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11. 发明申请

US20080003441A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system 审中-公开
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体和系统接触的部件
公开(公告)号：US20080003441A1
公开(公告)日：2008-01-03
申请号：US11878976
申请日：2007-07-30
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B32B15/04
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm
摘要翻译：本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

12. 发明申请

US20070210715A1 Vacuum Tube And Vacuum Tube Manufacturing Apparatus And Method 失效
标题翻译：真空管及真空管制造装置及方法
公开(公告)号：US20070210715A1
公开(公告)日：2007-09-13
申请号：US10594896
申请日：2005-03-31
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01J7/02 , H01J9/38 , H01J9/46
CPC分类号： H01J9/395 , H01J7/02 , H01J9/38 , H01J9/385 , H01J17/20 , H01J21/00 , H01J37/18 , H01J61/20 , H01J61/24
摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.
摘要翻译：对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系放电允许通过上述剩余气体减少不利影响。具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

13. 发明申请

US20070096289A1 A Multilayered circuit substrate with semiconductor device incorporated therein 有权
标题翻译：具有并入其中的半导体器件的多层电路基板
公开(公告)号：US20070096289A1
公开(公告)日：2007-05-03
申请号：US11529319
申请日：2006-09-29
申请人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
发明人： Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01L23/24 , H01L23/12 , H01L23/22
CPC分类号： H01L23/5389 , H01L23/49827 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/8203 , H01L2224/82047 , H01L2224/92244 , H01L2224/97 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/15331 , H01L2924/30107 , H01L2924/3511 , H01L2224/82
摘要： For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.
摘要翻译：为了提供半导体元件内置型多层电路板，其中半导体元件紧密接合到绝缘基板的凹部，以在半导体元件的工作温度区域有效地分散通过绝缘基板从半导体元件产生的热量半导体元件电路板，可靠地将诸如半导体元件等的电子部件的电连接在短布线中，并且能够实现半导体元件的高密度安装，小型化和提高工作速度，提出了半导体元件内置型多层电路板，其通过层叠多个半导体元件内置型板而形成，所述多个半导体元件内置型基板包括绝缘基板和容纳在其中形成的凹部中的半导体元件，其特征在于，所述绝缘基板的线膨胀系数和线性膨胀公司温度范围为20-300℃的半导体元件的效率小于1×10 -5 / K。

14. 发明授权

US07103990B2 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US07103990B2
公开(公告)日：2006-09-12
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： F26B5/08
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

15. 发明授权

US06273477B1 Gasket and pipe joint 有权
标题翻译：垫圈和管接头
公开(公告)号：US06273477B1
公开(公告)日：2001-08-14
申请号：US09253942
申请日：1999-02-22
申请人： Tadahiro Ohmi , Michio Yamaji , Tsutomu Shinohara , Nobukazu Ikeda , Akihiro Morimoto
发明人： Tadahiro Ohmi , Michio Yamaji , Tsutomu Shinohara , Nobukazu Ikeda , Akihiro Morimoto
IPC分类号： F16L2500
CPC分类号： C22C38/44 , F16L19/0212 , Y10S285/917
摘要： A pipe joint comprises a pair of tubular joint members, an annular gasket interposed between opposed end faces of the two joint members, and threaded means for joining the two joint members. Each of the joint members is prepared from a stainless steel having a surface with a Vickers hardness of at least 300. The gasket is prepared from a stainless steel comprising, in ratio by weight, 12.90 to 15.00% of Ni, 16.50 to 18.00% of Cr, 2.00 to 3.00% of Mo, up to 0.02% of C, up 0.30% of Si, up to 0.40% of Mn, up to 0.03% of P, up to 0.003% of S, up to 0.25% of Cu and up to 0.01% of Al, the gasket having a surface with a Vickers hardness of 90 to 160.
摘要翻译：管接头包括一对管状接头构件，插入在两个接头构件的相对端面之间的环形垫圈，以及用于接合两个接头构件的螺纹装置。每个接合构件由具有维氏硬度至少为300的表面的不锈钢制成。垫圈由不锈钢制成，其包含按重量计12.10％至15.00％的Ni，16.50至18.00％的 Cr，2.00〜3.00％的Mo，高达0.02％的C，0.30％的Si，至多0.40％的Mn，至多0.03％的P，至多0.003％的S，至多0.25的Cu和高达0.01％的Al，垫圈具有维氏硬度为90至160的表面。

