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11. 发明授权

US4931651A Phosphors and fluorescent compositions for emission of light under low-velocity electron excitation and fluorescent display devices utilizing the same 失效
标题翻译：用于在低速电子激发下发射光的荧光体和荧光组合物及使用其的荧光显示装置
公开(公告)号：US4931651A
公开(公告)日：1990-06-05
申请号：US222620
申请日：1988-07-21
申请人： Akiyasu Kagami , Takashi Hase
发明人： Akiyasu Kagami , Takashi Hase
IPC分类号： C09K11/61 , C09K11/64
CPC分类号： C09K11/613 , C09K11/612 , C09K11/642
摘要： A phosphor for emission of light under low-velocity electron excitation having the formula:(Zn.sub.1-X,Cd.sub.x)S:aLi,bM.sup.I,cX (I)wherein 0.ltoreq.x.ltoreq.1, 0 0, M.sup.I is at least one element selected from the group consisting of Na, K, Ag, Rb, Cs, Au and Cu, and X is at least one element selected from the group consisting of Al, Cl, Br and I.
摘要翻译：用于在低速电子激发下发射光的荧光体具有下式：（Zn1-X，Cdx）S：aLi，bMI，cX（I）其中0 / = 0，c> 0，MI是选自Na，K，Ag，Rb，Cs，Au和Cu中的至少一种元素，X是选自由Al，Cl，Br和I组成的组。

12. 发明授权

US4551397A Zinc silicate phosphor and electron excited fluorescent display device using the phosphor 失效
标题翻译：使用磷光体的硅酸锌荧光粉和电子激发荧光显示装置
公开(公告)号：US4551397A
公开(公告)日：1985-11-05
申请号：US596387
申请日：1984-04-03
申请人： Masachika Yaguchi , Tomoki Mikami , Takashi Hase
发明人： Masachika Yaguchi , Tomoki Mikami , Takashi Hase
IPC分类号： C09K11/61 , C09K11/62 , C09K11/64 , C09K11/70 , C09K11/71 , C09K11/74 , C09K11/75 , H01J29/32 , C09K11/44
CPC分类号： C09K11/642 , C09K11/612 , C09K11/626 , C09K11/644 , C09K11/703 , C09K11/71 , C09K11/7442 , C09K11/7464 , C09K11/7471 , C09K11/757 , H01J29/32
摘要： A zinc silicate phosphor represented by the formula:(Zn.sub.1-x-2y, M.sup.II.sub.x, Na.sub.2y).sub.2 SiO.sub.4 :Mn.sub.a, As.sub.b, M.sub.c (I)where M.sup.II is at least one element selected from the group consisting of barium, calcium and strontium, M is at least one of antimony and bismuth, and x, y, a, b and c satisfy the conditions of O.ltoreq.x.ltoreq.5.times.10.sup.-2, O.ltoreq.2y.ltoreq.5.times.10.sup.-3, 5.times.10.sup.-5 .ltoreq.a.ltoreq.3.times.10.sup.-2, O.ltoreq.b.ltoreq.5.times.10.sup.-3 and O
摘要翻译：由式（Zn1-x-2y，MIIx，Na2y）2SiO4：Mna，Asb，Mc（I）表示的硅酸锌荧光体，其中MII为选自钡，钙和锶中的至少一种元素，M 是锑和铋中的至少一种，并且x，y，a，b和c满足O X = 5×10 -2，O 2 = 5×10 -3，5×10 -5 分别（= x×2×2×2×2×2×3×10 -3×10 -3×10 -3×10 -3×10 -2×××××××10 -3）。

