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11. 发明申请

US20090170023A1 PROCESS FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER 审中-公开
标题翻译：生产电子摄影成像的方法
公开(公告)号：US20090170023A1
公开(公告)日：2009-07-02
申请号：US12389180
申请日：2009-02-19
申请人： Akira Shimada , Hiroki Uematsu , Masataka Kawahara , Kyoichi Teramoto , Akio Maruyama , Toshihiro Kikuchi , Akio Koganei , Takayuki Sumida
发明人： Akira Shimada , Hiroki Uematsu , Masataka Kawahara , Kyoichi Teramoto , Akio Maruyama , Toshihiro Kikuchi , Akio Koganei , Takayuki Sumida
IPC分类号： G03G5/02
CPC分类号： G03G5/047 , G03G5/05 , G03G5/0525 , G03G5/10
摘要： A process for producing an electrophotographic photosensitive member. The electrophotographic photosensitive member includes a conductive support and a surface layer provided thereon containing at least a resin. The process has the step of forming a plurality of depressed portions on the surface layer by irradiation with laser light having a wavelength of 400 nm or less and having an output characteristic of a pulse width of 100 ns or less.
摘要翻译：一种用于制造电子照相感光构件的方法。电子照相感光构件包括导电支撑体和设置在其上的至少含有树脂的表面层。该方法具有通过用波长为400nm或更小的激光照射并且具有100ns或更小的脉冲宽度的输出特性在表面层上形成多个凹陷部分的步骤。

12. 发明申请

US20080096123A1 PROCESS FOR PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER 审中-公开
标题翻译：生产电子摄影成像的方法
公开(公告)号：US20080096123A1
公开(公告)日：2008-04-24
申请号：US11770006
申请日：2007-06-28
申请人： Akira Shimada , Hiroki Uematsu , Masataka Kawahara , Kyoichi Teramoto , Akio Maruyama , Toshihiro Kikuchi , Akio Koganei , Takayuki Sumida
发明人： Akira Shimada , Hiroki Uematsu , Masataka Kawahara , Kyoichi Teramoto , Akio Maruyama , Toshihiro Kikuchi , Akio Koganei , Takayuki Sumida
IPC分类号： G03G5/02
CPC分类号： G03G5/047 , G03G5/05 , G03G5/0525 , G03G5/10
摘要： A process for producing an electrophotographic photosensitive member is disclosed. The electrophotographic photosensitive member includes a conductive support and a surface layer provided thereon containing at least a resin. The process has the step of forming a plurality of depressed portions on the surface layer by irradiation with laser light having a wavelength of 400 nm or less and having an output characteristic of a pulse width of 100 ns or less.
摘要翻译：公开了一种用于制造电子照相感光构件的方法。电子照相感光构件包括导电支撑体和设置在其上的至少含有树脂的表面层。该方法具有通过用波长为400nm或更小的激光照射并且具有100ns或更小的脉冲宽度的输出特性在表面层上形成多个凹陷部分的步骤。

13. 发明申请

US20060163559A1 Organic thin film transistor and manufacturing method thereof 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20060163559A1
公开(公告)日：2006-07-27
申请号：US10533088
申请日：2004-03-31
申请人： Akio Koganei , Takamitsu Morota
发明人： Akio Koganei , Takamitsu Morota
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0516
摘要： There is provided an organic thin film transistor comprising: an organic substrate; a gate electrode; a gate insulating film; an organic semiconductor film; a source electrode; and a drain electrode, and in the organic thin film transistor, an average surface roughness Ra of the gate electrode which is in contact with the gate insulating film is 0.1 nm to 15 nm. The organic thin film transistor provides a stable performance characteristic even when a conductor film provided on a substrate whose shape is unstable and whose flatness is low as compared with a silicon wafer, such as a substrate made of a glass epoxy resin, is used as a gate electrode.
摘要翻译：提供了一种有机薄膜晶体管，包括：有机衬底; 栅电极; 栅极绝缘膜; 有机半导体膜; 源电极; 和漏电极，并且在有机薄膜晶体管中，与栅极绝缘膜接触的栅电极的平均表面粗糙度Ra为0.1nm〜15nm。有机薄膜晶体管即使当与硅晶片（诸如由玻璃环氧树脂制成的基板）相比，设置在形状不稳定并且平坦度低的基板上的导体膜也被用作稳定的性能特性，作为栅电极。

