专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20020093443A1 D/A converter circuit and semiconductor device 有权
标题翻译： D / A转换器电路和半导体器件
公开(公告)号：US20020093443A1
公开(公告)日：2002-07-18
申请号：US09990251
申请日：2001-11-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yukio Tanaka , Munehiro Azami
IPC分类号： H03M001/66
CPC分类号： H03M1/68 , H03M1/765 , H03M1/804
摘要： A D/A converter circuit capable of handling a high bit number digital signal, having good linearity, and having a small occupied surface area is provided. The D/A converter circuit has nnullmnull1 capacitors (where m is a natural number, and smaller than n), and the supply and discharge of electric charge to one of the capacitors from among the nnullmnull1 capacitors are controlled by the lower m bits of a digital video signal. The supply and discharge of electric charge to the remaining nnullm capacitors, from among the nnullmnull1 capacitors, are controlled by the upper nnullm bits, from among the n bits, of the digital video signal.
摘要翻译：提供能够处理具有良好线性度并具有小占用表面积的高位数数字信号的D / A转换器电路。 D / A转换器电路具有n-m + 1个电容器（其中m是自然数，小于n），并且从n-m + 1个电容器到电容器之一的电荷的供给和放电是由数字视频信号的较低m位控制。从n-m + 1个电容器中的剩余n-m个电容器的电荷的供给和放电由数字视频信号的n位中的上n-m位控制。

12. 发明申请

US20020071072A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20020071072A1
公开(公告)日：2002-06-13
申请号：US09921219
申请日：2001-08-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hisashi Ohtani , Yukio Tanaka , Hiroshi Shibata , Akira Ishikawa
IPC分类号： G02F001/1333
CPC分类号： G02F1/136209 , G02F1/136213
摘要： In a pixel structure of an active matrix display device, a high aperture ratio and a sufficient storage capacitor are secured. A light shielding film provided under an active layer of a pixel TFT and the pixel TFT, the active layer of the pixel TFT, and a thinned gate insulating film are used to form a gate wiring and a capacitor.
摘要翻译：在有源矩阵显示装置的像素结构中，确保高开口率和足够的存储电容器。使用设置在像素TFT的有源层和像素TFT，像素TFT的有源层和薄型栅极绝缘膜之下的遮光膜来形成栅极布线和电容器。

13. 发明申请

US20010052898A1 Semiconductor display device and method of driving the same 有权
标题翻译：半导体显示装置及其驱动方法
公开(公告)号：US20010052898A1
公开(公告)日：2001-12-20
申请号：US09772725
申请日：2001-01-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Mitsuaki Osame , Yukio Tanaka
IPC分类号： G09G005/00
CPC分类号： G09G3/3688 , G09G3/3655 , G09G2320/0214
摘要： In executing the opposing common inverse drive in an active matrix-type semiconductor display device, a gate bias is suppressed to be comparable with that of the conventional inverse drive to avoid a range in which the off current jumps up and, hence, to suppress the leakage of the stored electric charge, thereby to maintain an ON/OFF margin of the pixel TFTs. The gate bias applied to the pixel TFT is maintained to be near the customarily employed voltage to maintain a gate breakdown voltage, and the electric power is consumed in a decreased amount by the drive circuit as a whole, thereby to provide a novel drive circuit. In the semiconductor display device, a tristate buffer is used for a gate signal line drive circuit, and different buffer potentials are applied depending upon a frame in which the opposing common potential assumes a positive sign and a frame in which the opposing common potential assumes a negative sign. thereby to maintain an ON/OFF margin of the pixel TFTs. The voltage amplitude is decreased during the opposing common inverse drive.
摘要翻译：在有源矩阵型半导体显示装置中执行相对的公共反向驱动时，抑制栅极偏压与传统的反向驱动相当，以避免关断电流跳跃的范围，从而抑制存储电荷的泄漏，从而保持像素TFT的ON / OFF边缘。施加到像素TFT的栅极偏置保持接近通常采用的电压以保持栅极击穿电压，并且通过驱动电路作为整体以降低的量消耗电力，从而提供新颖的驱动电路。在半导体显示装置中，三态缓冲器用于栅极信号线驱动电路，并且根据相对的公共电位呈现正号的帧和相对的共同电位呈现为的帧，施加不同的缓冲电位负号。从而保持像素TFT的ON / OFF边缘。在相反的公共反向驱动期间，电压幅度减小。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式