13. 发明授权

US4085351A Gaseous discharge light emitting element 失效
标题翻译：气体放电发光元件
公开(公告)号：US4085351A
公开(公告)日：1978-04-18
申请号：US761988
申请日：1977-01-24
申请人： Koichi Takahashi , Kinichiro Narita , Akiyasu Kagami , Takashi Hase , Yoshiyuki Mimura , Yoshinori Tanigami , Junro Koike , Ryuya Toyonaga , Takehiro Kojima
发明人： Koichi Takahashi , Kinichiro Narita , Akiyasu Kagami , Takashi Hase , Yoshiyuki Mimura , Yoshinori Tanigami , Junro Koike , Ryuya Toyonaga , Takehiro Kojima
IPC分类号： C09K11/08 , H01J17/02 , H01J17/20 , H01J17/49 , H01J61/44 , H01J61/18
CPC分类号： H01J61/44 , H01J17/20 , H01J17/492
摘要： In an air-tight at least partially transparent container, a phosphor, a gas or gas mixture and a pair of discharging electrodes are contained. The discharge gap is in the range of 0.1 to 3.0mm, and the pressure of the gas or gas mixture sealed in the container is such that the product of the pressure and the discharge gap is in the range of 30 to 300 Torr.mm. The gas or gas mixture has discharge radiation spectra within the region of wavelength shorter than 200nm. The phosphor is a manganese activated aluminate phosphor represented by the formula(M.sup.II.sub.1-x, Mn.sub.x ) O.multidot.zAl.sub.2 O.sub.3where M.sup.II is selected from a group consisting of calcium, strontium, barium, magnesium and zinc, and x and z are numbers within the ranges of 10.sup.-3 .ltoreq.x.ltoreq.7.times.10.sup.-1 and 1.ltoreq.z.ltoreq.20, respectively.
摘要翻译：在气密的至少部分透明的容器中，包含磷光体，气体或气体混合物以及一对放电电极。放电间隙在0.1〜3.0mm的范围内，密封在容器内的气体或气体混合物的压力使得压力与放电间隙的乘积在30〜300Torr的范围内。气体或气体混合物在波长短于200nm的区域内具有放电辐射光谱。荧光体是由式（MII1-x，Mnx）OxzAl2O3表示的锰活化铝酸盐荧光体，其中MII选自钙，锶，钡，镁和锌，x和z为10以下的数 -3

14. 发明授权

US4085350A Gaseous discharge light emitting element 失效
标题翻译：气体放电发光元件
公开(公告)号：US4085350A
公开(公告)日：1978-04-18
申请号：US737026
申请日：1976-10-29
申请人： Akiyasu Kagami , Takashi Hase , Minoru Hiraki , Junro Koike , Ryuya Toyonaga , Takehiro Kojima
发明人： Akiyasu Kagami , Takashi Hase , Minoru Hiraki , Junro Koike , Ryuya Toyonaga , Takehiro Kojima
IPC分类号： C09K11/00 , C09K11/08 , C09K11/77 , H01J17/02 , H01J61/44
CPC分类号： C09K11/7797 , H01J61/44
摘要： In an air-tight container made of transparent material, a phosphor, a gas or gas mixture and a pair of discharging electrodes are contained. The discharge gap is in the range of 0.1 to 3.0mm, and the pressure of the gas or gas mixture sealed in the container is such that the product of the pressure and the discharge gap is in the range of 30 to 300 Torr.mm. The gas or gas mixture has discharge radiation spectra within the region of wavelength shorter than 200nm. The phosphor is a europium activated yttrium gadolinium borate phosphor represented by the formula{ [ ( Y.sub.1-x, Gd.sub.x ).sub.1-z B.sub.z ].sub.1-y Eu.sub.y }.sub.2 O.sub.3where x, y and z are defined by the ranges of 0.ltoreq.x.ltoreq.1, 0.001.ltoreq.y.ltoreq.0.1 and 0.25.ltoreq.z.ltoreq.0.75. More preferably, x, y and z are defined by the ranges of 0.10.ltoreq.x.ltoreq.0.60, 0.005.ltoreq.y.ltoreq.0.05 and 0.50.ltoreq.z.ltoreq.0.65.
摘要翻译：在由透明材料制成的气密容器中，包含磷光体，气体或气体混合物以及一对放电电极。放电间隙在0.1〜3.0mm的范围内，密封在容器内的气体或气体混合物的压力使得压力与放电间隙的乘积在30〜300Torr的范围内。气体或气体混合物在波长短于200nm的区域内具有放电辐射光谱。磷光体是由式{[（Y1-x，Gdx）1-zBz] 1-y Euy 2 O 3表示的铕活化的钇钆硼酸盐荧光体，其中x，y和z由0 < = x