14. 发明授权

US6055179A Memory device utilizing giant magnetoresistance effect 有权
标题翻译：采用巨磁阻效应的存储器件
公开(公告)号：US6055179A
公开(公告)日：2000-04-25
申请号：US312845
申请日：1999-05-17
申请人： Akio Koganei , Naoki Nishimura
发明人： Akio Koganei , Naoki Nishimura
IPC分类号： G11C11/15 , G11C11/00 , G11C11/14
CPC分类号： G11C11/15
摘要： A memory device using giant magnetoresistance (GMR) effect, and an inexpensive memory device that has low power consumption, excels in memory performance, and is suitable for use in computer peripherals.The memory device utilizes giant magnetoresistance effect and includes a substrate with an insulating surface; a monocrystalline semiconductor layer formed on the insulating surface of the substrate, a switching element formed at least on part of the monocrystalline semiconductor layer, a magnetoresistive film formed on the insulating surface of the substrate, the magnetoresistive film comprising a first magnetic layer and a second magnetic layer which has a higher coercive force than the first magnetic layer and which is stacked on the first magnetic layer with a non-magnetic layer interposed between them, and a word line installed near the magnetoresistive film with an insulating layer interposed between them, and the switching element is connected electrically to either the magnetoresistive film or word line.
摘要翻译：使用巨磁阻（GMR）效应的存储器件以及具有低功耗的便宜的存储器件，具有优异的存储器性能，并且适用于计算机外围设备。存储器件利用巨磁电阻效应并且包括具有绝缘表面的衬底; 形成在所述基板的绝缘表面上的单晶半导体层，形成在所述单晶半导体层的至少一部分上的开关元件，形成在所述基板的绝缘表面上的磁阻膜，所述磁阻膜包括第一磁性层和第二磁性层磁性层具有比第一磁性层更高的矫顽力，并且在它们之间插入非磁性层而堆叠在第一磁性层上，以及安装在磁阻膜附近的字线，绝缘层位于它们之间，以及开关元件电连接到磁阻膜或字线。

15. 发明授权

US06987652B2 Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same 有权
标题翻译：锥形磁阻元件和使用其的非易失性固态存储器
公开(公告)号：US06987652B2
公开(公告)日：2006-01-17
申请号：US10260065
申请日：2002-10-01
申请人： Akio Koganei
发明人： Akio Koganei
IPC分类号： G11B5/39 , G11C11/15
CPC分类号： G11C11/15
摘要： The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S1 of the first magnetic layer and a base area S2 of the second magnetic layer is S1>S2.
摘要翻译：本发明提供一种磁阻元件，其中矫顽力不同的第一磁性层和第二磁性层，以及设置在磁性层之间的非磁性层，磁阻元件的边缘是锥形的，或是磁阻元件，其中第一磁性层和第二磁性层以及设置在磁性层之间的非磁性层，其中第一磁性层的矫顽力大于第二磁性层的矫顽力，其中第一磁性层的基极面积S1与第二磁性层的基极面积S 2之间的关系为S 1> S 2。

16. 发明申请

US20110239941A1 EVAPORATION APPARATUS 审中-公开
标题翻译：蒸发器
公开(公告)号：US20110239941A1
公开(公告)日：2011-10-06
申请号：US13074124
申请日：2011-03-29
申请人： Yoshiyuki Nakagawa , Masanori Yoshida , Masamichi Masuda , Junji Ohyama , Akio Koganei , Naotoshi Miyamachi , Hirohito Yamaguchi , Tetsuya Karaki , Nobutaka Ukigaya , Toshiaki Yoshikawa
发明人： Yoshiyuki Nakagawa , Masanori Yoshida , Masamichi Masuda , Junji Ohyama , Akio Koganei , Naotoshi Miyamachi , Hirohito Yamaguchi , Tetsuya Karaki , Nobutaka Ukigaya , Toshiaki Yoshikawa
IPC分类号： C23C16/448 , C23C14/34
CPC分类号： C23C14/042
摘要： Provided is an evaporation apparatus which reduces deformation of a mask, improves adhesion between a substrate and an evaporation mask, and improves accuracy of dividing a region on which a film is to be formed and a region on which the film is not to be formed. The evaporation apparatus includes a pressing mechanism for pressing a film forming substrate disposed on an evaporation mask including a magnetic material against the evaporation mask. The pressing mechanism includes a magnet for attracting the mask toward at least a corner portion of the film forming substrate.
摘要翻译：本发明提供一种降低掩模变形的蒸发装置，提高基板与蒸发掩模之间的粘附性，提高将要形成膜的区域的分割精度和不形成膜的区域。蒸发装置包括用于将设置在包括磁性材料的蒸发掩模上的成膜基板压靠在蒸发掩模上的按压机构。按压机构包括用于将掩模吸引至成膜基板的至少角部的磁体。

17. 发明申请

US20060192197A1 Organic thin film transistor 审中-公开
标题翻译：有机薄膜晶体管
公开(公告)号：US20060192197A1
公开(公告)日：2006-08-31
申请号：US10551092
申请日：2004-03-26
申请人： Akio Koganei
发明人： Akio Koganei
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0024 , H01L51/107
摘要： An organic thin film transistor utilizing an organic semiconductor film is composed of a first substrate, a gate electrode, a gate insulation film, an organic semiconductor film, a source electrode, a drain electrode, a protective film and a second substrate, and produced by forming a gate electrode, a gate insulation film, an organic semiconductor film, a source electrode, and a drain electrode on a first substrate, forming a protective film on a second substrate, and superposing a surface, bearing the organic semiconductor film, of the first substrate upon a surface, bearing the protective film, of the second substrate.
摘要翻译：利用有机半导体膜的有机薄膜晶体管由第一基板，栅电极，栅极绝缘膜，有机半导体膜，源电极，漏电极，保护膜和第二基板构成，并由在第一基板上形成栅电极，栅极绝缘膜，有机半导体膜，源电极和漏电极，在第二基板上形成保护膜，并且将承载有机半导体膜的表面重叠，第一基板在第二基板的表面上承载保护膜。

