专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08303722B2 Water and method for storing silicon wafer 有权
标题翻译：用于储存硅晶片的水和方法
公开(公告)号：US08303722B2
公开(公告)日：2012-11-06
申请号：US10276483
申请日：2002-03-11
申请人： Tatsuo Abe , Kenichi Kanazawa , Akira Miyashita , Norio Kashimura
发明人： Tatsuo Abe , Kenichi Kanazawa , Akira Miyashita , Norio Kashimura
IPC分类号： B08B7/00 , B08B3/00 , B08B7/04
CPC分类号： H01L21/02052
摘要： There is provided a storage water of a silicon wafer wherein a liquid temperature of the storage water is 0 to 18° C. And there is provided a shower water of a silicon wafer wherein a liquid temperature of the shower water is 0 to 18° C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer wherein the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18° C., and is then stored in liquid using a storage water of which liquid temperature is 0 to 18° C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it wherein degradation of the wafer quality can be prevented.
摘要翻译：提供储存水的液体温度为0〜18℃的硅晶片的储存水。另外，提供了一种硅晶片的淋浴水，其中淋浴水的液温为0〜18℃ 将晶片储存在储存水中，并使用淋浴水淋浴。本发明还涉及一种用于储存硅晶片的方法，其中使用液体温度为0至18℃的淋浴水将硅晶片淋浴，然后使用液体温度为0的储水将其储存在液体中从而可以提供一种用于储存硅晶片的水，一种储存硅晶片的方法，一种用于淋浴的水以及一种用于淋浴的方法，其中可以防止晶片质量的降低。

12. 发明申请

US20080030297A1 Semiconductor resistor, method of manufacturing the same, and current generating device using the same 有权
标题翻译：半导体电阻，其制造方法以及使用该半导体电阻的电流产生装置
公开(公告)号：US20080030297A1
公开(公告)日：2008-02-07
申请号：US11811860
申请日：2007-06-11
申请人： Masaya Ohtsuka , Hiroaki Abe , Tatsuo Abe
发明人： Masaya Ohtsuka , Hiroaki Abe , Tatsuo Abe
IPC分类号： H01C7/13 , H01L21/02
CPC分类号： H01L27/0802 , H01L28/20 , H01L29/66166 , H01L29/8605
摘要： A method for manufacturing a semiconductor resistor includes forming a well region in a semiconductor substrate, with the well region serving as a resistive region, forming a pair of contact regions spaced apart from each other in the well region, and forming a diffusion region in an intermediate portion between the pair of contact regions on a surface of the well region. The diffusion region is configured to adjust resistance and temperature dependence of the semiconductor resistor.
摘要翻译：一种制造半导体电阻器的方法包括在半导体衬底中形成阱区，阱区用作电阻区，在阱区中形成彼此间隔的一对接触区，并形成扩散区在该区域的表面上的一对接触区域之间的中间部分。扩散区域被配置为调节半导体电阻器的电阻和温度依赖性。

13. 发明申请

US20140048100A1 METHOD FOR CLEANING SEMICONDUCTOR WAFER 有权
标题翻译：清洗半导体波形的方法
公开(公告)号：US20140048100A1
公开(公告)日：2014-02-20
申请号：US14113329
申请日：2012-05-11
申请人： Tatsuo Abe , Hitoshi Kabasawa
发明人： Tatsuo Abe , Hitoshi Kabasawa
IPC分类号： H01L21/02
CPC分类号： H01L21/02052
摘要： The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided.
摘要翻译：本发明提供了一种清洗半导体晶片的方法，其中该方法包括以下顺序的HF清洗，臭氧水清洗和HF清洗的清洗步骤至少一次，其中在清洗方法中最后进行的HF清洗半导体晶片进行清洁，使得通过臭氧水形成在半导体晶片的表面上的氧化膜未被完全去除并且在半导体晶片的表面上保持其厚度的一部分。结果，提供了一种用于清洁半导体晶片的方法，其中可以在半导体晶片的清洁中同时减少金属杂质水平和颗粒水平。