15. 发明授权

US08330234B2 Semiconductor device and manufacturing process therefor 有权
标题翻译：半导体器件及其制造工艺
公开(公告)号：US08330234B2
公开(公告)日：2012-12-11
申请号：US12094755
申请日：2006-11-21
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L29/78 , H01L21/70 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/8238 , H01L21/336 , H01L21/3205 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823871 , H01L29/4975 , H01L29/66545
摘要： In a semiconductor device, a gate electrode having a uniform composition prevents deviation in a work function. Controlling a Vth provides excellent operation properties. The semiconductor device includes an NMOS transistor and a PMOS transistor with a common line electrode. The line electrode includes electrode sections (A) and (B) and a diffusion barrier region formed over an isolation region so that (A) and (B) are kept out of contact. The diffusion barrier region meets at least one of: (1) The diffusion coefficient in the above diffusion barrier region of the constituent element of the above electrode section (A) is lower than the interdiffusion coefficient of the constituent element between electrode section (A) materials; and (2) The diffusion coefficient in the above diffusion barrier region of the constituent element of the above electrode section (B) is lower than the interdiffusion coefficient of the constituent element between electrode section (B) materials.
摘要翻译：在半导体器件中，具有均匀组成的栅电极防止功函数的偏差。控制Vth提供优异的操作性能。半导体器件包括NMOS晶体管和具有公共线电极的PMOS晶体管。线电极包括电极部分（A）和（B）以及形成在隔离区域上的扩散阻挡区域，使得（A）和（B）保持不接触。扩散阻挡区域满足以下至少一个：（1）上述电极部分（A）的构成元素的上述扩散阻挡区域中的扩散系数低于电极部分（A）之间的构成元素的相互扩散系数，材料; （2）上述电极部（B）的构成元素的上述扩散阻挡区域的扩散系数低于电极部（B）材料之间的构成元素的相互扩散系数。

16. 发明授权

US07858462B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07858462B2
公开(公告)日：2010-12-28
申请号：US12046531
申请日：2008-03-12
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： H01L21/8238
CPC分类号： H01L21/28097 , H01L21/823835 , H01L29/66545
摘要： A method of manufacturing a semiconductor device including an NMOS transistor and a PMOS transistor is provided. The method includes: forming a silicon layer over a substrate through a gate insulating film; forming a first gate electrode and a second gate electrode by patterning the silicon layer, the first gate electrode being a gate electrode of the NMOS transistor, and the second gate electrode being a gate electrode of the PMOS transistor; selectively forming a silicon oxide film on the first gate electrode which is formed of silicon; after the selectively forming the silicon oxide film, forming a first metallic layer formed of a metal capable of forming a silicide over the first and second gate electrodes; and performing a first heat treatment such that a first silicide layer of a silicide of the first metallic layer is formed.
摘要翻译：提供一种制造包括NMOS晶体管和PMOS晶体管的半导体器件的方法。该方法包括：通过栅极绝缘膜在衬底上形成硅层; 通过图案化硅层形成第一栅电极和第二栅电极，第一栅电极是NMOS晶体管的栅电极，第二栅电极是PMOS晶体管的栅电极; 在由硅形成的第一栅电极上选择性地形成氧化硅膜; 在选择性地形成氧化硅膜之后，在第一和第二栅极上形成能够形成硅化物的金属形成的第一金属层; 以及进行第一热处理，使得形成第一金属层的硅化物的第一硅化物层。

17. 发明申请

US20090115002A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090115002A1
公开(公告)日：2009-05-07
申请号：US11922605
申请日：2006-06-20
申请人： Tooru Tatsumi , Masayuki Terai , Takashi Hase , Kensuke Takahashi
发明人： Tooru Tatsumi , Masayuki Terai , Takashi Hase , Kensuke Takahashi
IPC分类号： H01L29/78
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/42372 , H01L29/4975 , H01L29/66545
摘要： There is provided a semiconductor device including: a first field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in a P channel forming region; and a second field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in an N channel forming region on a semiconductor substrate, wherein in the first and second field effect transistor regions, the gate electrodes are composed primarily of a silicide of metal M represented as M(x)Si(1−x)(0
摘要翻译：提供了一种半导体器件，包括：第一场效应晶体管区域，包括形成在P沟道形成区域中的栅极绝缘膜，栅电极和栅极侧壁; 以及第二场效应晶体管区域，其包括形成在半导体衬底上的N沟道形成区域中的栅极绝缘膜，栅极电极和栅极侧壁，其中在第一和第二场效应晶体管区域中，栅电极主要由 M（x）Si（1-x）（0

