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11. 发明授权

US06515640B2 Electron emission device with gap between electron emission electrode and substrate 失效
标题翻译：具有电子发射电极和衬底之间间隙的电子发射器件
公开(公告)号：US06515640B2
公开(公告)日：2003-02-04
申请号：US09060354
申请日：1998-04-15
申请人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： G09G320
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022
摘要： An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.
摘要翻译：电子发射装置包括具有尖端的电子发射电极和与尖端相对定位的对电极，两者都是通过层压在绝缘衬底上的导电层的精细加工形成的。

12. 发明授权

US5786658A Electron emission device with gap between electron emission electrode and substrate 失效
公开(公告)号：US5786658A
公开(公告)日：1998-07-28
申请号：US199967
申请日：1994-02-22
申请人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Mamoru Miyawaki , Tetsuya Kaneko , Akira Suzuki , Isamu Shimoda , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： H01J1/304 , H01J3/02 , H01J1/02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022
摘要： An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

13. 发明授权

US4894611A System for measuring characteristics of electron emitting sources 失效
标题翻译：用于测量电子发射源特性的系统
公开(公告)号：US4894611A
公开(公告)日：1990-01-16
申请号：US186963
申请日：1988-04-27
申请人： Isamu Shimoda , Mamoru Miyawaki , Akira Suzuki , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Masahiko Okunuki
发明人： Isamu Shimoda , Mamoru Miyawaki , Akira Suzuki , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： G01R31/26 , G01R31/24 , H01J9/42 , H01J37/06
CPC分类号： G01R31/24
摘要： A measuring system particularly suitably usable with an apparatus having a plurality of electron emitting sources, for measuring the characteristics of the electron emitting sources is disclosed. In the measuring system, the electron emitting sources are driven so that they emit electron flows of predetermined and different frequencies. The emitted electron flows are collected and, thereafter, only those signals having components corresponding to the predetermined frequencies are extracted. Based on the extracted signals, the characteristics of the electron emitting sources are measured at the same time and independently of each other.
摘要翻译：公开了一种特别适用于具有多个电子发射源的装置的测量系统，用于测量电子发射源的特性。在测量系统中，电子发射源被驱动，使得它们发射预定和不同频率的电子流。收集发射的电子流，然后仅提取具有与预定频率对应的分量的那些信号。基于所提取的信号，电子发射源的特性同时并且彼此独立地被测量。

14. 发明授权

US5107311A Semiconductor light-emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5107311A
公开(公告)日：1992-04-21
申请号：US560769
申请日：1990-07-31
申请人： Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
发明人： Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
IPC分类号： H01L33/00 , H01L33/24 , H01L33/30
CPC分类号： H01L33/24 , H01L33/0008 , H01L33/0033 , H01L33/0054 , H01L33/305
摘要： A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasing voltage to the PN junction to cause an avalanche breakdown and an area formed in a portion of the PN junction. The p-type semiconductor layers forms a planar type PN junction with the n-type semiconductor layer. The area formed in a portion of the PN junction has a lower break down voltage than that of other area.

15. 发明授权

US5285079A Electron emitting device, electron emitting apparatus and electron beam drawing apparatus 失效
标题翻译：电子发射装置，电子发射装置和电子束描绘装置
公开(公告)号：US5285079A
公开(公告)日：1994-02-08
申请号：US48946
申请日：1993-04-20
申请人： Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
发明人： Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
IPC分类号： H01J1/308 , H01L29/161 , H01J1/14 , H01L29/205 , H01L29/225
CPC分类号： H01J1/308
摘要： An electron emitting device is provided for use in a flat display, an electron beam drawing apparatus, a CRT display and so on. The electron emitting device comprises a first layer having a first bandgap, a second layer formed on the first layer and having the first bandgap, a third layer formed on the second layer and having a second bandgap, which is narrower than the first bandgap, and a fourth layer formed on the third layer and having an electron emitting surface. According to this structure, a high electron emission efficiency can be obtained.
摘要翻译：电子发射装置用于平板显示器，电子束描绘装置，CRT显示器等。电子发射器件包括具有第一带隙的第一层，形成在第一层上并具有第一带隙的第二层，形成在第二层上并具有比第一带隙窄的第二带隙的第三层，以及形成在第三层上并具有电子发射表面的第四层。根据该结构，可以获得高电子发射效率。

16. 发明授权

US5391956A Electron emitting device, method for producing the same and display apparatus and electron beam drawing apparatus utilizing the same 失效
标题翻译：电子发射器件，其制造方法和显示装置以及利用该发光器件的电子束描绘装置
公开(公告)号：US5391956A
公开(公告)日：1995-02-21
申请号：US994459
申请日：1992-12-21
申请人： Nobuo Watanabe , Takeo Tsukamoto , Masahiko Okunuki
发明人： Nobuo Watanabe , Takeo Tsukamoto , Masahiko Okunuki
IPC分类号： H01J1/304 , H01J9/02 , H01J1/30
CPC分类号： H01J9/025 , H01J1/3042
摘要： An electron emitting device with an insulating layer on a substrate. The insulating layer has a hollow part in which a conical electrode is formed. A conductive layer on the insulating layer has an aperture on the hollow part of the insulating layer. The hollow part is formed by etching utilizing an ion beam.
摘要翻译：一种在衬底上具有绝缘层的电子发射器件。绝缘层具有形成有圆锥形电极的中空部分。绝缘层上的导电层在绝缘层的中空部分上具有孔。中空部分通过使用离子束的蚀刻形成。

