抛光对象的表面上产生很少的划痕，并且平坦化性能优异。抛光垫具有高的抛光速率，并且平坦化性能优异。抛光垫槽在抛光过程中变得很少被磨粒或抛光屑堵塞，并且即使长时间连续使用，抛光速率几乎不降低。

12. 发明授权

US07871309B2 Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：US07871309B2
公开(公告)日：2011-01-18
申请号：US11720964
申请日：2005-12-08
申请人： Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
发明人： Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
IPC分类号： B24B1/00 , B24D11/00
CPC分类号： B24B37/205 , Y10T428/24339 , Y10T428/24992
摘要： It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).
摘要翻译：本发明的目的是提供一种抛光垫，其能够在抛光过程中对端点进行高精度光学检测，并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏已被使用了很长时间。本发明的第二个目的是提供一种能够抑制抛光特性（例如面内均匀性）劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕抛光。本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值（阈值）的透光区域的抛光垫。

13. 发明授权

US08845852B2 Polishing pad and method of producing semiconductor device 有权
标题翻译：抛光垫及半导体装置的制造方法
公开(公告)号：US08845852B2
公开(公告)日：2014-09-30
申请号：US10536621
申请日：2003-11-27
申请人： Masahiko Nakamori , Tetsuo Shimomura , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
发明人： Masahiko Nakamori , Tetsuo Shimomura , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
IPC分类号： C23F1/00 , B24B37/20 , B24B37/013
CPC分类号： B24B37/205 , B24B37/013
摘要： A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
摘要翻译：公开了一种抛光垫，其能够在抛光过程中进行高精度的光学终点感测，因此具有优异的抛光特性（例如表面均匀性和面内均匀性）。还公开了能够获得大面积晶片的抛光轮廓的抛光垫。第一发明的抛光垫包括在400〜700nm的波长范围内具有不小于50％透射率的透光区域。第二发明的抛光垫包括在600至700nm的波长范围内具有0.5至4mm厚度的透光区域和不小于80％的透光率。第三发明的抛光垫包括布置在抛光垫的中心部分和周边部分之间的透光区域，其沿直径方向的长度（D）比长度（L）长三倍或更长，在圆周方向。

14. 发明申请

US20130005228A1 POLISHING PAD 有权
标题翻译：抛光垫
公开(公告)号：US20130005228A1
公开(公告)日：2013-01-03
申请号：US13607125
申请日：2012-09-07
申请人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
发明人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
IPC分类号： B24D3/00 , B24D11/00
CPC分类号： B24B37/24 , B24D3/28 , B24D3/32 , C08G18/12 , C08G18/4238 , C08G18/4854 , C08G18/724 , C08G18/758 , C08G18/7621 , C08G2101/0025 , C08G2101/0066 , C08J9/30 , C08J2375/08 , C08G18/3814 , C08G18/48 , C08G18/3865
摘要： A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.
摘要翻译：抛光垫在抛光对象的表面上产生很少的划痕，并且平坦化性能优异。抛光垫具有高的抛光速率，并且平坦化性能优异。抛光垫槽在抛光过程中变得很少被磨粒或抛光屑堵塞，并且即使长时间连续使用，抛光速率几乎不降低。

15. 发明申请

US20070190905A1 Polishing pad and semiconductor device manufacturing method 有权
标题翻译：抛光垫和半导体器件的制造方法
公开(公告)号：US20070190905A1
公开(公告)日：2007-08-16
申请号：US10598717
申请日：2004-10-20
申请人： Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
发明人： Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
IPC分类号： B24B1/00 , H01L21/461 , H01L21/302
CPC分类号： B24B37/205 , H01L21/30625
摘要： The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.
摘要翻译：本发明的目的是提供一种抛光垫，即使在用碱性或酸性浆料进行研磨的同时，也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测作为使用该研磨垫的半导体装置的制造方法。本发明的抛光垫用于化学机械抛光，并具有抛光区域和透光区域，其中透光区域满足差值DeltaT（ΔT= T 0 -T < 在0至100nm的测量波长的整个范围内，T 0和T 1之间的平均值（％）在10（％）以内其中T 1是在pH 11或KOH 2的KOH水溶液中浸渍24小时后在测量波长λ下测量的透光区的透光率（％）在pH 4和T 0 <0> 2水溶液中的透光率（％）是在浸渍之前在测量波长λ下测量的。

16. 发明授权

US08530535B2 Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：US08530535B2
公开(公告)日：2013-09-10
申请号：US13107347
申请日：2011-05-13
申请人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
发明人： Atsushi Kazuno , Kazuyuki Ogawa , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
IPC分类号： C08G18/28
CPC分类号： B24B37/24 , B24D3/28 , B24D3/32 , C08G18/12 , C08G18/4238 , C08G18/4854 , C08G18/724 , C08G18/758 , C08G18/7621 , C08G2101/0025 , C08G2101/0066 , C08J9/30 , C08J2375/08 , C08G18/3814 , C08G18/48 , C08G18/3865
摘要： A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.
摘要翻译：抛光垫在抛光对象的表面上产生很少的划痕，并且平坦化性能优异。抛光垫具有高的抛光速率，并且平坦化性能优异。抛光垫槽在抛光过程中变得很少被磨粒或抛光屑堵塞，并且即使长时间连续使用，抛光速率几乎不降低。

