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11. 发明授权

US07095656B2 Method of erasing NAND flash memory device 失效
标题翻译：擦除NAND闪存器件的方法
公开(公告)号：US07095656B2
公开(公告)日：2006-08-22
申请号：US11007183
申请日：2004-12-09
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/16
摘要： Provided is concerned with a method of erasing a NAND flash memory device, capable of restraining an erasing disturbance fail arising from a deselected cell block and improving a product yield of the device by applying a negative voltage to a well of a high voltage transistor forming an X-decoder during an erasing operation in the NAND flash memory device.
摘要翻译：本发明涉及一种擦除NAND闪速存储器件的方法，该方法能够抑制由取消选择的单元块产生的擦除干扰故障，并通过向构成高压晶体管的高电压晶体管的阱施加负电压来提高器件的产品产量 NAND闪存器件中的擦除操作期间的X解码器。

12. 发明授权

US5838937A Data transmitting/receiving method using distributed path control in data switching system 失效
标题翻译：在数据交换系统中使用分布式路径控制的数据发送/接收方法
公开(公告)号：US5838937A
公开(公告)日：1998-11-17
申请号：US754091
申请日：1996-11-20
申请人： Hyeun Tae Lee , Keun Woo Lee
发明人： Hyeun Tae Lee , Keun Woo Lee
IPC分类号： H04L12/407 , H04L12/931 , H04L12/933 , H04L12/935 , H04Q11/04 , G06F13/00
CPC分类号： H04L49/30 , H04L49/101 , H04L49/3018 , H04L49/3027 , H04L49/351 , H04Q2213/1302 , H04Q2213/1304 , H04Q2213/13103 , H04Q2213/13107 , H04Q2213/13174 , H04Q2213/13204
摘要： A data transmitting/receiving method using distributed path control in a data switching system is disclosed, including the steps of: (1) storing data by distributing a first code and a last code of a received data frame, and then reading and storing a frame header; requesting a path setting and then initializing a trial number; transmitting a setup request signal in the next time slot with a destination port address if a polling address is its own address, and thus transmitting the stored header through a data channel when the response signal received from the destination output port indicates an end of the path controlling operation; and transmitting data stored in an input buffer to the end of a frame and requesting a path release at its polling address; (2) releasing the path in case of path release request when the destination port address is its own port address; if the output port is not in use, the output buffer is not is a full state, and a communication channel is available, indicating the end of the path controlling operation in a response bus in case of the path setup request and receiving a switch path setup data to discriminate an initial code and last code of the frame, thereby transmitting the data.
摘要翻译：公开了一种在数据交换系统中使用分布式路径控制的数据发送/接收方法，包括以下步骤：（1）通过分配接收到的数据帧的第一代码和最后一个代码来存储数据，然后读取和存储帧标题请求路径设置，然后初始化试用号码; 如果轮询地址是其自己的地址，则在具有目的地端口地址的下一个时隙中发送建立请求信号，并且当从目的地输出端口接收到的响应信号指示路径的结束时，通过数据信道发送存储的报头控制操作; 以及将存储在输入缓冲器中的数据发送到帧的结尾并请求在其轮询地址处的路径释放; （2）当目的地端口地址是其自己的端口地址时，释放路径释放请求时的路径; 如果输出端口未使用，则输出缓冲器不是完整状态，并且通信信道可用，指示在路径建立请求的情况下在响应总线中路径控制操作的结束并且接收到切换路径设置数据以区分帧的初始码和最后码，从而发送数据。

13. 发明授权

US07696577B2 Memory cell array in a semiconductor memory device with select lines formed in a U-like shape 失效
标题翻译：具有形成为U形形状的选择线的半导体存储器件中的存储单元阵列
公开(公告)号：US07696577B2
公开(公告)日：2010-04-13
申请号：US11771146
申请日：2007-06-29
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： H01L27/105
CPC分类号： H01L27/11524 , H01L27/115 , H01L27/11521
摘要： A memory cell array in a semiconductor device includes a semiconductor substrate having active areas and isolation areas in parallel, a plurality of select lines having generally a U like shape and is configured to cross over the active areas and the isolation areas, and a plurality of word lines formed between the select lines. In view of the select line being formed in U like shape, an occurrence of a punch through phenomenon is prevented by a junction area formed between the select lines. As a result, a margin for reducing a width of the select line is increased.
摘要翻译：半导体器件中的存储单元阵列包括具有活动区域和隔离区域的半导体衬底，多个选择线具有大致U形形状并且被配置为跨越有源区域和隔离区域，并且多个在选择行之间形成的字线。鉴于选择线形成为U形形状，通过形成在选择线之间的接合区域来防止穿孔现象的发生。结果，增加了用于减小选择线的宽度的余量。

