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11. 发明授权

US08281192B2 Storage medium reproducing apparatus, storage medium reproducing method, and computer program product for reading information from storage medium 有权
标题翻译：存储介质再现装置，存储介质再现方法和用于从存储介质读取信息的计算机程序产品
公开(公告)号：US08281192B2
公开(公告)日：2012-10-02
申请号：US12354934
申请日：2009-01-16
申请人： Shinichi Kanno
发明人： Shinichi Kanno
IPC分类号： G11C29/00
CPC分类号： G11B20/1833 , G11B20/18 , G11B27/36
摘要： A storage medium reproducing apparatus includes a storage unit, a correction history storage unit, a correction history implementing unit, and a correcting unit. The storage unit includes a plurality of information storage units storing information depending on whether a charge quantity is greater than a predetermined charge quantity threshold value, and a correction code storage unit storing error correction codes for the information stored in the information storage units. The correction history storage unit stores a correction history containing identification information for the information storage unit corrected with an error correction code is performed, and a content of the correction. The correction history implementing unit corrects information in compliance with the content of the correction when the information is read from the information storage unit. The correcting unit performs a correcting operation using an error correction code on the corrected information, and registers the correction history of the corrected information storage unit.
摘要翻译：存储介质再现装置包括存储单元，校正历史存储单元，校正历史实现单元和校正单元。存储单元包括多个信息存储单元，其存储取决于计费量是否大于预定电荷量阈值的信息;以及校正码存储单元，存储存储在信息存储单元中的信息的纠错码。校正历史存储单元存储包含用纠错码校正的信息存储单元的识别信息的校正历史，以及校正的内容。当从信息存储单元读取信息时，校正历史实现单元根据校正的内容校正信息。校正单元使用校正信息上的纠错码执行校正操作，并且登记校正信息存储单元的校正历史。

12. 发明授权

US08156393B2 Memory system 有权
标题翻译：内存系统
公开(公告)号：US08156393B2
公开(公告)日：2012-04-10
申请号：US12513860
申请日：2007-11-28
申请人： Yasushi Nagadomi , Daisaburo Takashima , Kosuke Hatsuda , Shinichi Kanno
发明人： Yasushi Nagadomi , Daisaburo Takashima , Kosuke Hatsuda , Shinichi Kanno
IPC分类号： G11C29/00
CPC分类号： G11C16/349 , G06F11/008 , G06F11/1068
摘要： To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used.The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.
摘要翻译：提供一种确定诸如耗尽水平的存储器状态并且允许有效地使用存储器的存储器系统。存储器系统包括NAND型闪速存储器1，数据可以被电写入/擦除;非易失性存储器2，对NAND型闪速存储器1的擦除操作次数进行计数，并保持擦除次数和最大数量擦除操作，以及控制器3，其具有从计算机4被给予自诊断命令的连接接口31，并且基于自身检测从非易失性存储器2检索擦除操作的次数和擦除操作的最大次数，诊断命令，并通过连接接口31输出擦除操作次数和最大擦除次数。

13. 发明申请

US20120072811A1 CONTROLLER, STORAGE APPARATUS, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：控制器，存储设备和计算机程序产品
公开(公告)号：US20120072811A1
公开(公告)日：2012-03-22
申请号：US13035194
申请日：2011-02-25
申请人： Kazuhiro FUKUTOMI , Hiroshi Yao , Shinichi Kanno , Shigehiro Asano , Toshikatsu Hida , Yasuhiro Kimura
发明人： Kazuhiro FUKUTOMI , Hiroshi Yao , Shinichi Kanno , Shigehiro Asano , Toshikatsu Hida , Yasuhiro Kimura
IPC分类号： H03M13/09 , G06F11/10
CPC分类号： G06F11/108 , G06F2211/1059 , G06F2211/1073 , G06F2211/1092
摘要： According to one embodiment, a controller controls writing into and reading from a storage apparatus that includes a first data-storage unit and a second data-storage unit. The second data-storage unit stores user data and parity data of the user data. The first data-storage unit stores the parity data. The controller includes a parity updating unit and a parity writing unit. When parity data is updated, the parity updating unit writes the updated parity data into the first data-storage unit. When a certain requirement is satisfied, the parity writing unit reads the parity data written in the first data-storage unit, and writes the parity data thus read into the second data-storage unit.
摘要翻译：根据一个实施例，控制器控制对包括第一数据存储单元和第二数据存储单元的存储装置的写入和读取。第二数据存储单元存储用户数据和用户数据的奇偶校验数据。第一数据存储单元存储奇偶校验数据。控制器包括奇偶校验更新单元和奇偶校验写入单元。当更新奇偶校验数据时，奇偶校验更新单元将更新的奇偶校验数据写入第一数据存储单元。当满足特定要求时，奇偶写入单元读取写入第一数据存储单元中的奇偶校验数据，并将读出的奇偶校验数据写入第二数据存储单元。