16. 发明授权

US5711197A Tube facing machine 失效
标题翻译：管面机
公开(公告)号：US5711197A
公开(公告)日：1998-01-27
申请号：US627549
申请日：1996-04-04
申请人： Tadahiro Ohmi , Eiji Ideta , Akihiro Morimoto
发明人： Tadahiro Ohmi , Eiji Ideta , Akihiro Morimoto
IPC分类号： B23B5/00 , B23B5/16
CPC分类号： B23B5/163 , Y10T408/5633 , Y10T82/22
摘要： A cutter for facing ends of tubes has a cutting edge perpendicular to the axis of a drive shaft and extending obliquely from a plane containing a reference side face of the cutter. The cutter has a base end portion fitted in a cutter mount groove which is defined by a reference side face a specified distance away from the drive shaft axis. The cutter is positioned as shifted a predetermined distance along the length of the groove, with the cutter reference side face bearing on the groove-defining reference side face, whereby the cutter is adapted to cut the tube end in a direction a predetermined angle outward with respect to a tangential direction of the tube at the cutting position.
摘要翻译：用于面对管的端部的切割器具有垂直于驱动轴的切割刃并且从包含切割器的参考侧面的平面倾斜延伸。切割器具有安装在刀具安装槽中的基端部分，该切削器安装槽由参考侧面与驱动轴轴线规定距离限定。刀具被定位成沿着槽的长度偏移预定的距离，刀具参考侧面承载在槽限定的基准侧面上，由此刀具适于沿着预定角度的方向向外切割管端，相对于切割位置处的管的切线方向。

17. 发明授权

US5530283A Lead frame and lead frame material 失效
标题翻译：引线框架和引线框架材料
公开(公告)号：US5530283A
公开(公告)日：1996-06-25
申请号：US518529
申请日：1995-08-23
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Tsutomu Shinohara , Akihiro Morimoto , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Tsutomu Shinohara , Akihiro Morimoto , Yasuyuki Shirai
IPC分类号： H01L23/50 , H01L23/495
CPC分类号： H01L23/49582 , H01L2224/45124 , H01L2224/45144 , H01L24/45 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01322
摘要： An object of the present invention is to provide a lead frame and a material for lead frame which insure excellent bonding and enables substantial reduction of time for production because such processes as plating are not required and furthermore are excellent in abration resistance.The present invention is characterized in that a silver layer having a construction where amplitude of a refracted ray refracted on the (200) surface is 1/3 or more of the amplitude of refracted X ray refracted on the (111) surface comprises an outer lead section of the base material for the lead frame. The base material is preferably copper, copper-alloy, iron, or iron alloy. The silver layer is formed, for instance, by means of silver plating, and the thickness is preferably in a range from 8 m to 30 m. An intermediate layer may be provided between a surface of the base material and the silver layer.
摘要翻译：本发明的目的是提供一种引线框架和引线框架材料，其确保良好的接合，并且能够显着缩短生产时间，因为不需要电镀等工艺，并且耐磨性也优异。本发明的特征在于，具有在（200）表面折射的折射线的振幅为（111）面折射的折射X射线的振幅的1/3以上的结构的银层包括外引线用于引线框架的基材的截面。基材优选为铜，铜合金，铁或铁合金。银层例如通过镀银形成，并且厚度优选在8μm至30μm的范围内。可以在基材的表面和银层之间设置中间层。

