专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

AU2004292125A1 Method for operating a data storage apparatus employing passive matrix addressing 未知
公开(公告)号：AU2004292125A1
公开(公告)日：2005-06-02
申请号：AU2004292125
申请日：2004-11-24
申请人： THIN FILM ELECTRONICS ASA
发明人： KARLSSON CHRISTER , OJAKANGAS NICKLAS , GUDESEN HANS GUDE , NORDAL PER-ERIK , CARLSSON JOHAN , HAMBERG PER
IPC分类号： G11C11/22 , G06F12/02 , G11C20060101 , G11C7/02 , G11C8/06 , G11C8/12 , G11C8/18
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

12. 发明专利

DK1299885T3 未知
公开(公告)号：DK1299885T3
公开(公告)日：2005-05-17
申请号：DK01975041
申请日：2001-07-06
申请人： THIN FILM ELECTRONICS ASA
发明人： NORDAL PER-ERIK , GUSTAFSSON GOERAN , CARLSSON JOHAN , GUDESEN HANS GUDE , THOMPSON MICHAEL
IPC分类号： G09G3/20 , G11C7/00 , G11C8/00 , G11C11/22

13. 发明专利

NO318368B1 未知
公开(公告)号：NO318368B1
公开(公告)日：2005-03-07
申请号：NO20014136
申请日：2001-08-24
申请人： THIN FILM ELECTRONICS ASA
发明人： CARLSSON JOHAN , GUSTAFSSON GORAN , THOMPSON MICHAEL O , WOMACK RICHARD
IPC分类号： G11C20060101 , G11C11/22

14. 发明专利

CA2488829A1 A METHOD FOR MAKING A FERROELECTRIC MEMORY CELL IN A FERROELECTRIC MEMORY DEVICE, AND A FERROELECTRIC MEMORY DEVICE 未知
公开(公告)号：CA2488829A1
公开(公告)日：2003-12-24
申请号：CA2488829
申请日：2003-06-16
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GOERAN , CARLSSON JOHAN , EDVARDSSON NICLAS , LJUNGCRANTZ HENRIK
IPC分类号： G11C5/00 , H01L21/3205 , H01L27/115 , G11C11/22 , C23C14/24 , H01L21/285
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisti ng of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one meta l layer and at least one metal oxide layer is formed on the ferroelectric laye r. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprise s at least a first and a second set of respectively parallel electrodes (510; 530), wherein the electrodes (510; 530) in a set are provided orthogonally t o the electrodes (530; 510) of a nearest following set and with memory cells formed in a ferroelectric layer (520) provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes (510; 530) which contact the ferroelectric layer (520) on each si de thereof.

15. 发明专利

NO20022910L 未知
公开(公告)号：NO20022910L
公开(公告)日：2003-12-19
申请号：NO20022910
申请日：2002-06-18
申请人： THIN FILM ELECTRONICS ASA
发明人： LJUNGCRANTZ HENRIK , EDVARDSSON NICLAS , CARLSSON JOHAN , GUSTAFSSON GOERAN
IPC分类号： G11C5/00 , H01L21/3205 , H01L27/115 , G11C11/22
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprises at least a first and a second set of respectively parallel electrodes, wherein the electrodes in a set are provided orthogonally to the electrodes of a nearest following set and with memory cells formed in a ferroelectric layer provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes which contact the ferroelectric layer on each side thereof.

16. 发明专利

CA2420378A1 NON-VOLATILE PASSIVE MATRIX AND METHOD FOR READOUT OF THE SAME 未知
公开(公告)号：CA2420378A1
公开(公告)日：2002-03-28
申请号：CA2420378
申请日：2001-08-24
申请人： THIN FILM ELECTRONICS ASA , IMMERSIVE TECHNOLOGIES LLC
发明人： GUSTAFSSON GORAN , CARLSSON JOHAN , WOMACK RICHARD , THOMPSON MICHAEL
IPC分类号： G11C7/06 , G11C7/10 , G11C11/22 , H01L21/8246 , H01L27/105 , G11C8/12 , G11C8/14
摘要： In a non-volatile passive matrix memory device (10) comprising an electrical ly polarizable dielectric memory material (12) exhibiting hysteresis between first and second sets (14; 15) of addressing electrodes constituting word lines (WL) and bit lines (BL) of the memory device. A memory cell (13) is defined in the memory material (12) at the overlap between a word line (WL) and a bit line (BL). The word lines (WL) are divided into segments (S) each segment sharing and being defined by adjoining bit lines (BL). Means (25) ar e provided for connecting each bit lines (BL) of a segment (S) with a sensing means (26) enabling simultaneous connections of all memory cells (13) of a word line segment (15) for readout via the bit lines (BL). Each sensing mean s (26) senses the charge flow in a bit line (BL) in order to determine a store d logicalvalue. In a readout method,a word line (WL) of a segment (S) is activated by setting its potential to a switching voltage Vs of the memory cell (13) during at least a portion of a read cycle, while keeping the bit lines (BL) of a segment (S) at zero potential, during which read cycle a logical value stored in the individual memory cells (13) is sensed by the sensing means (26).

17. 发明专利

NO20014136D0 未知
公开(公告)号：NO20014136D0
公开(公告)日：2001-08-24
申请号：NO20014136
申请日：2001-08-24
申请人： THIN FILM ELECTRONICS ASA
发明人： THOMPSON MICHAEL , WOMACK RICHARD , GUSTAFSSON GOERAN , CARLSSON JOHAN
IPC分类号： G11C20060101 , G11C11/22 , G11C

18. 发明专利

AT525706T 未知
公开(公告)号：AT525706T
公开(公告)日：2011-10-15
申请号：AT06747668
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA
发明人： BROEMS PER , KARLSSON CHRISTER , LEISTAD GEIRR , GUDESEN HANS GUDE , HAMBERG PER , BJOERKLID STAFFAN , CARLSSON JOHAN , GUSTAFSSON GOERAN
IPC分类号： G06K19/067 , G06K20060101 , G06K1/12 , G06K7/00 , G06K7/06 , G06K7/08 , G06K19/06 , G11B9/00 , G11C11/22
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

19. 发明专利

DE602004019561D1 未知
公开(公告)号：DE602004019561D1
公开(公告)日：2009-04-02
申请号：DE602004019561
申请日：2004-11-24
申请人： THIN FILM ELECTRONICS ASA
发明人： HAMBERG PER , KARLSSON CHRISTER , NORDAL PER-ERIK , OJAKANGAS NICKLAS , CARLSSON JOHAN , GUDESEN HANS GUDE
IPC分类号： G11C8/06 , G06F12/02 , G11C20060101 , G11C7/02 , G11C8/12 , G11C8/18 , G11C11/22
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

20. 发明专利

AT423379T 未知
公开(公告)号：AT423379T
公开(公告)日：2009-03-15
申请号：AT04808855
申请日：2004-11-24
申请人： THIN FILM ELECTRONICS ASA
发明人： HAMBERG PER , KARLSSON CHRISTER , NORDAL PER-ERIK , OJAKANGAS NICKLAS , CARLSSON JOHAN , GUDESEN HANS
IPC分类号： G11C8/06 , G06F12/02 , G11C20060101 , G11C7/02 , G11C8/12 , G11C8/18 , G11C11/22
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式