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11. 发明专利

JP2002176054A WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002176054A
公开(公告)日：2002-06-21
申请号：JP2000370601
申请日：2000-12-05
申请人： EBARA CORP
发明人： KOGURE NAOAKI , HORIE KUNIAKI , ARAKI YUJI
IPC分类号： H01L21/285 , H01L21/203 , H01L21/312 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a wiring structure that the junction between diffusion barrier layers consisting of metal or compound thin layers in contact with an interlayer insulating film layer containing a low-dielectric constant organic matter, as its main component is strong and a peeling or a desorption is never generated at the interface between the interlayer insulating film layer and the diffusion barrier layers, and to provide the manufacturing method of the wiring structure. SOLUTION: A wiring structure is constituted by a method, where diffusion barrier layers consisting of metal or compound thin layers in contact with an interlayer insulating film layer containing a low-dielectric constant organic matter as its main component are deposited and covered and a conducting part is provided in contact with the diffusion barrier layers, and a mixing region (mixing layer 31) in a state that atoms or molecules constituting the members on both sides of the region are mixed with each other is formed in the vicinity of the interface between the interlayer insulating film layer (organic insulating film layer) 30 and the diffusion barrier layers by irradiating high-speed particles in the vicinity of the interface.

12. 发明专利

JP2002164299A SUBSTRATE-HEATING EQUIPMENT AND SUBSTRATE-PROCESSING EQUIPMENT 失效
公开(公告)号：JP2002164299A
公开(公告)日：2002-06-07
申请号：JP2000357820
申请日：2000-11-24
申请人： EBARA CORP
发明人： HORIE KUNIAKI , KOGURE NAOAKI , ARAKI YUJI
IPC分类号： G01J5/02 , G01J5/00 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a substrate-heating equipment which comprises a substrate temperature measuring means which can detect the radiation energy, even from a low temperature substrate in the presence of disturbances penetrated through the substrate and can make accurate measurement of the temperature, and also to provide a substrate-processing equipment using the substrate-heating equipment. SOLUTION: The substrate-heating equipment comprises a substrate 12 to be processed, a substrate mounting table 11, and an infrared lamp heater 13 using infrared rays disposed on the opposite side from the substrate-mounting table 11. The substrate temperature measuring means for measuring the temperature of the substrate 12 to be processed, consists of a temperature sensor or temperature sensor receiving section 16 for measuring the temperature of the substrate 12 to be processed by detecting the radiation energy from the substrate 12 and is provided on the substrate mounting table 11 of the substrate. In the substrate temperature measuring means, between the infrared lamp heater 13 and the substrate 12 to be processed, at least a double structure of glass boards 14b and 14c which have the same optical characteristics is installed, apart from a protective tube of the infrared lamp heater 13 itself, at least at the time of measuring the substrate temperature, and the temperature of the glass board 14c disposed closer to the substrate 12 to be processed is kept sufficiently lower than that of the substrate 12 to be processed.

13. 发明专利

JP2002025943A SUBSTRATE FILM FORMING METHOD 失效
公开(公告)号：JP2002025943A
公开(公告)日：2002-01-25
申请号：JP2000211257
申请日：2000-07-12
申请人： EBARA CORP
发明人： HORIE KUNIAKI , KOGURE NAOAKI , ARAKI YUJI
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a substrate film forming method for filling a recessed part of a substrate where the recessed part such as a groove and a hole for wiring pattern is formed and a barrier layer is formed on the inner surface of the recessed part in the center without the occurrence of seams and voids. SOLUTION: In this substrate film forming method, a film is formed on the surface of a substrate where fine recessed parts of a wiring pattern are formed on the surface, and the barrier layer 6 is formed on the inner face of the recessed part 2. A film is formed by changing active degrees on the sidewall of the recessed part 2 and the barrier layer 6 surface of the base. Thus, a film can be formed (filling of the recessed part) in the center of the recessed part 2 without the occurrence of seams and voids.