17. 发明授权

US07470170B2 Polishing pad and method for manufacture of semiconductor device using the same 有权
标题翻译：抛光垫及其制造方法
公开(公告)号：US07470170B2
公开(公告)日：2008-12-30
申请号：US10590067
申请日：2005-02-22
申请人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
发明人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
IPC分类号： B24B1/00
CPC分类号： B24D3/24 , B24B37/22
摘要： The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).
摘要翻译：本发明提供了一种抛光垫，其对诸如半导体晶片的待抛光材料赋予优异的平面度和均匀性，而不会形成划痕。本发明涉及一种包括抛光层和缓冲层的半导体晶片抛光垫，其中抛光层由发泡聚氨酯形成，其弯曲模量为250至350MPa，缓冲层由闭孔泡沫形成，厚度为0.5〜1.0mm，应变常数为0.01〜0.08μm/（gf / cm 2）。

18. 发明申请

US20080085943A1 Polishing Pad and Manufacturing Method Thereof 有权
标题翻译：抛光垫及其制造方法
公开(公告)号：US20080085943A1
公开(公告)日：2008-04-10
申请号：US11794284
申请日：2006-02-27
申请人： Masato Doura , Takeshi Fukuda , Kazuyuki Ogawa , Atsushi Kazuno , Hiroshi Seyanagi , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
发明人： Masato Doura , Takeshi Fukuda , Kazuyuki Ogawa , Atsushi Kazuno , Hiroshi Seyanagi , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
IPC分类号： C08G18/10
CPC分类号： B24B37/24 , B24D3/28 , C08G18/10 , C08G2101/00 , C08G18/3237 , C08G18/3215
摘要： A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70° C. or lower, for example.
摘要翻译：制造由其中具有非常均匀的细小单元的聚氨酯树脂泡沫制成的抛光垫的方法和通过该方法获得的抛光垫提供了一种抛光垫具有更好的抛光特性（特别是平面化）的同时提供改善的可修整性，同时保持平面化特性和抛光速度。聚氨酯树脂发泡体是通过将异氰酸酯封端的预聚物与熔点为70℃以下的芳香族多胺扩链剂反应得到的固化物。

19. 发明申请

US20070178812A1 Polishing pad and method for manufacture of semiconductor device using the same 有权
标题翻译：抛光垫及其制造方法
公开(公告)号：US20070178812A1
公开(公告)日：2007-08-02
申请号：US10590067
申请日：2005-02-22
申请人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyukii Nakai , Masahiko Nakamori , Takatoshi Yamada
发明人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyukii Nakai , Masahiko Nakamori , Takatoshi Yamada
IPC分类号： B24B7/30
CPC分类号： B24D3/24 , B24B37/22
摘要： The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).
摘要翻译：本发明提供了一种抛光垫，其对诸如半导体晶片的待抛光材料赋予优异的平面度和均匀性，而不会形成划痕。本发明涉及一种包括抛光层和缓冲层的半导体晶片抛光垫，其中抛光层由发泡聚氨酯形成，其弯曲模量为250至350MPa，缓冲层由闭孔泡沫形成，厚度为0.5〜1.0mm，应变常数为0.01〜0.08μm/（gf / cm 2）以下。

20. 发明申请

US20060037699A1 Polishing pad and method for manufacturing semiconductor device 有权
标题翻译：抛光垫及半导体器件制造方法
公开(公告)号：US20060037699A1
公开(公告)日：2006-02-23
申请号：US10536621
申请日：2003-11-27
申请人： Masahiko Nakamori , Tetsuo Shimomura , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Kimihiro Watanabe
发明人： Masahiko Nakamori , Tetsuo Shimomura , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Kimihiro Watanabe
IPC分类号： C23F1/00
CPC分类号： B24B37/205 , B24B37/013
摘要： A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
摘要翻译：公开了一种抛光垫，其能够在抛光过程中进行高精度的光学终点感测，因此具有优异的抛光特性（例如表面均匀性和面内均匀性）。还公开了能够获得大面积晶片的抛光轮廓的抛光垫。第一发明的抛光垫包括在400〜700nm的波长范围内具有不小于50％透射率的透光区域。第二发明的抛光垫包括在600至700nm的波长范围内具有0.5至4mm厚度的透光区域和不小于80％的透光率。第三发明的抛光垫包括布置在抛光垫的中心部分和周边部分之间的透光区域，其沿直径方向的长度（D）比长度（L）长三倍或更长，在圆周方向。

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