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11. 发明授权

US07675779B2 Non-volatile memory devices and methods of operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07675779B2
公开(公告)日：2010-03-09
申请号：US12010490
申请日：2008-01-25
申请人： Won-joo Kim , Yoon-dong Park , Seung-hoon Lee , Suk-pil Kim , Jae-woong Hyun , Jung-hun Sung , Tae-hee Lee
发明人： Won-joo Kim , Yoon-dong Park , Seung-hoon Lee , Suk-pil Kim , Jae-woong Hyun , Jung-hun Sung , Tae-hee Lee
IPC分类号： G11C16/06
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/11519 , H01L27/11524 , H01L27/11565 , H01L27/11568
摘要： A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.
摘要翻译：非易失性存储器件包括设置在NAND串中的半导体衬底上的存储晶体管。串选择晶体管设置在NAND串的第一端，并且接地选择晶体管设置在NAN串的第二端。位线电连接到串选择晶体管外部的半导体衬底和接地选择晶体管的栅电极。

12. 发明申请

US20080259688A1 Non-volatile memory devices and methods of operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20080259688A1
公开(公告)日：2008-10-23
申请号：US12010490
申请日：2008-01-25
申请人： Won-joo Kim , Yoon-dong Park , Seung-hoon Lee , Suk-pil Kim , Jae-woong Hyun , Jung-hun Sung , Tae-hee Lee
发明人： Won-joo Kim , Yoon-dong Park , Seung-hoon Lee , Suk-pil Kim , Jae-woong Hyun , Jung-hun Sung , Tae-hee Lee
IPC分类号： G11C11/34
CPC分类号： H01L27/11521 , G11C16/0483 , H01L27/11519 , H01L27/11524 , H01L27/11565 , H01L27/11568
摘要： A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.
摘要翻译：非易失性存储器件包括设置在NAND串中的半导体衬底上的存储晶体管。串选择晶体管设置在NAND串的第一端，并且接地选择晶体管设置在NAN串的第二端。位线电连接到串选择晶体管外部的半导体衬底和接地选择晶体管的栅电极。

13. 发明申请

US20090251581A1 Sub-pixels, unit pixels, image sensors and methods of operating the same 有权
标题翻译：子像素，单位像素，图像传感器及其操作方法
公开(公告)号：US20090251581A1
公开(公告)日：2009-10-08
申请号：US12230363
申请日：2008-08-28
申请人： Dae-Kil Cha , Bok-ki Min , Young-gu Jin , Won-joo Kim , Seung-hoon Lee , Yoon-dong Park
发明人： Dae-Kil Cha , Bok-ki Min , Young-gu Jin , Won-joo Kim , Seung-hoon Lee , Yoon-dong Park
IPC分类号： H01L31/112 , H04N5/335
CPC分类号： H01L27/14679 , H01L27/14609 , H04N5/335 , H04N5/3355
摘要： An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.
摘要翻译：图像传感器包括排列成阵列的多个单位像素。每个单位像素包括被配置为被具有相同波长的光照射的多个子像素。每个子像素包括多个浮体晶体管。每个浮体晶体管包括源极区域，漏极区域，源极区域和漏极区域之间的浮体区域以及形成在浮动体区域上的栅极电极。

14. 发明授权

US08154640B2 Sub-pixels, unit pixels, image sensors and methods of operating the same 有权
标题翻译：子像素，单位像素，图像传感器及其操作方法
公开(公告)号：US08154640B2
公开(公告)日：2012-04-10
申请号：US12230363
申请日：2008-08-28
申请人： Dae-kil Cha , Bok-ki Min , Young-gu Jin , Won-joo Kim , Seung-hoon Lee , Yoon-dong Park
发明人： Dae-kil Cha , Bok-ki Min , Young-gu Jin , Won-joo Kim , Seung-hoon Lee , Yoon-dong Park
IPC分类号： H04N3/14 , H04N5/335 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14679 , H01L27/14609 , H04N5/335 , H04N5/3355
摘要： An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.
摘要翻译：图像传感器包括排列成阵列的多个单位像素。每个单位像素包括被配置为被具有相同波长的光照射的多个子像素。每个子像素包括多个浮体晶体管。每个浮体晶体管包括源极区域，漏极区域，源极区域和漏极区域之间的浮体区域以及形成在浮动体区域上的栅极电极。