14. 发明授权

US07668697B2 Method for analyzing dynamic detectable events at the single molecule level 有权
标题翻译：分析单分子水平动态可检测事件的方法
公开(公告)号：US07668697B2
公开(公告)日：2010-02-23
申请号：US11671956
申请日：2007-02-06
申请人： Andrei Volkov , Costa M. Colbert , Ivan Pan , Anelia Kraltcheva , Mitsu Reddy , Nasanshargal Battulga , Michael A. Rea , Keun Woo Lee , Susan H. Hardin , Brent Mulder , Chris Hebel , Alok Bandekar
发明人： Andrei Volkov , Costa M. Colbert , Ivan Pan , Anelia Kraltcheva , Mitsu Reddy , Nasanshargal Battulga , Michael A. Rea , Keun Woo Lee , Susan H. Hardin , Brent Mulder , Chris Hebel , Alok Bandekar
IPC分类号： G06F19/00 , G06F17/40 , G01N33/00
CPC分类号： C12Q1/6813 , G01N21/6408 , G01N21/6456 , G01N2021/6439
摘要： A method to be implemented on or in a computer is disclosed, where the method includes data collection, calibration, candidate selection, and analysis of data streams associated with each candidate to classify single molecule fluorescence resonance energy transfer events. Once classified, the classification can be related to the nature of the events, such as the identification of dNTP incorporation during primer extension to obtain a base read out of an unknown template.
摘要翻译：公开了一种在计算机上或计算机中实现的方法，其中该方法包括与每个候选物相关联的数据流的数据收集，校准，候选选择和分析，以分类单分子荧光共振能量传递事件。一旦分类，分类可以与事件的性质相关，例如在引物延伸期间鉴定dNTP并入以获得从未知模板读出的碱基。

15. 发明授权

US07391663B2 Structure and method for measuring the channel boosting voltage of NAND flash memory at a node between drain/source select transistor and adjacent flash memory cell 有权
标题翻译：用于测量漏极/源极选择晶体管与相邻闪存单元之间节点处NAND闪存的通道升压电压的结构和方法
公开(公告)号：US07391663B2
公开(公告)日：2008-06-24
申请号：US11307515
申请日：2006-02-10
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/50 , G11C16/04 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C29/02 , G11C29/1201 , G11C29/50004 , G11C2029/1204 , G11C2029/5004
摘要： Provided is a structure for testing a NAND flash memory including a string select transistor, a source select transistor, flash memory cells connected in series between the string select transistor and a source select transistor and a measurement pad coupled to a node between a flash memory cell and the string select transistor or the source select transistor.
摘要翻译：提供了一种用于测试NAND闪存的结构，包括串选择晶体管，源选择晶体管，串联连接在串选择晶体管和源选择晶体管之间的闪存单元和耦合到闪存单元之间的节点的测量垫和串选择晶体管或源选择晶体管。

16. 发明授权

US07067425B2 Method of manufacturing flash memory device 失效
标题翻译：制造闪存设备的方法
公开(公告)号：US07067425B2
公开(公告)日：2006-06-27
申请号：US10736720
申请日：2003-12-16
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： H01L21/302
CPC分类号： H01L27/11521 , H01L21/26586 , H01L21/76237 , H01L27/115
摘要： A method of manufacturing a flash memory device includes the steps of forming a nitride film on an entire surface of a trench by means of an annealing process to prevent implanted ions for adjusting a threshold voltage from diffusing to a device isolation region, and forming a side wall oxide film on a surface of the nitride film. The nitride film plays a role of preventing ions implanted into a substrate for adjusting a threshold voltage from flowing into the side wall oxidation film.
摘要翻译：一种制造闪存器件的方法包括以下步骤：通过退火工艺在沟槽的整个表面上形成氮化物膜，以防止注入的离子调节阈值电压扩散到器件隔离区域，并形成侧面氮化膜表面上的氧化膜膜。氮化物膜起到防止植入衬底中的离子来调节阈值电压以流入侧壁氧化膜的作用。

17. 发明授权

US10812425B2 Method and system for providing quiz together with advertisement in instant message service (IMS) chat room 有权
公开(公告)号：US10812425B2
公开(公告)日：2020-10-20
申请号：US16339985
申请日：2017-09-29
申请人： Chang Sub Jeon , Keun Woo Lee
发明人： Chang Sub Jeon , Keun Woo Lee , Yong Joo Shim
IPC分类号： G06F15/16 , H04L12/58 , A63F13/80 , G06Q30/02 , H04L12/18
摘要： A method, system, and quiz server for providing a quiz and an advertisement simultaneously in an IMS chat is provided. The method includes creating a chat room from a mobile terminal while inviting a pre-registered quizbot as a chat participant, displaying a quiz and an advertisement within the chat room on the mobile terminal in the form of a chat message composed by the quizbot, and displaying, within the chat room, an answer of a certain chat participant with respect to the quiz, and inputting a result of determination of whether the answer is correct into the chat room by using the quizbot, displaying, within the chat room, the answer of the certain chat participant with respect to the quiz, and inputting a result of determination of whether the answer is correct into the chat room by using the quizbot.