14. 发明专利

JP2001303252A MATERIAL GENERATING METHOD AND APPARATUS THEREOF 失效
公开(公告)号：JP2001303252A
公开(公告)日：2001-10-31
申请号：JP2000123000
申请日：2000-04-24
申请人： EBARA CORP
发明人： KOGURE NAOAKI , HORIE KUNIAKI , ARAKI YUJI
IPC分类号： C23C16/455 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a material generating method by which only a material to be generated (for example, a metal copper) can be extracted, and an apparatus thereof. SOLUTION: A gas constituting a main raw material, a gas constituting an auxiliary raw material, a gas constituting a carrying medium, etc., are allowed to flow into a reaction chamber 10 from a raw material feeder 23, and the chemical reaction is generated between the gases in the reaction chamber 10 to form a film (a metal copper layer) on a surface of a substrate W. A chemical species consisting of an element having the atomic weight of at least 4 (for example, argon) in an energy state higher than the ground state is introduced into the reaction chamber 10 from an active species generating apparatus 19. The chemical reaction is generated in the gases by utilizing the energy of the chemical species to form the material.

15. 发明专利

JP2001144128A PRINTING METHOD OF CONDUCTOR 失效
公开(公告)号：JP2001144128A
公开(公告)日：2001-05-25
申请号：JP32406299
申请日：1999-11-15
申请人： EBARA CORP
发明人： KOGURE NAOAKI
IPC分类号： H01L21/027 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a printing method of conductor, which enables formation of a finer, intact conductor pattern free of defects such as cavities and bubbles at a relatively low temperature. SOLUTION: This method includes a process where a resist 12 is provided on the surface of a substrate 10 along the pattern, a process where an ultrafine particles solution 20, which is made by dispersing ultrafine particles in a prescribed solvent, is made to contact with the whole surfaces of the substrate 10 and resist 12, and they are dried and baked, then the whole surfaces of substrate 10 and resist 12 are coated with a metal film 22, a process where a conductor 24 is embedded through plating into a recess 14 walled by the resist 12, and a process where unwanted portions of the conductor 24 and resist 12 are removed to obtain a pattern made of the conductor 24 embedded in the recess 14.

16. 发明专利

JP2001023988A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001023988A
公开(公告)日：2001-01-26
申请号：JP19945299
申请日：1999-07-13
申请人： EBARA CORP
发明人： KOGURE NAOAKI , HORIE KUNIAKI , SATAKE TORU
IPC分类号： H01L21/3205 , H01L21/28 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device and its manufacturing method to enable strong bonding between a wiring layer and an underlying anti-diffusion layer (barrier layer), even when the wiring layer is formed by chemical vapor deposition(CVD). SOLUTION: Between an anti-diffusion layer (barrier) 2 and an adjacent wiring layer 4 in a semiconductor device, there is a thin intermediate layer 3, which is produced by combining some or all of the components of the anti- diffusion layer (barrier layer) 2 and some or all of the components of the wiring layer 4 at a fixed ratio or at a variable ratio between 0 and a specified finite value according to the position.

17. 发明专利

JP2000012066A SOLUTION TYPE SECONDARY BATTERY 失效
公开(公告)号：JP2000012066A
公开(公告)日：2000-01-14
申请号：JP18970298
申请日：1998-06-19
申请人： EBARA CORP
发明人： WADA TAKETAKA , AKAI YUICHI , KOGURE NAOAKI
IPC分类号： H01L31/04 , H01M8/18
摘要： PROBLEM TO BE SOLVED: To provide a solution type secondary battery requiring no external tank for storing an electrolyte or liquid feeding equipment and having a compact structure easy to maintain and management and a high battery efficiency. SOLUTION: This solution type secondary battery has a layer structure consisting of positive and negative electrode plates 2a, 2b and positive and negative electrolyte containing layers 2a, 2b arranged between them facing to each other with a separator 3 interposed in between, and it performs charge and/or discharge by the oxidation-reduction reaction of an electrolyte. In this battery, the layer structure is folded at least once.