14. 发明授权

US08083856B2 Ultrasonic cleaning apparatus and ultrasonic cleaning method 有权
标题翻译：超声波清洗设备和超声波清洗方法
公开(公告)号：US08083856B2
公开(公告)日：2011-12-27
申请号：US12864255
申请日：2009-01-23
申请人： Tatsuo Abe , Hitoshi Kabasawa , Izumi Arai
发明人： Tatsuo Abe , Hitoshi Kabasawa , Izumi Arai
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , H01L21/67057
摘要： An ultrasonic cleaning apparatus having at least a cleaning tank; an ultrasonic wave transmitting tank; a vibrating plate placed at a bottom portion of the ultrasonic wave transmitting tank, the vibrating plate superposing the ultrasonic waves on the transmitting water with a transducer; and a holding jig for holding the object to be cleaned in the cleaning tank, the apparatus in which the object to be cleaned is ultrasonically cleaned by immersing the object to be cleaned held with the holding jig in the cleaning liquid accommodated in the cleaning tank, putting the cleaning tank into the transmitting water accommodated in the ultrasonic wave transmitting tank, and transmitting the ultrasonic waves superposed with the vibrating plate to the cleaning tank through the transmitting water, the apparatus comprising a transmitting tank oscillating mechanism for oscillating the ultrasonic wave transmitting tank in a horizontal plane.
摘要翻译：一种至少具有清洗槽的超声波清洗装置; 超声波发射罐; 设置在所述超声波发送槽的底部的振动板，所述振动板用传感器将所述超声波叠加在所述透射水上; 以及用于将待清洁物体保持在清洗槽中的保持夹具，其中通过将保持夹具夹持的待清洁物体浸入容纳在清洗槽中的清洗液体中来对被清洁物体进行超声波清洗的装置，将清洗槽放入容纳在超声波传送箱内的传送水中，并通过传送水将与振动板叠加的超声波传送到清洗槽，该设备包括一个用于使超声波传输槽振荡的传送槽振荡机构在水平面。

15. 发明申请

US20100294305A1 ULTRASONIC CLEANING APPARATUS AND ULTRASONIC CLEANING METHOD 有权
标题翻译：超声波清洗装置和超声波清洗方法
公开(公告)号：US20100294305A1
公开(公告)日：2010-11-25
申请号：US12864255
申请日：2009-01-23
申请人： Tatsuo Abe , Hitoshi Kabasawa , Izumi Arai
发明人： Tatsuo Abe , Hitoshi Kabasawa , Izumi Arai
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , H01L21/67057
摘要： An ultrasonic cleaning apparatus having at least a cleaning an ultrasonic wave transmitting tank a vibrating plate placed at a bottom portion of the ultrasonic wave transmitting tank, the vibrating plate superposing the ultrasonic waves on the transmitting water with a transducer; and a holding jig for holding the object to be cleaned in the cleaning tank, the apparatus in which the object to be cleaned is ultrasonically cleaned by immersing the object to be cleaned held with the holding jig in the cleaning liquid accommodated in the cleaning tank, putting the cleaning tank into the transmitting water accommodated in the ultrasonic wave transmitting tank, and transmitting the ultrasonic waves superposed with the vibrating plate to the cleaning tank through the transmitting water, the apparatus comprising a transmitting tank oscillating mechanism for oscillating the ultrasonic wave transmitting tank in a horizontal plane.
摘要翻译：一种超声波清洗装置，其特征在于，具有至少清洗超声波透过箱，设置在所述超声波透过箱的底部的振动板，所述振动板用传感器将所述超声波重叠在所述透水上; 以及用于将待清洁物体保持在清洗槽中的保持夹具，其中通过将保持夹具夹持的待清洁物体浸入容纳在清洗槽中的清洗液体中来对被清洁物体进行超声波清洗的装置，将清洗槽放入容纳在超声波传送箱内的传送水中，并通过传送水将与振动板叠加的超声波传送到清洗槽，该设备包括一个用于使超声波传输槽振荡的传送槽振荡机构在水平面。

16. 发明授权

US5914281A Apparatus for etching wafer 失效
标题翻译：蚀刻晶片的设备
公开(公告)号：US5914281A
公开(公告)日：1999-06-22
申请号：US706071
申请日：1996-08-30
申请人： Tatsuo Abe , Makoto Suzuki
发明人： Tatsuo Abe , Makoto Suzuki
IPC分类号： C23F1/08 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/67023
摘要： According to the invention, a plurality of wafers are disposed in a steady-state rotating flow of a mixed acid in a main chemical processing zone in an etching trough, the rotating flow being formed to be substantially concentric circle with the wafers, thus permitting uniform dispersion of air bubbles for bubbling in the mixed acid and stable flow thereof to obtain reliable reproduction of satisfactory flatness and luster. A flow of mixed acid in the etching trough is formed as a superficial horizontal laminar flow in the neighborhood of the liquid level and a rotating flow induced in the neighborhood of the semiconductor wafer. Mixed acid in the etching trough is caused to overflow from the mixed acid supply side to the opposite side and is thus discharged.
摘要翻译：根据本发明，在蚀刻槽的主化学处理区域中，将多个晶片设置在混合酸的稳态旋转流中，旋转流与晶片形成为大致同心圆，从而允许均匀在混合酸中发泡的气泡的分散和稳定的流动，以获得令人满意的平坦度和光泽的可靠再现。蚀刻槽中的混合酸流形成为在液面附近的表面水平层流和在半导体晶片附近引起的旋转流。使蚀刻槽中的混合酸从混合酸供给侧溢出到相反侧，从而排出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式