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11. 发明申请

US20130051417A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20130051417A1
公开(公告)日：2013-02-28
申请号：US13453743
申请日：2012-04-23
申请人： Takamichi SUMITOMO , Takashi KYONO , Masaki UENO , Yusuke YOSHIZUMI , Yohei ENYA , Masahiro ADACHI , Shimpei TAKAGI , Katsunori YANASHIMA
发明人： Takamichi SUMITOMO , Takashi KYONO , Masaki UENO , Yusuke YOSHIZUMI , Yohei ENYA , Masahiro ADACHI , Shimpei TAKAGI , Katsunori YANASHIMA
IPC分类号： H01S5/30
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。欧姆电极通过绝缘层的开口与第三区域接触。第一部分具有延伸到第一端面边缘的第一臂。第三部分远离第一端面边缘。

12. 发明申请

US20130009202A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物半导体器件，制备III族氮化物半导体器件的方法
公开(公告)号：US20130009202A1
公开(公告)日：2013-01-10
申请号：US13538513
申请日：2012-06-29
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。第一和第二接触层包括p型氮化镓基半导体。第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。发光层包括氮化镓基半导体。第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。第二接触层的厚度在1〜50nm的范围内。

13. 发明申请

US20120327967A1 GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件，外延衬底，制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120327967A1
公开(公告)日：2012-12-27
申请号：US13480178
申请日：2012-05-24
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/323 , H01L33/32
CPC分类号： H01S5/3201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.
摘要翻译：氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

14. 发明申请

US20120269222A1 NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE 有权
标题翻译：氮化物半导体激光和外延衬底
公开(公告)号：US20120269222A1
公开(公告)日：2012-10-25
申请号：US13366636
申请日：2012-02-06
申请人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/343
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

15. 发明申请

US20120142130A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120142130A1
公开(公告)日：2012-06-07
申请号：US13335560
申请日：2011-12-22
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴倾斜的支撑基底的半极性表面。第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。在激光结构中，第一表面与第二表面相对。第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

16. 发明申请

US20120119240A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120119240A1
公开(公告)日：2012-05-17
申请号：US13294034
申请日：2011-11-10
申请人： Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
发明人： Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
IPC分类号： H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3202 , H01S5/3211
摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.
摘要翻译：提供一种氮化物半导体发光器件。核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。核心半导体区域包括有源层和载流子阻挡层。第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

17. 发明申请

US20120088326A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120088326A1
公开(公告)日：2012-04-12
申请号：US13277806
申请日：2011-10-20
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

18. 发明申请

US20110309328A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
公开(公告)号：US20110309328A1
公开(公告)日：2011-12-22
申请号：US13189194
申请日：2011-07-22
申请人： Takashi KYONO , Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
发明人： Takashi KYONO , Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
IPC分类号： H01L33/04
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
摘要翻译：提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0

19. 发明申请

US20110042644A2 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20110042644A2
公开(公告)日：2011-02-24
申请号：US12752647
申请日：2010-04-01
申请人： Masaki UENO , Yohei ENYA , Takashi KYONO , Katsushi AKITA , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Takao NAKAMURA
发明人： Masaki UENO , Yohei ENYA , Takashi KYONO , Katsushi AKITA , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Takao NAKAMURA
IPC分类号： H01L33/04 , H01L33/00 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

20. 发明申请

US20110012126A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110012126A1
公开(公告)日：2011-01-20
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi SUMITOMO , Masaki UENO , Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI
发明人： Takamichi SUMITOMO , Masaki UENO , Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI
IPC分类号： H01L33/30 , H01L33/02
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面和倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

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