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11. 发明授权

US07589000B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07589000B2
公开(公告)日：2009-09-15
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

12. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

13. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

14. 发明申请

US20120315445A1 Group-III Nitride Crystal Composite 有权
标题翻译： III族氮化物晶体复合材料
公开(公告)号：US20120315445A1
公开(公告)日：2012-12-13
申请号：US13564731
申请日：2012-08-02
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： B32B5/00
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.
摘要翻译： III族氮化物晶体复合材料由通常为{0001}主表面并且彼此侧向彼此相邻并且在本体晶片上外延的III族氮化物晶体的III族氮化物块状晶体切割的特别加工的晶片形成。切片被布置成使得它们的主表面彼此平行但不一定彼此齐平，并且使得切片中的[0001]方向以相同的方式取向。

15. 发明申请

US20100155902A1 Manufacturing Method of Nitride Substrate, Nitride Substrate, and Nitride-Based Semiconductor Device 失效
标题翻译：氮化物基板，氮化物基板和氮化物基半导体装置的制造方法
公开(公告)号：US20100155902A1
公开(公告)日：2010-06-24
申请号：US12711507
申请日：2010-02-24
申请人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
发明人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
IPC分类号： H01L29/20 , H01L29/32
CPC分类号： H01L31/18 , C30B25/02 , C30B29/403 , H01L29/045
摘要： A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005p) kPa≦PHCl≦(4+0.0005p) kPa and partial pressure PNH3 satisfies (15−0.0009p) kPa≦PNH3≦(26−0.0017p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x
摘要翻译：氮化物衬底的制造方法包括以下步骤：制备接地衬底; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005p）kPa＆nlE; PHCl＆nlE;（4 + 0.0005p）kPa，分压PNH3满足（15-0.0009p）kPa＆nlE; PNH3＆nlE;（26-0.0017p）kPa，由此得到AlxGayIn1-x-yN晶体（0＆ x <1,0

16. 发明申请

US20080296585A1 GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US20080296585A1
公开(公告)日：2008-12-04
申请号：US12130082
申请日：2008-05-30
申请人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L29/207 , H01L21/205
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN籽晶衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

17. 发明授权

US08258051B2 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal 有权
标题翻译：制造III族氮化物晶体的方法以及利用晶体的半导体器件
公开(公告)号：US08258051B2
公开(公告)日：2012-09-04
申请号：US12467297
申请日：2009-05-17
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： H01L21/20 , C30B19/12 , C30B25/18
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).
摘要翻译：本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q）将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤，（10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

18. 发明授权

US07723142B2 Growth method of GaN crystal, and GaN crystal substrate 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US07723142B2
公开(公告)日：2010-05-25
申请号：US12130082
申请日：2008-05-30
申请人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L21/00 , H01L31/20
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN晶种衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

19. 发明申请

US20080006201A1 Method of growing gallium nitride crystal 审中-公开
标题翻译：生长氮化镓晶体的方法
公开(公告)号：US20080006201A1
公开(公告)日：2008-01-10
申请号：US11826798
申请日：2007-07-18
申请人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B25/04
CPC分类号： C30B25/183 , C30B23/025
摘要： The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts, suppressing GaN from growing on masks, inducing facets starting from edges of the masks and rising to tops of GaN crystals on exposed parts, maintaining the facets, making defect accumulating regions H on masked parts. attracting dislocations into the defect accumulating regions H on masks and reducing dislocation density of the surrounding GaN crystals on exposed parts. The defect accumulating regions H on masks have four types. The best of the defect accumulating regions H is an inversion region J. Occurrence of the inversion regions J requires preceding appearance of beaks with inversion orientation on the facets. Sufficient inversion regions J are produced at an initial stage by maintaining the temperature Tj at 900° C. to 990° C. without fail. Allowable inversion regions J beaks are produced at an initial stage by the sets of temperatures T(K) and growing speeds Vj (μm/h) satisfying −4.39×105/T+3.87×102
摘要翻译：小面生长方法通过制备下衬底，在下衬底上形成点阵掩模或剥离掩模来生长GaN晶体，在气相中生长GaN，在曝光部分上生长GaN，抑制GaN在掩模上生长，从掩模的边缘开始引起刻面并在暴露部分上升到GaN晶体的顶部，保持刻面，使掩模部件上的缺陷积聚区域H。在掩模上吸引缺陷积聚区H的位错，并降低暴露部分周围GaN晶体的位错密度。掩模上的缺陷积聚区域H具有四种类型。缺陷累积区域H中的最好的是反转区域J.反转区域J的出现需要在面上具有反转取向的喙前面的出现。通过将温度Tj保持在900℃至990℃而在初始阶段产生足够的反转区域J. 在初始阶段通过温度T（K）和生长速度Vj（mum / h）的集合产生允许的反转区域J喙，满足-4.39×10 5 / T +3.87×10 2

20. 发明授权

US07303630B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07303630B2
公开(公告)日：2007-12-04
申请号：US10933291
申请日：2004-09-03
申请人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
IPC分类号： C30B21/08
CPC分类号： C30B29/40 , C30B25/18
摘要： Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
摘要翻译：点状种子以规则图案植入下衬底。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。方面组装相邻区域的位错，将位错累积到坑底，并在种子上形成闭合缺陷积聚区（H）。多晶或倾斜取向单晶闭合缺陷积聚区（H）由于热膨胀各向异性而引起微裂纹。最好的是定向反转单晶闭合缺陷积聚区（H）。在早期阶段，在高面上诱导取向反突起，并在种子之上彼此统一。在均匀突起上生长的取向反相晶体成为取向反单晶闭合缺陷积聚区（H）。

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