18. 发明授权

US08137787B1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas 失效
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体接触的部件和用于供应流体和排出气体的系统
公开(公告)号：US08137787B1
公开(公告)日：2012-03-20
申请号：US09889269
申请日：2000-01-13
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B32B15/04 , B32B9/00 , B32B19/00
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film, excellent in corrosion resistance, without containing an oxide film of other metal onto the metallic material. The chromium-oxide passivation film, excellent in corrosion resistance, without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for safely supplying fluid with hard corrosivity is able to be provided. One step of forming the passivation film consisting of a chromium oxide layer by giving heat treatment, in an oxidizing atmosphere, after coating chromium on the metallic material having a surface roughness (Ra) not more than 1.5 μm.
摘要翻译：本发明的目的是形成耐腐蚀性优异的氧化铬膜，而不含金属材料上的其它金属的氧化膜。可以廉价且短时间地形成不含有其它金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供用于安全地供给具有硬腐蚀性的流体的流体供给系统。在表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬后，在氧化气氛中进行热处理，形成由氧化铬层构成的钝化膜的一个步骤。

19. 发明授权

US07995001B2 Antenna for portable terminal and portable terminal using same 失效
标题翻译：天线用于便携式终端和便携终端使用相同
公开(公告)号：US07995001B2
公开(公告)日：2011-08-09
申请号：US10546191
申请日：2004-02-17
申请人： Tadahiro Ohmi , Akihiro Morimoto , Fumiaki Nakamura
发明人： Tadahiro Ohmi , Akihiro Morimoto , Fumiaki Nakamura
IPC分类号： H01Q15/00
CPC分类号： H01Q9/0485
摘要： A dielectric resonator antenna which emits an electric wave by having a dielectric body resonate is disclosed. A magnetic material is contained in the electric body, thereby increasing the relative permeability to more than 1 and lowering the relative permittivity. Consequently, the Q-value of the resonance can be lowered while maintaining the rate of wavelength shortening. With this technique, a broadband dielectric resonator antenna can be realized.
摘要翻译：公开了一种通过具有电介质体共振来发射电波的介质谐振器天线。磁性材料被包含在电体中，从而将相对磁导率提高到大于1并降低相对介电常数。因此，可以在保持波长缩短率的同时降低谐振的Q值。利用这种技术，可以实现宽带介质谐振器天线。

20. 发明申请

US20090272721A1 Athmosphere-Controlled Bonding Apparatus, Bonding Method, and Electronic Device 审中-公开
标题翻译：气氛控制接合设备，接合方法和电子设备
公开(公告)号：US20090272721A1
公开(公告)日：2009-11-05
申请号：US11992667
申请日：2005-09-28
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： B23K11/16 , B23K11/00
CPC分类号： H01L24/81 , B23K20/004 , B23K20/02 , B23K20/10 , B23K2101/40 , H01L21/67144 , H01L24/75 , H01L24/78 , H01L24/85 , H01L2224/75 , H01L2224/78 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/85 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19041 , H01L2924/3025 , H01L2224/48 , H01L2224/45099
摘要： In a bonding apparatus for bonding under pressure a pressure-bonding portion, the concentration of water in a pressure-bonding portion atmosphere inside the apparatus is set smaller than that in an atmosphere outside the apparatus, thereby enabling pressure bonding under low-temperature and low-pressure conditions. In this case, the amount of adsorbed water on each surface of a bonding metal terminal and a to-be-bonded metal terminal forming the pressure-bonding portion is set to 1×1016 molecules/cm2 or less.
摘要翻译：在压力接合部的接合装置中，设备内部的压接部气氛中的水的浓度设定为小于设备外部的气氛中的水分浓度，从而能够在低温低温下进行压接压力条件。在这种情况下，将形成压接部的接合金属端子和被接合金属端子的各表面上的吸附水量设定为1×1016分/ cm 2以下。

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