18. 发明授权

US07785827B2 Method and composition for leucyl-tRNA synthetases and derivatives thereof that activate and aminoacylate non-leucine amino acid to tRNA adaptor molecules 有权
标题翻译：亮氨酰tRNA合成酶及其衍生物的方法和组合物，其将非亮氨酸氨基酸活化并氨酰化至tRNA衔接子分子
公开(公告)号：US07785827B2
公开(公告)日：2010-08-31
申请号：US10251648
申请日：2002-09-20
申请人： Susan A. Martinis , James M. Briggs , Richard S. Mursinna , Keun Woo Lee , Tommie L. Lincecum , Amy M. Williams , Yuxin Zhai
发明人： Susan A. Martinis , James M. Briggs , Richard S. Mursinna , Keun Woo Lee , Tommie L. Lincecum , Amy M. Williams , Yuxin Zhai
IPC分类号： C07K14/47 , C07H21/04 , C12P21/06
CPC分类号： C12N9/93
摘要： A method and composition for tRNA synthetases that activate and aminoacylate nonstandard and noncognate amino acids to tRNA adaptor molecules is described that can be used to generate custom designed protein products for uses in medicinal, therapeutic, diagnostic, biotechnology, engineering, and spectroscopy applications. Some tRNA synthetases naturally misactivate and misaminoacylate noncognate amino acids. Many of these tRNA synthetases, including but not limited to leucyl-, isoleucyl-, and valyl-tRNA synthetases, have evolved proofreading and editing mechanisms to correct these mistakes. Inactivation of the enzyme's editing activity allows and facilitates production and accumulation of tRNAs that are misaminoacylated with nonstandard and noncognate amino acids. These misaminoacylated tRNAs can be used to introduce novel amino acids into proteins.
摘要翻译：描述了用于将非标准和非认可氨基酸激活和氨基化至tRNA衔接子分子的tRNA合成酶的方法和组合物，其可用于产生用于药物，治疗，诊断，生物技术，工程和光谱学应用的定制设计的蛋白质产物。一些tRNA合成酶天然失活和非氨基酸化非识别氨基酸。许多这些tRNA合成酶，包括但不限于亮氨酰，异亮氨酰和缬氨酰-tRNA合成酶，已经发展了校正和编辑机制，以纠正这些错误。酶的编辑活性的失活允许并促进用非标准和非认知氨基酸错氨基酰化的tRNA的产生和积累。这些错氨基酰化的tRNA可用于将新的氨基酸引入蛋白质。

19. 发明授权

US07358560B2 Flash memory device and method of manufacturing the same 失效
标题翻译：闪存装置及其制造方法
公开(公告)号：US07358560B2
公开(公告)日：2008-04-15
申请号：US11479444
申请日：2006-06-30
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11521
摘要： A non-volatile memory device includes a semiconductor substrate having an active region defined by isolation films that extend along a first direction. A control gate line extends along in a second direction perpendicular to the first direction. First and second floating gates are formed on the active region and below the control gate line. An island conductive line is formed between the first and second floating gates and within the isolation films. The island conductive line extends along the first direction and is configured to receive a voltage in order to prevent interference between the first and second floating gates.
摘要翻译：非易失性存储器件包括具有由沿着第一方向延伸的隔离膜限定的有源区的半导体衬底。控制栅极线沿垂直于第一方向的第二方向延伸。第一和第二浮栅形成在有源区和控制栅线下方。岛状导电线形成在第一和第二浮栅之间以及隔离膜内。岛状导电线沿着第一方向延伸并且被配置为接收电压，以便防止第一和第二浮动栅极之间的干扰。

20. 发明授权

US07358558B2 Flash memory device 有权
标题翻译：闪存设备
公开(公告)号：US07358558B2
公开(公告)日：2008-04-15
申请号：US11275273
申请日：2005-12-21
申请人： Keun Woo Lee
发明人： Keun Woo Lee
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/66825
摘要： A floating gate of a flash memory device is formed in a moat formed in an isolation film. Therefore, an electric field applied between a control gate and a channel region upon cycling can be precluded or mitigated. A distance between the control gate and the channel region is set greater than a predetermined value. Therefore, an electric field applied between the control gate and the channel region upon cycling can be mitigated. As a result, a data retention characteristic and an endurance characteristic can be improved.
摘要翻译：闪存器件的浮栅形成在隔离膜中形成的护城河。因此，可以排除或减轻在循环时在控制栅极和通道区域之间施加的电场。控制栅极和沟道区域之间的距离设定为大于预定值。因此，可以减轻在循环时在控制栅极和沟道区域之间施加的电场。结果，可以提高数据保持特性和耐久性。

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