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    • 12. 发明授权
    • External cavity semiconductor laser
    • 外腔半导体激光器
    • US07936803B2
    • 2011-05-03
    • US11887063
    • 2006-03-24
    • Miki YatsukiTokutaka HaraMasahito Mure
    • Miki YatsukiTokutaka HaraMasahito Mure
    • H01S3/083
    • H01S5/14H01S3/0815H01S3/083H01S5/1064H01S5/1085H01S5/141H01S5/2036
    • An external cavity semiconductor laser including a first and second input-output section disposed on a common end surface via a center axis, and a semiconductor laser device emitting a first and second laser light from the first and second input-output sections in two directions. The laser device includes a first reflecting unit for reflecting the first laser light emitted from the first input-output section and returning the reflected first laser light to the first input-output section, a second reflecting unit for reflecting the second laser light emitted from the second input-output section and returning the reflected second laser light to the second input-output section, a third reflecting unit provided to a second end surface disposed opposite a first end surface having first and second input-output sections for reflecting laser light returned to one of the input-output sections so as to be emitted from the other one of the input-output sections.
    • 一种外腔半导体激光器,包括经由中心轴设置在公共端表面上的第一和第二输入输出部分以及从第一和第二输入输出部分沿两个方向发射第一和第二激光的半导体激光器装置。 激光装置包括:第一反射单元,用于反射从第一输入输出部发射的第一激光并将反射的第一激光返回到第一输入输出部;第二反射单元,用于反射从第一输入输出部发射的第二激光; 第二输入输出部分,并将反射的第二激光返回到第二输入输出部分;第三反射单元,设置在与第一端面相对设置的第二端面上,第二端面具有第一和第二输入输出部分,用于反射回到 其中一个输入 - 输出部分从另一个输入 - 输出部分发射。