14. 发明申请

US20120030528A1 SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：半导体存储设备
公开(公告)号：US20120030528A1
公开(公告)日：2012-02-02
申请号：US13270788
申请日：2011-10-11
申请人： Toshikatsu HIDA , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人： Toshikatsu HIDA , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
IPC分类号： G06F12/16 , G06F11/36
CPC分类号： G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要： As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译：作为可以有效地执行刷新操作的半导体存储装置，提供了一种半导体存储装置，其包括以块为单位存储数据的非易失性半导体存储器，该块是数据擦除单元，以及监视数据的错误计数的控制单元存储在从所述块中选择的监视块和所述监视块中的刷新数据中，其中所述错误计数等于或大于阈值。

15. 发明授权

US07984325B2 Storage control device, data recovery device, and storage system 有权
标题翻译：存储控制装置，数据恢复装置和存储系统
公开(公告)号：US07984325B2
公开(公告)日：2011-07-19
申请号：US12398608
申请日：2009-03-05
申请人： Kazuhiro Fukutomi , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
发明人： Kazuhiro Fukutomi , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
IPC分类号： G06F11/00
CPC分类号： G06F11/108 , G06F11/1068
摘要： When data in one semiconductor memory device is corrupted during a padding process by a padding unit and the data cannot be recovered even by using an error correcting code for correcting a data error, a storage control device issues a data recovery request to a data recovery device. The data recovery device reads the data from other semiconductor memory device in response to the data recovery request to recover the data, and returns a recovery result to the padding unit in the storage control device to perform the padding process.
摘要翻译：当一个半导体存储器件中的数据在填补单元的填充处理期间被破坏时，即使通过使用用于校正数据错误的纠错码也不能恢复数据，存储控制装置向数据恢复装置发出数据恢复请求。数据恢复装置响应于数据恢复请求从其他半导体存储装置读取数据以恢复数据，并将恢复结果返回到存储控制装置中的填充单元以执行填充处理。

16. 发明授权

US07958411B2 Memory system and control method thereof 有权
标题翻译：存储系统及其控制方法
公开(公告)号：US07958411B2
公开(公告)日：2011-06-07
申请号：US12551213
申请日：2009-08-31
申请人： Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
发明人： Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
IPC分类号： G11C29/00 , G06F13/00 , G06F13/28
CPC分类号： G11C16/349 , G06F11/1068 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C29/76
摘要： A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.
摘要翻译：一种存储器系统，包括：包括作为数据擦除单元的块的非易失性存储器，测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器，其将指示空闲状态之一的状态值和具有每个块的擦除时间的使用状态，检测在短时间内共同发生重写的块的检测器，选择具有旧擦除时间的空闲块作为第一块的第一选择器，选择如果第一块被包括在由检测器检测到的块中，则将具有旧擦除时间的块用作第二块，以及调平单元，其将第二块中的数据移动到第一块。

17. 发明申请

US20100313084A1 SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：半导体存储设备
公开(公告)号：US20100313084A1
公开(公告)日：2010-12-09
申请号：US12529282
申请日：2008-09-22
申请人： Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人： Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
IPC分类号： G06F11/07 , G06F11/00
CPC分类号： G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要： As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译：作为可以有效地执行刷新操作的半导体存储装置，提供了一种半导体存储装置，其包括以块为单位存储数据的非易失性半导体存储器，该块是数据擦除单元，以及监视数据的错误计数的控制单元存储在从所述块中选择的监视块和所述监视块中的刷新数据中，其中所述错误计数等于或大于阈值。

