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11. 发明授权

US5188924A Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt 失效
标题翻译：图案形成方法利用具有光致抗蚀剂膜底层和含有光敏重氮盐的对比度增强覆盖层的材料
公开(公告)号：US5188924A
公开(公告)日：1993-02-23
申请号：US777449
申请日：1991-10-16
申请人： Kunihiro Ikari, deceased , Hirokazu Niki , Makoto Nakase , Toshiaki Shinozaki
发明人： Kunihiro Ikari, deceased , Hirokazu Niki , Makoto Nakase , Toshiaki Shinozaki
IPC分类号： G03F7/095
CPC分类号： G03F7/095
摘要： A pattern forming method, comprising the steps of providing a resist film on a substrate; providing a photosensitive film containing a photosensitive diazonium salt on the resist film; and then subjecting the resultant composite to pattern exposure by use of a light to which both of the resist film and the photosensitive diazonium salt are sensitive, can employ a composition for pattern formation which comprises a photosensitive diazonium salt, a resin binder and a solvent. By this method, a minute pattern of 1 .mu.m or less can be formed, utilizing effectively the UV-ray exposure technique of the prior art, with good dimensional precision and stability.
摘要翻译：一种图案形成方法，包括以下步骤：在基底上提供抗蚀剂膜; 在抗蚀剂膜上提供含有光敏重氮盐的感光膜; 然后使用所述抗蚀剂膜和感光重氮盐两者都敏感的光来对所得复合材料进行图案曝光，可以使用包含光敏重氮盐，树脂粘合剂和溶剂的图案形成用组合物。通过该方法，可以有效利用现有技术的紫外线照射技术形成1μm以下的微小图案，具有良好的尺寸精度和稳定性。

12. 发明授权

US5051338A Method and apparatus for forming resist pattern 失效
标题翻译：用于形成抗蚀剂图案的方法和装置
公开(公告)号：US5051338A
公开(公告)日：1991-09-24
申请号：US441479
申请日：1989-11-27
申请人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
发明人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
IPC分类号： H01L21/30 , G03F7/16
CPC分类号： G03F7/168 , Y10S430/168
摘要： A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

13. 发明授权

US4269653A Aperture stop 失效
标题翻译：孔径停止
公开(公告)号：US4269653A
公开(公告)日：1981-05-26
申请号：US91037
申请日：1979-11-05
申请人： Hirotsugu Wada , Toshiaki Shinozaki
发明人： Hirotsugu Wada , Toshiaki Shinozaki
IPC分类号： C23F1/04 , C25D1/08 , G02B5/00 , H01J37/09 , H01L21/027 , B23P15/16
CPC分类号： G03F1/20 , C23F1/04 , C25D1/08 , G02B5/005 , H01J37/09
摘要： A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.
摘要翻译：一种制造具有用于电子束曝光装置的矩形孔径的孔径光阑的方法，包括以下步骤：制备具有（100）面的一侧的单晶硅衬底; 在所述基板的所述侧面上设置掩模; 通过所述侧面通过所述掩模选择性地蚀刻所述衬底，以通过各向异性蚀刻形成矩形横截面的突出部分; 通过用具有良好导电性的高熔点金属覆盖所述蚀刻的基板的所述一侧来形成开口层，从而包围所述突出部分; 以及通过从所述孔层移除所述基底，在所述孔层中形成具有对应于所述突出部分的横截面的横截面的矩形孔。

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