15. 发明授权

US07626685B2 Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
标题翻译：距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器
公开(公告)号：US07626685B2
公开(公告)日：2009-12-01
申请号：US12222208
申请日：2008-08-05
申请人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , In-sung Joe
发明人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , In-sung Joe
IPC分类号： G01C3/08 , H01L31/062
CPC分类号： G01C3/08 , G01S7/4863 , G01S17/89
摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.
摘要翻译：距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。第一和第二垂直摄影门可以分别在第一和第二沟槽中。三维彩色图像传感器可以包括多个单位像素。每个单位像素可以包括多个彩色像素和距离测量传感器。

16. 发明申请

US20090273054A1 Non-volatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090273054A1
公开(公告)日：2009-11-05
申请号：US12382106
申请日：2009-03-09
申请人： Suk-pil Kim , Won-joo Kim , Seung-hoon Lee
发明人： Suk-pil Kim , Won-joo Kim , Seung-hoon Lee
IPC分类号： H01L29/68
CPC分类号： H01L27/115 , H01L27/11206 , H01L27/24
摘要： A non-volatile memory device and methods of fabricating the device according to example embodiments involve a stacked layer structure. The non-volatile memory device may include at least one first horizontal electrode including a first sidewall and a second sidewall; at least one second horizontal electrode including a third sidewall and a fourth sidewall; wherein the third sidewall may be disposed to face the first sidewall; at least one vertical electrode may be interposed between the first sidewall and the third sidewall, in such a way as to cross or intersect each of the at least one first and second horizontal electrodes, and; at least one data storage layer that may be capable of locally storing a change of electrical resistance may be interposed where the at least one first horizontal electrode and the at least one vertical electrode cross or intersect and where the at least one horizontal electrode and the at least one vertical electrodes cross or intersect.
摘要翻译：根据示例实施例的非易失性存储器件和制造器件的方法涉及堆叠层结构。非易失性存储器件可以包括至少一个包括第一侧壁和第二侧壁的第一水平电极; 至少一个第二水平电极，包括第三侧壁和第四侧壁; 其中所述第三侧壁可以被设置为面对所述第一侧壁; 至少一个垂直电极可以插入在第一侧壁和第三侧壁之间，以便使得至少一个第一和第二水平电极中的每一个交叉或相交，可以插入至少一个能够局部存储电阻变化的数据存储层，其中至少一个第一水平电极和至少一个垂直电极交叉或相交，并且其中至少一个水平电极和at 至少一个垂直电极交叉或相交。

17. 发明授权

US08035806B2 Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
标题翻译：距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器
公开(公告)号：US08035806B2
公开(公告)日：2011-10-11
申请号：US12379021
申请日：2009-02-11
申请人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
发明人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01B11/22 , H01L27/14609 , H01L27/14641
摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
摘要翻译：提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

18. 发明申请

US20100033611A1 Pixel array of three-dimensional image sensor 审中-公开
标题翻译：像素阵列的三维图像传感器
公开(公告)号：US20100033611A1
公开(公告)日：2010-02-11
申请号：US12461063
申请日：2009-07-30
申请人： Seung-hoon Lee , Yoon-dong Park , Young-gu Jin , Seung-hyuk Chang , Dae-kil Cha
发明人： Seung-hoon Lee , Yoon-dong Park , Young-gu Jin , Seung-hyuk Chang , Dae-kil Cha
IPC分类号： H04N13/02
CPC分类号： H01L27/14645 , H01L27/14641 , H04N5/332 , H04N5/3696 , H04N5/37457 , H04N13/229 , H04N13/257
摘要： Provided is a pixel array of a three-dimensional image sensor. The pixel array includes unit pixel patterns each including a color pixel and a distance-measuring pixel arranged in an array form. The unit pixel patterns are arranged in such a way that a group of distance-measuring pixels are disposed adjacent to each other.
摘要翻译：提供了三维图像传感器的像素阵列。像素阵列包括各自包括以阵列形式布置的彩色像素和距离测量像素的单位像素图案。单位像素图案被布置成使得一组距离测量像素彼此相邻地布置。

19. 发明授权

US08294880B2 Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
公开(公告)号：US08294880B2
公开(公告)日：2012-10-23
申请号：US13137907
申请日：2011-09-21
申请人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
发明人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01B11/22 , H01L27/14609 , H01L27/14641
摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

20. 发明申请

US20120012899A1 Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
标题翻译：距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器
公开(公告)号：US20120012899A1
公开(公告)日：2012-01-19
申请号：US13137907
申请日：2011-09-21
申请人： Young-gu Jin , Dae-Kil Cha , Seung-hoon Lee , Yoon-dong Park
发明人： Young-gu Jin , Dae-Kil Cha , Seung-hoon Lee , Yoon-dong Park
IPC分类号： H01L27/148
CPC分类号： G01C3/08 , G01B11/22 , H01L27/14609 , H01L27/14641
摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
摘要翻译：提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

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