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    • 15. 发明授权
    • Group III nitride compound semiconductor laser
    • III族氮化物化合物半导体激光器
    • US06680957B1
    • 2004-01-20
    • US09515493
    • 2000-02-29
    • Masayoshi KoikeShiro YamasakiYuta TezenSeiji NagaiAkira KojimaToshio Hiramatsu
    • Masayoshi KoikeShiro YamasakiYuta TezenSeiji NagaiAkira KojimaToshio Hiramatsu
    • H01S500
    • B82Y20/00H01S5/22H01S5/34333
    • A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10.
    • 半导体激光器101包括蓝宝石衬底1,AlN缓冲层2,掺杂Si的GaN n层3,掺杂Si的Al 0.1 Ga 0.9 N n包层4,掺杂Si的GaN n引导层5, 具有多个量子阱(MQW)结构的有源层6,其中厚度约为35的GaN阻挡层62和约35厚度的Ga0.95In0.05N阱层61交替层叠,掺杂Mg的GaN p引导层 如图7所示,依次形成Mg掺杂的Al 0.1 Ga 0.9 N p包覆层8和Mg掺杂的GaN p接触层9。 与脊状谐振器部件A接触的脊状空穴注入部分B形成为具有与Ni电极10的宽度w相同的宽度。从Ni电极10传输的孔以高电流密度注入到有源层6中, 可以降低激光振荡的电流阈值。 也可以通过将p导向层7形成为具有与Ni电极10的宽度w相同的宽度来更有效地提高电流阈值。
    • 18. 发明授权
    • Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
    • 制备III族氮化物化合物半导体衬底和半导体器件的方法
    • US06855620B2
    • 2005-02-15
    • US10258546
    • 2001-03-02
    • Masayoshi KoikeSeiji NagaiYuta Tezen
    • Masayoshi KoikeSeiji NagaiYuta Tezen
    • C30B29/38H01L21/20H01L21/205H01L33/06H01L33/32H01S5/323H01S5/343H01L21/36H01L31/0336H01L31/3028
    • H01L21/0254H01L21/0237H01L21/0242H01L21/02458H01L21/0262H01L21/02631H01L21/02639H01L21/0265H01L33/007H01L33/0075
    • A GaN layer 31 is subjected to etching, so as to form an island-like structure having, for example, a dot, stripe, or grid shape, thereby providing a trench/mesa structure including mesas and trenches whose bottoms sink into the surface of a substrate base 1. Subsequently, a GaN layer 32 is lateral-epitaxially grown with the top surfaces of the mesas and sidewalls of the trenches serving as nuclei, to thereby fill upper portions of the trenches (depressions of the substrate base 1), and then epitaxial growth is effected in the vertical direction. In this case, propagation of threading dislocations contained in the GaN layer 31 can be prevented in the upper portion of the GaN layer 32 that is formed through lateral epitaxial growth. Thereafter, the remaining GaN layer 31 is removed through etching, together with the GaN layer 32 formed atop the GaN layer 31, and subsequently, a GaN layer 33 is lateral-epitaxially grown with the top surfaces of mesas and sidewalls of trenches serving as nuclei, the mesas and trenches being formed of the remaining GaN layer 32, thereby producing a GaN substrate 30 in which threading dislocations are considerably suppressed. When the area of a portion of the GaN layer 31 at which the GaN substrate 30 is in contact with the substrate base 1 is reduced, separation of the GaN substrate 30 from the substrate base 1 is readily attained.
    • 对GaN层31进行蚀刻,以形成例如点状,条状或格子状的岛状结构,从而提供包括台面和沟槽的沟槽/台面结构,其底部沉入到 接下来,GaN层32被横向外延生长,台阶的顶表面和沟槽的侧壁用作核,从而填充沟槽的上部(衬底1的凹陷),以及 则在垂直方向进行外延生长。 在这种情况下,在通过横向外延生长形成的GaN层32的上部可以防止包含在GaN层31中的穿透位错的传播。 此后,残留的GaN层31与形成在GaN层31顶上的GaN层32一起通过蚀刻去除,随后,GaN层33被横向外延生长,作为用作核的沟槽的台面和侧壁的顶面 ,台面和沟槽由剩余的GaN层32形成,从而产生显着地抑制穿透位错的GaN衬底30。 当GaN衬底30与衬底基底1接触的部分GaN层31的面积减小时,容易获得GaN衬底30与衬底基底1的分离。