18. 发明专利

JPH1197441A FORMATION OF MULTILAYER EMBEDDED CU WIRING AND STRUCTURE OF MULTILAYERED EMBEDDED CU WIRING 失效
公开(公告)号：JPH1197441A
公开(公告)日：1999-04-09
申请号：JP27200197
申请日：1997-09-18
申请人： EBARA CORP
发明人： KOGURE NAOAKI , INOUE HIROAKI
IPC分类号： H01L23/52 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To prevent oxidation and decomposition of the exposed surface of an exposed Cu wiring halfway the process for providing the multilayer of the embedded Cu wiring. SOLUTION: An SiO2 insulating layer 10 is formed. At the same time, an embedded Cu wiring 15 is formed in the SiO2 layer 10. Furthermore, the surface of the SiO2 insulating layer 10 is flattened by a chemical machinery polishing method. This process is repeated by a plurality of times. Thus, the multilayer embedded Cu wiring is formed on the surface of a semiconductor wafer. An Ag protecting film 17 is formed on the exposing surface of the Cu wiring 15 exposed at the time of the above described flattening. The formation of the Ag protecting film 17 is performed by the displacement plating of the exposed surface of the Cu wiring 15 with Ag.

19. 发明专利

JPH1192957A METHOD FOR PACKING MICRORECESSES AND APPARATUS THEREFOR 失效
公开(公告)号：JPH1192957A
公开(公告)日：1999-04-06
申请号：JP26930797
申请日：1997-09-16
申请人： EBARA CORP
发明人： KOGURE NAOAKI
IPC分类号： C23C18/16 , C23C18/31 , C25D3/38 , C25D5/48 , C25D7/12 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To enable the use of materials, such as copper and copper alloys, having a low specific resistance as a packing material by immersing base materials having microrecesses into a plating liquid and rotating a plating tank at a prescribed rotating speed, thereby packing the prescribed material into the recesses. SOLUTION: The plating tank 10 in which the many semiconductor base materials 1 are housed is constituted nearly to an annular shape. The inside wall of the plating tank 10 and a revolving shaft 11 are connected by spokes 12. The plating tank 10 is rotated at the prescribed rotating speed during a plating stage. The surfaces of the semiconductor base materials 1 are arranged in a direction perpendicular to the radial direction of the ring and the depth direction of the microrecesses, i.e., contact holes and grooves, is the radial direction of the ring. The plating liquid is, therefore, gradually infiltrated into the contact holes and grooves which are the microrecesses by the centrifugal force generated by rotating of the plating tank 10. Consequently, the copper, etc., may be well packed even into the microrecesses having a high aspect ratio.

20. 发明专利

JPH1192949A DEVICE FOR PLATING WIRING ON SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH1192949A
公开(公告)日：1999-04-06
申请号：JP26933697
申请日：1997-09-16
申请人： EBARA CORP
发明人： KOGURE NAOAKI , INOUE HIROAKI
IPC分类号： C23C18/16 , C23C18/31
摘要： PROBLEM TO BE SOLVED: To provide a device for plating wiring on a semiconductor wafer by which a plating soln. is uniformly infiltrated into wiring parts constituted of minute grooves and minute holes on a semiconductor wafer surface and thereby wiring of uniform film thickness can be obtained and degradation of the plating soln. and plating deposition at regions except objective plating regions can be prevented. SOLUTION: The device is provided with an evacuation mechanism evacuating a plating reaction vessel 10 (such as a vacuum pump 19), a wafer holder 11 holding the semiconductor wafer 12, a plating soln. supplying mechanism provided with a plating soln. ejecting nozzle 13 for ejecting the plating soln. and a plating soln. discharging mechanism for discharging the plating soln. into the plating reaction vessel 10. The semiconductor wafer 12 is held by the wafe holder 11. The wiring part constituted of minute grooves and/or minute holes on the surface of the semiconductor wafer 12 is degassed by evacuating the gas in plating reaction vessel 10 by the evacuation mechanism before executing electroless plating. Then, the plating soln. is ejected out of the plating soln. ejecting nozzle 13 of the plating soln. supplying mechanism toward the wiring part on the surface of the semiconductor wafer 12. After finish of plating, the plating soln. in the plating reaction vessel is discharged by the plating soln. discharging mechanism.

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