18. 发明授权

US5700326A Microwave plasma processing apparatus 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US5700326A
公开(公告)日：1997-12-23
申请号：US395191
申请日：1995-02-27
申请人： Kazumasa Takatsu , Takashi Kurokawa , Hiroshi Echizen , Akio Koganei , Shuichiro Sugiyama , Toshio Adachi
发明人： Kazumasa Takatsu , Takashi Kurokawa , Hiroshi Echizen , Akio Koganei , Shuichiro Sugiyama , Toshio Adachi
IPC分类号： C23C16/511 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192 , H01J37/32275
摘要： A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.
摘要翻译：微波等离子体处理装置包括真空处理室，设置在真空处理室内的基板，耦合到真空处理室的微波导件和用于在电场方向上分隔微波的翅片。散热片的长度不同，可以提高大面积的基板上的膜厚分布的均匀性。

19. 发明授权

US06829121B2 Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element 有权
标题翻译：磁阻元件，具有磁阻元件的存储元件和使用存储元件的存储器
公开(公告)号：US06829121B2
公开(公告)日：2004-12-07
申请号：US10113983
申请日：2002-04-02
申请人： Takashi Ikeda , Akio Koganei , Kazuhisa Okano
发明人： Takashi Ikeda , Akio Koganei , Kazuhisa Okano
IPC分类号： G11B5127
CPC分类号： G11C11/16 , H01L43/08 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/12465 , Y10T428/12986 , Y10T428/24942
摘要： A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a perpendicular magnetization film. A magnetic film whose easy axis of magnetization is inclined from a direction perpendicular to the film surface is formed at a position where the magnetic film contacts the perpendicular magnetization film but does not contact the nonmagnetic film. A memory, magnetic element, magnetoresistive element, and magnetic element manufacturing method are also disclosed.
摘要翻译：磁阻膜包括非磁性膜，以及在非磁性膜的两侧形成有磁性膜的结构。至少一个磁性膜是垂直磁化膜。在磁性膜与垂直磁化膜接触但不与非磁性膜接触的位置处形成易磁化轴从垂直于膜表面的方向倾斜的磁性膜。还公开了一种存储器，磁性元件，磁阻元件和磁性元件制造方法。

20. 发明授权

US06480411B1 Magnetoresistance effect type memory, and method and device for reproducing information from the memory 有权
标题翻译：磁电阻效应型存储器，以及用于从存储器再现信息的方法和装置
公开(公告)号：US06480411B1
公开(公告)日：2002-11-12
申请号：US09695075
申请日：2000-10-25
申请人： Akio Koganei
发明人： Akio Koganei
IPC分类号： G11C1100
CPC分类号： G11C11/15 , B82Y10/00 , H01L27/222 , H01L43/08 , Y10T428/12465
摘要： A magnetoresistance effect type memory in and from which information is recorded and reproduced by utilizing a magnetoresistance effect comprises a substrate, a magnetoresistance film provided on the substrate, which comprises a reproducing layer, a memory layer and a non-magnetic layer provided between the reproducing layer and the memory layer, and a magnetization-fixing layer provided on the substrate, which orients a magnetization of the reproducing layer to one direction. In the magnetoresistance effect type memory a conductor wire may be disposed on the magnetoresistance film on a side opposite to the substrate. A recording-reproducing method for the magnetoresistance effect type memory comprises the steps of applying any one of positive and negative electric current pulses to the conductor wire, and detecting a change in resistance of the magnetoresistance film to reproduce information recorded in the memory layer. A recording-reproducing device for recoding and reproducing information in and from the magnetoresistance effect type memory comprises a means for supplying a uni-directional electric current to said conductor wire, and a means for detecting a change in resistance of said magnetoresistance film to reproduce information recorded in the memory.
摘要翻译：通过利用磁阻效应来记录和再现信息的磁阻效应型存储器包括基板，设置在基板上的磁阻膜，其包括再现层，存储层和设置在再现层之间的非磁性层层和存储层，以及设置在基板上的磁化固定层，其将再现层的磁化定向到一个方向。在磁阻效应型存储器中，可以在与基板相反的一侧的磁阻膜上设置导线。一种用于磁阻效应型存储器的记录再现方法包括以下步骤：将正电流脉冲和负电流脉冲中的任何一个施加到并且检测磁阻膜的电阻变化以再现记录在存储层中的信息。一种用于在磁电阻效应型存储器中记录和再现信息的记录再现装置包括用于向所述导体线提供单向电流的装置，以及用于检测所述磁阻膜的电阻变化以再现信息的装置记录在记忆中。

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