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    • 14. 发明申请
    • Gate structure of semiconductor device and method for forming the same
    • 半导体器件的栅极结构及其形成方法
    • US20060151839A1
    • 2006-07-13
    • US11268846
    • 2005-11-08
    • Young KimJun ChangMin LeeYong Eun
    • Young KimJun ChangMin LeeYong Eun
    • H01L29/78H01L21/4763
    • H01L27/10876H01L21/2815H01L29/66636
    • Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.
    • 本文公开了一种用于形成半导体器件的栅极结构的方法。 该方法包括形成多个栅极,其包括依次层叠在具有场氧化膜的硅基板上的第一栅极电介质膜,第一栅极导电膜和栅极硅化物膜,在第一栅极的一侧形成热氧化膜 将暴露在所述多个栅极之间的硅衬底蚀刻到预定深度以形成多个沟槽,在所述沟槽的内壁上形成第二栅极氧化膜,并且形成间隔物形状的第二栅极导电膜 第二栅极氧化膜的预定区域,以及第一栅极导电膜,栅极硅化物膜和热氧化物膜的一侧。