18. 发明申请

US20100223531A1 SEMICONDUCTOR STORAGE 失效
标题翻译：半导体存储
公开(公告)号：US20100223531A1
公开(公告)日：2010-09-02
申请号：US12713631
申请日：2010-02-26
申请人： Kazuhiro FUKUTOMI , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
发明人： Kazuhiro FUKUTOMI , Hideaki Sato , Shinichi Kanno , Shigehiro Asano
IPC分类号： H03M13/05 , G06F12/16 , G06F11/10
CPC分类号： G06F11/108 , G06F11/1052
摘要： A semiconductor storage includes a receiver configured to receive a write request from a host device; a storage unit configured to hold redundancy data generation/non-generation information; a writing unit configured to write data in a semiconductor memory array and write redundancy data generation/non-generation information of the written data in the storage unit; a first data extracting unit configured to extract data whose redundancy data is not generated from among the data held by the semiconductor memory array; a first redundancy data generating unit configured to generate redundancy data; a first redundancy data writing unit configured to write the generated redundancy data in the semiconductor memory array; and a first redundancy data generation/non-generation information updating unit configured to update the redundancy data generation/non-generation information of the data whose redundancy data held by the storage unit is generated.
摘要翻译：半导体存储器包括被配置为从主机设备接收写请求的接收器; 存储单元，被配置为保存冗余数据生成/非生成信息; 写入单元，被配置为在半导体存储器阵列中写入数据，并将写入的数据的冗余数据生成/非生成信息写入存储单元中; 第一数据提取单元，被配置为从半导体存储器阵列保存的数据中提取不产生冗余数据的数据; 第一冗余数据生成单元，被配置为生成冗余数据; 第一冗余数据写入单元，被配置为将所生成的冗余数据写入所述半导体存储器阵列中; 以及第一冗余数据生成/非生成信息更新单元，被配置为更新由所述存储单元保持的冗余数据生成的数据的冗余数据生成/非生成信息。

19. 发明申请

US20100223424A1 MEMORY SYSTEM AND CONTROL METHOD THEREOF 有权
标题翻译：存储系统及其控制方法
公开(公告)号：US20100223424A1
公开(公告)日：2010-09-02
申请号：US12778484
申请日：2010-05-12
申请人： KAZUYA KITSUNAI , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
发明人： KAZUYA KITSUNAI , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/0604 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0647 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
摘要： A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
摘要翻译：存储器系统包括包括作为数据擦除单元的多个块的非易失性存储器，测量擦除每个块的数据的擦除时间的测量单元，以及写入从至少外部提供的数据到第一块设置为空闲状态，擦除时间最长。

20. 发明申请

US20100037012A1 Semiconductor Storage Device, Method of Controlling the Same, Controller and Information Processing Apparatus 失效
标题翻译：半导体存储装置及其控制方法，控制器及信息处理装置
公开(公告)号：US20100037012A1
公开(公告)日：2010-02-11
申请号：US12552461
申请日：2009-09-02
申请人： Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
发明人： Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
IPC分类号： G06F12/02
CPC分类号： G06F3/0604 , G06F3/0616 , G06F3/0631 , G06F3/064 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F12/0804 , G06F12/0866 , G06F2212/7201 , G06F2212/7202 , G06F2212/7203 , G06F2212/7209 , G11C11/5628
摘要： A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second, third and fourth memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data by a first management unit in the fourth memory area, a third processing for storing data by a second management unit in the third memory area, a fourth processing for moving an area of the third unit from the fourth memory area to the second memory area, a fifth processing for copying data to an area of the third unit and allocating the area to the second memory area, and a sixth processing for copying data to an empty area of the third unit in the second memory area.
摘要翻译：半导体存储装置包括配置在非易失性半导体存储器中的易失性半导体存储器，第二，第三和第四存储区域中的第一存储区域和执行以下处理的控制器。控制器执行第一处理，用于将第一单元存储在第一存储区域中的多个数据，第二处理，用于由第一管理单元存储在第四存储区域中的数据;第三处理，用于由第二管理单元存储数据在第三存储区域中，用于将第三单元的区域从第四存储区域移动到第二存储区域的第四处理，用于将数据复制到第三单元的区域并将区域分配给第二存储区域的第五处理以及用于将数据复制到第二存储区域中的第三单元的空白区域的第六处理。

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