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    • 11. 发明授权
    • Synthetic insecticidal proteins active against corn rootworm
    • 对玉米根虫有活性的合成杀虫蛋白
    • US09109231B2
    • 2015-08-18
    • US13370408
    • 2012-02-10
    • Ericka BermudezRuth CongJingtong HouTakashi Yamamoto
    • Ericka BermudezRuth CongJingtong HouTakashi Yamamoto
    • C12N15/82C07K14/325A01N37/46A01N63/02
    • C12N15/8286A01N37/46A01N63/02C07K14/325Y02A40/162
    • Traditionally, the primary method for impacting insect pest populations is the application of broad-spectrum chemical insecticides. However, there is increasing concern about the environmental hazards associated with the production and use of synthetic chemical pesticides. Thus, there is substantial interest in developing alternative pesticides, including biological control of insect pests of agricultural significance using a microbial agent or another species of insect. The present invention provides compositions and methods for such biological control. Modified Cry3 pesticidal polypeptides, polynucleotides encoding such polypeptides, and methods of use are disclosed. The modified polynucleotides provided herein can be used to transform organisms and cells of hosts comprising plant, insects, and microorganisms. The expression of modified polypeptides can provide the host with improved insecticidal activity against one or more insect pathogens.
    • 传统上,影响昆虫害虫种群的主要方法是应用广谱化学杀虫剂。 然而,对生产和使用合成化学农药的环境危害越来越受到关注。 因此,使用微生物剂或其他昆虫种类开发替代农药,包括对具有农业意义的害虫的生物防治具有重大意义。 本发明提供了用于这种生物学控制的组合物和方法。 公开了修饰的Cry3杀虫多肽,编码这些多肽的多核苷酸和使用方法。 本文提供的修饰的多核苷酸可用于转化包含植物,昆虫和微生物的宿主的生物体和细胞。 修饰的多肽的表达可以为宿主提供对一种或多种昆虫病原体的改善的杀虫活性。
    • 18. 发明授权
    • Plasma etching method
    • 等离子蚀刻法
    • US08628676B2
    • 2014-01-14
    • US13638144
    • 2011-05-25
    • Naoya IkemotoTakashi YamamotoYoshiyuki Nozawa
    • Naoya IkemotoTakashi YamamotoYoshiyuki Nozawa
    • H01L21/3065
    • H01L21/3065H01L21/32137
    • A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
    • 提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。 使用含氟气体和氮气,同时从这些气体产生等离子体,并且通过等离子体蚀刻硅衬底K,同时通过等离子体在硅衬底K上形成耐蚀刻层,然后将氟 使用含气体和含氧气体,并且同时从这些气体产生等离子体,并且通过等离子体蚀刻硅衬底K,同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层 从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.