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11. 发明授权

US07074461B2 Method for fabricating hydrogenated silicon oxycarbide thin film 失效
标题翻译：氢化硅碳化硅薄膜的制造方法
公开(公告)号：US07074461B2
公开(公告)日：2006-07-11
申请号：US10890586
申请日：2004-07-13
申请人： Young Suk Lee
发明人： Young Suk Lee
IPC分类号： H05H1/24
CPC分类号： C23C16/45563 , C23C16/30 , C23C16/45589 , C23C16/509
摘要： A hydrogenated SiOC thin film fabrication method includes supplying bis-trimethylsilylmethane and oxygen retaining gas to a wafer installed inside a reaction channel through one supply pipe, simultaneously or sequentially supplying hydrogen to the wafer through another supply pipe, applying RF power in the range of 100 W˜2000 W while supplying those gases and generating a plasma of those gases. During a post process such as oxygen ashing, carbon loss of SiOC film is minimized due to the supplied hydrogen.
摘要翻译：氢化SiOC薄膜制造方法包括通过一个供应管将双三甲基甲硅烷基甲烷和保氧气体供应到安装在反应通道内的晶片上，通过另一个供应管同时或顺序地向晶片供应氢，施加在100的范围内的RF功率 W〜2000W，同时供应这些气体并产生这些气体的等离子体。在诸如氧灰化的后处理中，由于所供应的氢，SiOC膜的碳损失被最小化。

12. 发明授权

US06514837B2 High density plasma chemical vapor deposition apparatus and gap filling method using the same 有权
标题翻译：高密度等离子体化学气相沉积装置和使用其的间隙填充方法
公开(公告)号：US06514837B2
公开(公告)日：2003-02-04
申请号：US09801518
申请日：2001-03-08
申请人： Young Suk Lee , Chul-Ju Hwang
发明人： Young Suk Lee , Chul-Ju Hwang
IPC分类号： H01L2136
CPC分类号： H01L21/02274 , C23C16/46 , C23C16/507 , H01L21/02129 , H01L21/02164 , H01L21/31625 , H01L21/76224
摘要： A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.
摘要翻译：高密度等离子体化学气相沉积装置包括：真空室，设有反应气体的入口和出口; 位于真空室内以将晶片安装在其上的可变元件，所述可动元件在其上表面具有晶片卡盘，以防止晶片水平移动; 围绕真空室的上外壁的线圈天线; 用于向线圈天线施加RF功率的RF发生器; 以及加热装置，用于加热安装在所述容器上的所述晶片。由于晶片111由传统的HDP-CVD装置中没有提出的晶片加热单元预先加热，所以抑制了先前溅射的绝缘材料的再沉积。因此，即使间隙具有高纵横比，也可以填补空隙。

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