17. 发明授权

US5202571A Electron emitting device with diamond 失效
标题翻译：带金刚石的电子发射器件
公开(公告)号：US5202571A
公开(公告)日：1993-04-13
申请号：US725476
申请日：1991-07-03
申请人： Keiji Hirabayashi , Noriko Kurihara , Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
发明人： Keiji Hirabayashi , Noriko Kurihara , Takeo Tsukamoto , Nobuo Watanabe , Masahiko Okunuki
IPC分类号： H01J1/308
CPC分类号： H01J1/308
摘要： An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.
摘要翻译：电子发射器件设置有形成在半导体衬底上的p半导体层。 p半导体层由金刚石层构成。

18. 发明授权

US5760417A Semiconductor electron emission device 失效
标题翻译：半导体电子发射装置
公开(公告)号：US5760417A
公开(公告)日：1998-06-02
申请号：US410396
申请日：1995-03-27
申请人： Nobuo Watanabe , Norio Kaneko , Masahiko Okunuki , Takeo Tsukamoto
发明人： Nobuo Watanabe , Norio Kaneko , Masahiko Okunuki , Takeo Tsukamoto
IPC分类号： H01J1/308 , H01J9/02 , H01L29/47 , H01L29/812 , H01L31/108 , H01L33/00
CPC分类号： H01J9/022 , H01J1/308
摘要： In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.
摘要翻译：在通过向金属材料或金属化合物材料和p型半导体之间的肖特基势垒结施加反向偏置电压并从外部从固态表面发射电子来引起雪崩击穿的半导体电子发射器件中，p 用于引起雪崩击穿的p型半导体区域（第一区域）接触用于向第一区域提供载流子的p型半导体区域（第二区域），并且在第一区域周围形成半绝缘区域。

19. 发明授权

US5414272A Semiconductor electron emission element 失效
标题翻译：半导体电子发射元件
公开(公告)号：US5414272A
公开(公告)日：1995-05-09
申请号：US224192
申请日：1994-04-07
申请人： Nobuo Watanabe , Masahiko Okunuki , Takeo Tsukamoto
发明人： Nobuo Watanabe , Masahiko Okunuki , Takeo Tsukamoto
IPC分类号： H01L29/872 , H01J1/308 , H01J9/02 , H01L29/47 , H01L29/48 , H01L29/56 , H01L29/64
CPC分类号： H01J1/308 , H01J9/022
摘要： A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.
摘要翻译：在半导体的表面区域中具有肖特基结的半导体元件发光元件包括具有第一载流子浓度的第一区域，具有第二载流子浓度的第二区域和具有第三载流子浓度的第三区域。所有区域都位于形成肖特基结的电极之下。第一，第二和第三载流子浓度满足第一区域的第一载流子浓度高于第二区域的第二载流子浓度，并且第二区域的第二载流子浓度高于第二区域的第三载流子浓度的条件第三个地区。第一，第二和第三区域具有以下结构：具有第二载流子浓度的至少一个第二区域位于第三载流子浓度的第三区域内，并且至少具有第一载流子浓度的第一区域位于所述第二区域具有第二载流子浓度。

20. 发明授权

US08139716B2 Multi X-ray generator and multi X-ray imaging apparatus 有权
标题翻译：多X射线发生器和多X射线成像装置
公开(公告)号：US08139716B2
公开(公告)日：2012-03-20
申请号：US12971849
申请日：2010-12-17
申请人： Masahiko Okunuki , Osamu Tsujii , Takeo Tsukamoto
发明人： Masahiko Okunuki , Osamu Tsujii , Takeo Tsukamoto
IPC分类号： H01J35/06
CPC分类号： H01J35/065 , H01J35/08 , H01J35/16 , H01J35/18 , H01J2235/062 , H01J2235/068 , H01J2235/087 , H01J2235/166 , H01J2235/168
摘要： A compact apparatus can form multi-X-ray beams with good controllability. Electron beams (e) emitted from electron emission elements (15) of a multi-electron beam generating unit (12) receive the lens effect of a lens electrode (19). The resultant electron beams are accelerated to the final potential level by portions of a transmission-type target portion (13) of an anode electrode (20). The multi-X-ray beams (x) generated by the transmission-type target portion (13) pass through an X-ray shielding plate (23) and X-ray extraction portions (24) in a vacuum chamber and are extracted from the X-ray extraction windows (27) of a wall portion (25) into the atmosphere.
摘要翻译：紧凑的装置可以形成具有良好可控性的多X射线束。从多电子束产生单元（12）的电子发射元件（15）发射的电子束（e）接收透镜电极（19）的透镜效应。通过阳极电极（20）的透射型目标部分（13）的部分将所得的电子束加速到最终的电位。由透射型目标部分（13）产生的多个X射线束（x）通过真空室中的X射线屏蔽板（23）和X射线提取部分（24），并从壁部分（25）的X射线提取窗口（27）进入大气。

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