18. 发明申请

US20080287303A1 Nb3Sn superconducting wire, precursor or same, and method for producing precursor 审中-公开
标题翻译： Nb3Sn超导线，前驱体等，以及前体的制造方法
公开(公告)号：US20080287303A1
公开(公告)日：2008-11-20
申请号：US12081475
申请日：2008-04-16
申请人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
发明人： Hiroyuki Kato , Takashi Hase , Kyoji Zaitsu
IPC分类号： H01B12/10 , H01L39/24 , H01B12/00
CPC分类号： H01L39/2409 , H01L39/14 , Y10T29/49014
摘要： A precursor for producing a Nb3Sn superconducting wire includes a bundle of single-element wires each including a Cu or Cu-based alloy matrix, Nb or Nb-based alloy filaments, at least one Sn or Sn-based alloy core, the Nb or Nb-based alloy filaments and at least one Sn or Sn-based alloy core being arranged in the Cu or Cu-based alloy matrix, an diffusion barrier layer around the periphery of the Cu or Cu-based alloy matrix, the inner diffusion barrier layer being composed of Nb or a Nb-based alloy, and a Cu or Cu-based alloy layer around the periphery of the diffusion barrier layer; an outer diffusion barrier layer around the periphery of the bundle of the single-element wires, the outer diffusion barrier layer being composed of Nb, a Nb-based alloy, Ta, a Ta-based alloy, or a combination thereof; and a stabilizing copper layer around the periphery of the outer diffusion barrier layer.
摘要翻译：用于制造Nb 3 Sn超导线的前体包括：包含Cu或Cu基合金基体，Nb或Nb基合金细丝，至少一种Sn或Sn的单元线束基于Nb或Nb的合金芯，并且在Cu或Cu基合金基体中布置有至少一种Sn或Sn基合金芯，围绕Cu或Cu基合金芯的周围的扩散阻挡层合金基体，内扩散阻挡层由Nb或Nb基合金构成，以及在扩散阻挡层周围的Cu或Cu基合金层; 所述外部扩散阻挡层围绕所述单个元件线束的周围，所述外部扩散阻挡层由Nb，Nb基合金，Ta，Ta基合金或其组合构成; 以及围绕外部扩散阻挡层的周边的稳定的铜层。

19. 发明授权

US06872995B2 Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device 失效
公开(公告)号：US06872995B2
公开(公告)日：2005-03-29
申请号：US10423974
申请日：2003-04-28
申请人： Takashi Hase
发明人： Takashi Hase
IPC分类号： C23C14/08 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/3205 , H01L21/8246 , H01L23/52 , H01L27/105 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/60
摘要： A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % interstitial oxygen atoms in the metal crystalline phase.

20. 发明授权

US06190577B1 Indium-substituted aluminate phosphor and method for making the same 失效
标题翻译：铟取代的铝酸盐荧光体及其制造方法
公开(公告)号：US06190577B1
公开(公告)日：2001-02-20
申请号：US09358251
申请日：1999-07-20
申请人： Takashi Hase , Sawsan Aziz
发明人： Takashi Hase , Sawsan Aziz
IPC分类号： C07K1162
CPC分类号： C09K11/7792 , C09D5/22 , C09K11/7734
摘要： A phosphor containing O, Al, In, at least one element M selected from a group consisting of Sr, Ca and Ba, and Eu, as an activator, where the M, the Al, the In and the Eu are present in an atomic ratio M:Al:In:Eu of m:2n(1−y):2n(y):a, 0.3
摘要翻译：含有O，Al，In的至少一种选自Sr，Ca和Ba的元素M和作为活化剂的Eu的荧光体，其中M，Al，In和Eu以原子比例M：Al：In：Eu：m：2n（1-y）：2n（y）：a，0.3

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