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11. 发明授权

US08004874B2 Multi-terminal resistance device 有权
标题翻译：多端电阻设备
公开(公告)号：US08004874B2
公开(公告)日：2011-08-23
申请号：US12412644
申请日：2009-03-27
申请人： Haiwen Xi , Kaizhong Gao , Song Xue
发明人： Haiwen Xi , Kaizhong Gao , Song Xue
IPC分类号： G11C11/00 , G11C43/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/76 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/146 , H01L45/147
摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
摘要翻译：本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。该设备可以包括共享的第四电极以提供额外的编程能力。在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

12. 发明授权

US08400825B2 Magnetic field assisted stram cells 失效
标题翻译：磁场辅助电极
公开(公告)号：US08400825B2
公开(公告)日：2013-03-19
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

13. 发明申请

US20120250405A1 MAGNETIC FIELD ASSISTED STRAM CELLS 失效
标题翻译：磁场辅助细胞
公开(公告)号：US20120250405A1
公开(公告)日：2012-10-04
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/16 , G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

14. 发明申请

US20100034008A1 MAGNETIC FIELD ASSISTED STRAM CELLS 有权
标题翻译：磁场辅助STRAM细胞
公开(公告)号：US20100034008A1
公开(公告)日：2010-02-11
申请号：US12199126
申请日：2008-08-27
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/22
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

15. 发明授权

US08223532B2 Magnetic field assisted STRAM cells 有权
标题翻译：磁场辅助STRAM细胞
公开(公告)号：US08223532B2
公开(公告)日：2012-07-17
申请号：US12199126
申请日：2008-08-27
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

16. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

17. 发明授权

US08287944B2 Magnetic memory cell construction 有权
标题翻译：磁记忆体构造
公开(公告)号：US08287944B2
公开(公告)日：2012-10-16
申请号：US13073195
申请日：2011-03-28
申请人： Kaizhong Gao , Haiwen Xi
发明人： Kaizhong Gao , Haiwen Xi
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
摘要翻译：具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向超出叠层膜的面外磁性存储单元平面，例如垂直于堆叠平面。

18. 发明授权

US08243503B2 Magnetic storage element responsive to spin polarized current 有权
标题翻译：响应于自旋极化电流的磁存储元件
公开(公告)号：US08243503B2
公开(公告)日：2012-08-14
申请号：US12958106
申请日：2010-12-01
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Song S. Xue , Sining Mao
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.
摘要翻译：本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层，当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

19. 发明申请

US20110121418A1 MRAM Cells Including Coupled Free Ferromagnetic Layers for Stabilization 有权
标题翻译：包括用于稳定的耦合的自由铁磁层的MRAM电池
公开(公告)号：US20110121418A1
公开(公告)日：2011-05-26
申请号：US13015320
申请日：2011-01-27
申请人： Haiwen Xi , Kaizhong Gao , Dimitar V. Dimitrov , Song S. Xue
发明人： Haiwen Xi , Kaizhong Gao , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1675 , Y10T428/1114 , Y10T428/1121
摘要： A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.
摘要翻译： MRAM单元的自由铁磁数据存储层耦合到自由铁磁稳定层，该稳定层在一侧直接电耦合到接触电极，并在相对侧与自由铁磁数据存储层分离，通过间隔层。间隔层提供两个自由层之间的耦合，该耦合是以下之一：铁磁耦合和反铁磁耦合。

20. 发明授权

US07935435B2 Magnetic memory cell construction 有权
标题翻译：磁记忆体构造
公开(公告)号：US07935435B2
公开(公告)日：2011-05-03
申请号：US12233764
申请日：2008-09-19
申请人： Kaizhong Gao , Haiwen Xi
发明人： Kaizhong Gao , Haiwen Xi
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
摘要翻译：具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元平面，例如垂直于堆叠平面。

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