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11. 发明授权

US06218249B1 MOS transistor having shallow source/drain junctions and low leakage current 失效
标题翻译： MOS晶体管具有较浅的源/漏结和低漏电流
公开(公告)号：US06218249B1
公开(公告)日：2001-04-17
申请号：US09455588
申请日：1999-12-06
申请人： Jer-Shen Maa , Sheng Teng Hsu , Chien-Hsiung Peng
发明人： Jer-Shen Maa , Sheng Teng Hsu , Chien-Hsiung Peng
IPC分类号： H01L21336
CPC分类号： H01L21/28518 , H01L21/28052 , H01L29/665 , H01L29/6659
摘要： A process of forming silicide at uniform rates across the entire source/drain region is provided. A two-step annealing method permits the thickness of the silicide formed on the edge of a silicon electrode to be substantially the same as it is in the center of the electrode. A first, low temperature anneal begins the salicidation process across the source/drain electrode surface. The time and temperature are controlled so that the metal is only partially consumed. The annealing is interrupted to remove excess silicidation metal, especially the unreacted metal overlying oxide areas neighboring the silicon electrode. Then, the silicidation is completed at a higher temperature anneal. Because the excess metal has been removed, the resulting silicide layer is uniformly flat, permitting the transistor to be fabricated with shallow junction areas and low leakage currents. In one embodiment of the invention, the crystalline structure of source and drain surfaces is annihilated before the deposition of metal, to lower annealing temperatures and add precise control to the silicidation process. A transistor having a uniformly thick silicide layer, fabricated in accordance with the above-mentioned method, is also provided.
摘要翻译：提供了在整个源极/漏极区域以均匀的速率形成硅化物的工艺。两步退火方法允许形成在硅电极边缘上的硅化物的厚度与电极中心基本相同。首先，低温退火开始跨越源/漏电极表面的盐析过程。控制时间和温度，使得金属仅被部分消耗。中断退火以去除过量的硅化金属，特别是覆盖与硅电极相邻的氧化物区域的未反应的金属。然后，在较高温度的退火下完成硅化。由于去除了多余的金属，所得到的硅化物层是均匀平坦的，从而允许晶体管被制造成具有浅结的区域和低的漏电流。在本发明的一个实施例中，源极和漏极表面的晶体结构在金属沉积之前被消除，以降低退火温度并且增加对硅化工艺的精确控制。还提供了具有根据上述方法制造的均匀厚的硅化物层的晶体管。

12. 发明授权

US6043164A Method for transferring a multi-level photoresist pattern 失效
标题翻译：转印多层光刻胶图案的方法
公开(公告)号：US6043164A
公开(公告)日：2000-03-28
申请号：US665014
申请日：1996-06-10
申请人： Tue Nguyen , Sheng Teng Hsu , Jer-shen Maa , Bruce Dale Ulrich , Chien-Hsiung Peng
发明人： Tue Nguyen , Sheng Teng Hsu , Jer-shen Maa , Bruce Dale Ulrich , Chien-Hsiung Peng
IPC分类号： G03F7/36 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76807 , H01L21/76813 , H01L21/0274 , H01L21/0334 , H01L2221/1021
摘要： A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The photoresist profile is partially etched away in the area of the intermediate thickness to reveal a second dielectric surface area. The second dielectric surface area is then etched to a second depth less than the first depth. In this manner, vias can be formed to the first depth, and lines can be formed at a second depth to intersect the vias. The method of the present invention allows a dual damascene process to be performed with a single step of photoresist formation.
摘要翻译：提供一种用于在使用具有中间厚度的光致抗蚀剂掩模的镶嵌工艺期间在集成电路电介质中形成中间电平的方法。该方法通过光致抗蚀剂图案中的开口形成到电介质中的第一深度的互连。光致抗蚀剂轮廓在中间厚度的区域被部分地蚀刻掉以露出第二电介质表面积。然后将第二电介质表面积蚀刻到小于第一深度的第二深度。以这种方式，可以将通孔形成为第一深度，并且可以在第二深度处形成线以与通孔相交。本发明的方法允许通过单步形成光致抗蚀剂来进行双镶嵌工艺。

13. 发明授权

US5431958A Metalorganic chemical vapor deposition of ferroelectric thin films 失效
标题翻译：铁电薄膜的金属有机化学气相沉积
公开(公告)号：US5431958A
公开(公告)日：1995-07-11
申请号：US999738
申请日：1992-12-31
申请人： Seshu B. Desu , Chien-Hsiung Peng
发明人： Seshu B. Desu , Chien-Hsiung Peng
IPC分类号： C23C16/40
CPC分类号： C23C16/409
摘要： A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire disks, Pt/Ti/SiO.sub.2 /Si wafers, and RuO.sub.x /SiO.sub.2 /Si wafers by both hot-wall and cold-wall CVD reactors at deposition temperature as low as 550.degree. C. and a reduced pressure 6 torr. The source materials include metalorganic precursors and oxidizing agent. The metalorganic precursors can be metal alkoxides, metal acetylacetonates, or metal .beta.-diketonates. Preferably, the precursors are lead tetramethylheptadione for Pb component, zirconium tetramethylheptadione for Zr component, and titanium ethoxide for Ti component and the oxidizing agent is oxygen. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. The Pb(Zr.sub.0.82 Ti.sub.0.18)O.sub.3 film produced by the present invention shows a spontaneous polarization of 23.3 .mu.C/cm.sup.2, a remanent polarization of 12.3 .mu.C/cm.sup.2, and coercive field of 64.5 kV/cm.
摘要翻译：公开了通过金属有机化学气相沉积生产高质量掺杂和未掺杂的锆钛酸铅（PZT）薄膜的方法。具有钙钛矿结构的PZT薄膜通过热壁和冷壁CVD反应器在低至550℃的沉积温度下沉积在蓝宝石盘，Pt / Ti / SiO 2 / Si晶片和RuO x / SiO 2 / Si晶片上并减压6乇。源材料包括金属有机前体和氧化剂。金属有机前体可以是金属醇盐，金属乙酰丙酮化物或金属β-二酮化物。优选地，前体是Pb组分的铅四甲基庚二酮，Zr组分的四甲基庚二酸锆和Ti组分的乙醇钛，氧化剂是氧。可以通过改变载体气体的各个前体温度和/或流速来容易地控制膜的化学计量。本发明生产的Pb（Zr0.82Ti0.18）O3膜的自发极化为23.3μC/ cm2，剩余极化为12.3μC/ cm 2，矫顽磁场为64.5kV / cm。

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